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Large-area single-crystal AB-bilayer and ABA-trilayer graphene grown on a Cu/Ni(111) foil

Nature nanotechnology, 2020-04, Vol.15 (4), p.289-295

2020

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Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics

ACS nano, 2014-09, Vol.8 (9), p.9332-9340

2014

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Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide

Nature communications, 2015-03, Vol.6 (1), p.6564-6564, Article 6564

2015

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P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor

Advanced materials (Weinheim), 2016-03, Vol.28 (12), p.2345-2351

2016

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Carrier‐Type Modulation and Mobility Improvement of Thin MoTe2

Advanced materials (Weinheim), 2017-10, Vol.29 (39), p.n/a

2017

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Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p–n Junction

ACS nano, 2017-09, Vol.11 (9), p.9143-9150

2017

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High performance WSe2 p-MOSFET with intrinsic n-channel based on back-to-back p–n junctions

Applied physics letters, 2021-06, Vol.118 (23)

2021

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Self-Terminated Surface Monolayer Oxidation Induced Robust Degenerate Doping in MoTe2 for Low Contact Resistance

ACS applied materials & interfaces, 2020-06, Vol.12 (23), p.26586-26592

2020

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Highly Oriented Monolayer Graphene Grown on a Cu/Ni(111) Alloy Foil

ACS nano, 2018-06, Vol.12 (6), p.6117-6127

2018

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Charge Density Depinning in Defective MoTe2 Transistor by Oxygen Intercalation

Advanced functional materials, 2020-12, Vol.30 (50), p.n/a

2020

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Metal-Semiconductor Barrier Modulation for High Photoresponse in Transition Metal Dichalcogenide Field Effect Transistors

Scientific reports, 2014-02, Vol.4 (1), p.4041-4041, Article 4041

2014

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Homogeneous molybdenum disulfide tunnel diode formed via chemical doping

Applied physics letters, 2018-04, Vol.112 (18)

2018

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Ambipolar MoS2 Field‐Effect Transistor by Spatially Controlled Chemical Doping

Physica status solidi. PSS-RRL. Rapid research letters, 2019-09, Vol.13 (9), p.n/a

2019

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Controlled Folding of Single Crystal Graphene

Nano letters, 2017-03, Vol.17 (3), p.1467-1473

2017

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High Electric Field Carrier Transport and Power Dissipation in Multilayer Black Phosphorus Field Effect Transistor with Dielectric Engineering

Advanced functional materials, 2017-01, Vol.27 (4), p.np-n/a

2017

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Charge Density Depinning in Defective MoTe 2 Transistor by Oxygen Intercalation

Advanced functional materials, 2020-12, Vol.30 (50)

2020

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Self-screened high performance multi-layer MoS₂ transistor formed by using a bottom graphene electrode

Nanoscale, 2015-12, Vol.7 (45), p.19273-19281

2015

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Self-Terminated Surface Monolayer Oxidation Induced Robust Degenerate Doping in MoTe 2 for Low Contact Resistance

ACS applied materials & interfaces, 2020-06, Vol.12 (23), p.26586-26592

2020

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Effects of plasma treatment on surface properties of ultrathin layered MoS2

2d materials, 2016-07, Vol.3 (3)

2016

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Ambipolar MoS 2 Field‐Effect Transistor by Spatially Controlled Chemical Doping

Physica status solidi. PSS-RRL. Rapid research letters, 2019-09, Vol.13 (9)

2019

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P-Type Polar Transition of Chemically Doped Multilayer MoS sub(2) Transistor

Advanced materials (Weinheim), 2016-03, Vol.28 (12), p.2345-2351

2016

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P‐Type Polar Transition of Chemically Doped Multilayer MoS 2 Transistor

Advanced materials (Weinheim), 2016-03, Vol.28 (12), p.2345-2351

2016

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Carrier-Type Modulation and Mobility Improvement of Thin MoTe 2

Advanced materials (Weinheim), 2017-10, Vol.29 (39)

2017

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Self-screened high performance multi-layer MoS2 transistor formed by using a bottom graphene electrodeElectronic supplementary information (ESI) available. See DOI: 10.1039/c5nr06076a

2015-11

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Self-screened high performance multi-layer MoS sub(2) transistor formed by using a bottom graphene electrode

Nanoscale, 2015-11, Vol.7 (45), p.19273-19281

2015

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Large-area single-crystal AB-bilayer and ABA-trilayer graphene grown on a Cu/Ni(111) foil

Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics

Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide

P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor

Carrier‐Type Modulation and Mobility Improvement of Thin MoTe2

Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p–n Junction

High performance WSe2 p-MOSFET with intrinsic n-channel based on back-to-back p–n junctions

Self-Terminated Surface Monolayer Oxidation Induced Robust Degenerate Doping in MoTe2 for Low Contact Resistance

Highly Oriented Monolayer Graphene Grown on a Cu/Ni(111) Alloy Foil

Charge Density Depinning in Defective MoTe2 Transistor by Oxygen Intercalation

Metal-Semiconductor Barrier Modulation for High Photoresponse in Transition Metal Dichalcogenide Field Effect Transistors

Homogeneous molybdenum disulfide tunnel diode formed via chemical doping

Ambipolar MoS2 Field‐Effect Transistor by Spatially Controlled Chemical Doping

Controlled Folding of Single Crystal Graphene

High Electric Field Carrier Transport and Power Dissipation in Multilayer Black Phosphorus Field Effect Transistor with Dielectric Engineering

Charge Density Depinning in Defective MoTe 2 Transistor by Oxygen Intercalation

Self-screened high performance multi-layer MoS₂ transistor formed by using a bottom graphene electrode

Self-Terminated Surface Monolayer Oxidation Induced Robust Degenerate Doping in MoTe 2 for Low Contact Resistance

Effects of plasma treatment on surface properties of ultrathin layered MoS2

Ambipolar MoS 2 Field‐Effect Transistor by Spatially Controlled Chemical Doping

P-Type Polar Transition of Chemically Doped Multilayer MoS sub(2) Transistor

P‐Type Polar Transition of Chemically Doped Multilayer MoS 2 Transistor

Carrier-Type Modulation and Mobility Improvement of Thin MoTe 2

Self-screened high performance multi-layer MoS2 transistor formed by using a bottom graphene electrodeElectronic supplementary information (ESI) available. See DOI: 10.1039/c5nr06076a

Self-screened high performance multi-layer MoS sub(2) transistor formed by using a bottom graphene electrode

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