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Phase selective growth and properties of rhombohedral and cubic indium oxide

Applied physics letters, 2006-07, Vol.89 (1), p.011904-011904-3

2006

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In situ spectroscopic ellipsometry of hydrogen-argon plasma cleaned silicon surfaces

Thin solid films, 2004-05, Vol.455, p.695-699

2004

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Initial stages in the carbonization of (111)Si by solid-source molecular beam epitaxy

Applied physics letters, 1998-12, Vol.73 (24), p.3542-3544

1998

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Investigation of the nucleation and growth of SiC nanostructures on Si

Thin solid films, 2000-12, Vol.380 (1), p.92-96

2000

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NOx sensing properties of In2O3 nanoparticles prepared by metal organic chemical vapor deposition

Sensors and actuators. B, Chemical, 2008-03, Vol.130 (2), p.589-593

2008

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Integration of In2O3 nanoparticle based ozone sensors with GaInN∕GaN light emitting diodes

Applied physics letters, 2007-09, Vol.91 (10)

2007

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Influence of the heating ramp on the heteroepitaxial growth of SiC on Si

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-07, Vol.61, p.553-558

1999

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NOx sensing properties of In2O3 thin films grown by MOCVD

Sensors and actuators. B, Chemical, 2008-01, Vol.129 (1), p.467-472

2008

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Photoreduction and oxidation behavior of In2O3 nanoparticles by metal organic chemical vapor deposition

Journal of applied physics, 2007-08, Vol.102 (4)

2007

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Ge-modified Si(100) substrates for the growth of 3C-SiC(100)

Applied physics letters, 2006-05, Vol.88 (21)

2006

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SiC-based FET for detection of NOx and O2 using InSnOx as a gate material

Sensors and actuators. B, Chemical, 2007-03, Vol.122 (1), p.182-186

2007

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NO sub(x) sensing properties of In sub(2)O sub(3) nanoparticles prepared by metal organic chemical vapor deposition

Sensors and actuators. B, Chemical, 2008-03, Vol.130 (2), p.589-593

2008

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Temperature Facilitated ECR-Etching for Isotropic SiC Structuring

Materials science forum, 2010-01, Vol.645-648, p.849-852

2010

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NO x sensing properties of In 2O 3 nanoparticles prepared by metal organic chemical vapor deposition

Sensors and actuators. B, Chemical, 2008, Vol.130 (2), p.589-593

2008

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Nanostructuring Techniques for 3C-SiC(100) NEMS Structures

Materials science forum, 2010-01, Vol.645-648, p.841-844

2010

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NO sub(x) sensing properties of In sub(2)O sub(3) thin films grown by MOCVD

Sensors and actuators. B, Chemical, 2008-01, Vol.129 (1), p.467-472

2008

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NO x sensing properties of In 2O 3 thin films grown by MOCVD

Sensors and actuators. B, Chemical, 2008, Vol.129 (1), p.467-472

2008

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Reactively sputtered InxVyOz films for detection of NOx, D2, and O2

Sensors and actuators. B, Chemical, 2007-05, Vol.123 (2), p.779-783

2007

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SiC-based FET for detection of NO sub(x) and O sub(2) using InSnO sub(x) as a gate material

Sensors and actuators. B, Chemical, 2007-03, Vol.122 (1), p.182-186

2007

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SiC-based FET for detection of NO x and O 2 using InSnO x as a gate material

Sensors and actuators. B, Chemical, 2007, Vol.122 (1), p.182-186

2007

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Isotropic Etching of SiC

Materials science forum, 2009, Vol.600-603, p.651-654

2009

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Reactively sputtered In sub(x)V sub(y)O sub(z) films for detection of NO sub(x), D sub(2), and O sub(2)

Sensors and actuators. B, Chemical, 2007-05, Vol.123 (2), p.779-783

2007

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Reactively sputtered In x V y O z films for detection of NO x , D 2, and O 2

Sensors and actuators. B, Chemical, 2007, Vol.123 (2), p.779-783

2007

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Atomic layer epitaxy of (Si(1-x)C(1-y))Ge(x+y) layers on 4H-SiC

Materials science forum, 2006-01, Vol.527-529, p.1559-1562

2006

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Atomic Layer Epitaxy of (Si1-xC1-y)Gex+y Layers on 4H-SiC

Materials science forum, 2006, Vol.527-529, p.1559-1562

2006

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Phase selective growth and properties of rhombohedral and cubic indium oxide

In situ spectroscopic ellipsometry of hydrogen-argon plasma cleaned silicon surfaces

Initial stages in the carbonization of (111)Si by solid-source molecular beam epitaxy

Investigation of the nucleation and growth of SiC nanostructures on Si

NOx sensing properties of In2O3 nanoparticles prepared by metal organic chemical vapor deposition

Integration of In2O3 nanoparticle based ozone sensors with GaInN∕GaN light emitting diodes

Influence of the heating ramp on the heteroepitaxial growth of SiC on Si

NOx sensing properties of In2O3 thin films grown by MOCVD

Photoreduction and oxidation behavior of In2O3 nanoparticles by metal organic chemical vapor deposition

Ge-modified Si(100) substrates for the growth of 3C-SiC(100)

SiC-based FET for detection of NOx and O2 using InSnOx as a gate material

NO sub(x) sensing properties of In sub(2)O sub(3) nanoparticles prepared by metal organic chemical vapor deposition

Temperature Facilitated ECR-Etching for Isotropic SiC Structuring

NO x sensing properties of In 2O 3 nanoparticles prepared by metal organic chemical vapor deposition

Nanostructuring Techniques for 3C-SiC(100) NEMS Structures

NO sub(x) sensing properties of In sub(2)O sub(3) thin films grown by MOCVD

NO x sensing properties of In 2O 3 thin films grown by MOCVD

Reactively sputtered InxVyOz films for detection of NOx, D2, and O2

SiC-based FET for detection of NO sub(x) and O sub(2) using InSnO sub(x) as a gate material

SiC-based FET for detection of NO x and O 2 using InSnO x as a gate material

Isotropic Etching of SiC

Reactively sputtered In sub(x)V sub(y)O sub(z) films for detection of NO sub(x), D sub(2), and O sub(2)

Reactively sputtered In x V y O z films for detection of NO x , D 2, and O 2

Atomic layer epitaxy of (Si(1-x)C(1-y))Ge(x+y) layers on 4H-SiC

Atomic Layer Epitaxy of (Si1-xC1-y)Gex+y Layers on 4H-SiC

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