UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Hall effect measurements on InAs nanowires

Applied physics letters, 2012-10, Vol.101 (15)

2012

Volltextzugriff (PDF)

Conditioning nano-LEDs in arrays by laser-micro-annealing: The key to their performance improvement

Applied physics letters, 2021-01, Vol.118 (4)

2021

Volltextzugriff (PDF)

Integrated high pressure microhydraulic actuation and control for surgical instruments

Biomedical microdevices, 2012-08, Vol.14 (4), p.699-708

2012

Volltextzugriff (PDF)

n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility

IEEE electron device letters, 2010-10, Vol.31 (10), p.1083-1085

2010

Volltextzugriff (PDF)

Broadband transmission masks, gratings and filters for extreme ultraviolet and soft X-ray lithography

Thin solid films, 2012-05, Vol.520 (15), p.5080-5085

2012

Volltextzugriff (PDF)

Optimized marker definition for high overlay accuracy e-beam lithography

Microelectronic engineering, 2012-09, Vol.97, p.68-71

2012

Volltextzugriff (PDF)

Photo-induced conductance fluctuations in mesoscopic Ge/Si systems with quantum dots

AIP Conference Proceedings, 2014, Vol.1610 (1), p.64

2014

Volltextzugriff (PDF)

Turning the world vertical: MOSFETs with current flow perpendicular to the wafer surface

Applied physics. A, Materials science & processing, 2007-06, Vol.87 (3), p.531-537

Moers, J.

2007

Volltextzugriff (PDF)

Etching titanium nitride gate stacked on high-κ dielectric

Microelectronic engineering, 2011-08, Vol.88 (8), p.2541-2543

2011

Volltextzugriff (PDF)

Influence of the epitaxial growth and device processing on the overlay accuracy during processing of the d-DotFET

Thin solid films, 2010-02, Vol.518 (9), p.2565-2568

2010

Volltextzugriff (PDF)

Integration of MOSFETs with SiGe dots as stressor material

Solid-state electronics, 2011-06, Vol.60 (1), p.75-83

2011

Volltextzugriff (PDF)

Growth of Ge dots on templated Si substrates with diffusion-altered holes

Europhysics letters, 2009-03, Vol.85 (5), p.58002-58002(4)

2009

Volltextzugriff (PDF)

Gate-controlled quantum collimation in nanocolumn resonant tunnelling transistors

Nanotechnology, 2009-11, Vol.20 (46), p.465402-465402

2009

Volltextzugriff (PDF)

Fabrication and control of miniature McKibben actuators

Sensors and actuators. A. Physical., 2011-03, Vol.166 (1), p.111-116

2011

Volltextzugriff (PDF)

Turning the world vertical : MOSFETs with current flow perpendicular to the wafer surface: From surface science to nanoscale devices

Applied physics. A, Materials science & processing, 2007, Vol.87 (3), p.531-537

MOERS, J

2007

Volltextzugriff (PDF)

Patterning of 25-nm-wide silicon webs with an aspect ratio of 13

Microelectronic engineering, 2003-06, Vol.67, p.376-380

2003

Volltextzugriff (PDF)

Photo-induced conductance fluctuations in mesoscopic Ge/Si systems with quantum dots

Journal of physics. Conference series, 2010-09, Vol.245 (1), p.012034

2010

Volltextzugriff (PDF)

Fabrication of silicon webs in the decananometre range

Applied physics. A, Materials science & processing, 2004-03, Vol.78 (5), p.627-628

2004

Volltextzugriff (PDF)

Advanced CMOS process for floating gate field-effect transistors in bioelectronic applications

Sensors and actuators. B, Chemical, 2007-12, Vol.128 (1), p.208-217

2007

Volltextzugriff (PDF)

Giant mesoscopic photoconductance fluctuations in Ge/Si quantum dot system

Applied physics letters, 2011-04, Vol.98 (14)

2011

Volltextzugriff (PDF)

N-Channel field-effect transistors with floating gates for extracellular recordings

Biosensors & bioelectronics, 2006-01, Vol.21 (7), p.1037-1044

2006

Volltextzugriff (PDF)

Top contacts for vertical double-gate MOSFETs

Microelectronic engineering, 2002-10, Vol.64 (1), p.465-471

2002

Volltextzugriff (PDF)

Primary HIV drug resistance and efficacy of first-line antiretroviral therapy guided by resistance testing

Journal of acquired immune deficiency syndromes (1999), 2006-04, Vol.41 (5), p.573-581

2006

Volltextzugriff (PDF)

Wet low-temperature gate oxidation for nanoscale vertical field-effect transistors

Physica. E, Low-dimensional systems & nanostructures, 2003-07, Vol.19 (1), p.18-22

2003

Volltextzugriff (PDF)

Selectively grown vertical Si MOS transistor with reduced overlap capacitances

Thin solid films, 1998-12, Vol.336 (1), p.306-308

1998

Volltextzugriff (PDF)

1 – 25 von 338

Suche als RSS-Feed

Aktive Filter

SpracheEnglisch

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(267)
Mit Volltextzugriff
(263)

Publikationsform

2 weitere anzeigen...

Weniger anzeigen...

Sprache

Deutsch
(6)

Erscheinungsjahr

n.n

Thema

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)
... seit 90 Tagen
(2)

Menü

Weitere Dienste

Einstellungen

Hall effect measurements on InAs nanowires

Conditioning nano-LEDs in arrays by laser-micro-annealing: The key to their performance improvement

Integrated high pressure microhydraulic actuation and control for surgical instruments

n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility

Broadband transmission masks, gratings and filters for extreme ultraviolet and soft X-ray lithography

Optimized marker definition for high overlay accuracy e-beam lithography

Photo-induced conductance fluctuations in mesoscopic Ge/Si systems with quantum dots

Turning the world vertical: MOSFETs with current flow perpendicular to the wafer surface

Etching titanium nitride gate stacked on high-κ dielectric

Influence of the epitaxial growth and device processing on the overlay accuracy during processing of the d-DotFET

Integration of MOSFETs with SiGe dots as stressor material

Growth of Ge dots on templated Si substrates with diffusion-altered holes

Gate-controlled quantum collimation in nanocolumn resonant tunnelling transistors

Fabrication and control of miniature McKibben actuators

Turning the world vertical : MOSFETs with current flow perpendicular to the wafer surface: From surface science to nanoscale devices

Patterning of 25-nm-wide silicon webs with an aspect ratio of 13

Photo-induced conductance fluctuations in mesoscopic Ge/Si systems with quantum dots

Fabrication of silicon webs in the decananometre range

Advanced CMOS process for floating gate field-effect transistors in bioelectronic applications

Giant mesoscopic photoconductance fluctuations in Ge/Si quantum dot system

N-Channel field-effect transistors with floating gates for extracellular recordings

Top contacts for vertical double-gate MOSFETs

Primary HIV drug resistance and efficacy of first-line antiretroviral therapy guided by resistance testing

Wet low-temperature gate oxidation for nanoscale vertical field-effect transistors

Selectively grown vertical Si MOS transistor with reduced overlap capacitances

Aktive Filter

Suchergebnisse filtern