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A global survey of alternative splicing in allopolyploid cotton: landscape, complexity and regulation

The New phytologist, 2018-01, Vol.217 (1), p.163-178

2018

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Asymmetric subgenome selection and cis-regulatory divergence during cotton domestication

Nature genetics, 2017-04, Vol.49 (4), p.579-587

2017

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Long noncoding RNAs and their proposed functions in fibre development of cotton (Gossypium spp.)

The New phytologist, 2015-09, Vol.207 (4), p.1181-1197

2015

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Cotton pan-genome retrieves the lost sequences and genes during domestication and selection

Genome Biology, 2021-04, Vol.22 (1), p.119-26, Article 119

2021

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Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

Applied physics letters, 2015-02, Vol.106 (5)

2015

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Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices

IEEE transactions on electron devices, 2018-01, Vol.65 (1), p.207-214

2018

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Disrupted Genome Methylation in Response to High Temperature Has Distinct Affects on Microspore Abortion and Anther Indehiscence

The Plant cell, 2018-07, Vol.30 (7), p.1387-1403

2018

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The chromosome-scale reference genome of black pepper provides insight into piperine biosynthesis

Nature communications, 2019-10, Vol.10 (1), p.4702-11, Article 4702

2019

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Correlation between border traps and exposed surface properties in gate recessed normally-off Al2O3/GaN MOSFET

Applied physics letters, 2018-06, Vol.112 (23)

2018

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A comprehensive overview of cotton genomics, biotechnology and molecular biological studies

Science China. Life sciences, 2023-10, Vol.66 (10), p.2214-2256

2023

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1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer

Nanoscale research letters, 2022-01, Vol.17 (1), p.14-14, Article 14

2022

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High-Performance Normally-Off Al2O3/GaN MOSFET Using a Wet Etching-Based Gate Recess Technique

IEEE electron device letters, 2013-11, Vol.34 (11), p.1370-1372

2013

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A comparative genome analysis of PME and PMEI families reveals the evolution of pectin metabolism in plant cell walls

PloS one, 2013-08, Vol.8 (8), p.e72082-e72082

2013

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Enhanced robustness against hot-electron-induced degradation in active-passivation p-GaN gate HEMT

Applied physics letters, 2024-03, Vol.124 (10)

2024

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Pangenome analysis reveals transposon-driven genome evolution in cotton

BMC biology, 2024-04, Vol.22 (1), p.92-92, Article 92

2024

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Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate Pumping

IEEE electron device letters, 2011-04, Vol.32 (4), p.482-484

2011

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Diversification and Spatial Differentiation of Villages’ Functional Types in the New Period of China: Results from Hierarchical Urban-Rural Spatial Relations and Townships Size

Land (Basel), 2022-02, Vol.11 (2), p.171

2022

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Wetland loss and degradation in the Yellow River Delta, Shandong Province of China

Environmental earth sciences, 2012-09, Vol.67 (1), p.185-188

2012

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Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer

IEEE electron device letters, 2014-07, Vol.35 (7), p.723-725

2014

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Dynamic 3D genome architecture of cotton fiber reveals subgenome-coordinated chromatin topology for 4-staged single-cell differentiation

Genome Biology, 2022-02, Vol.23 (1), p.45-25, Article 45

2022

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Phenomics‐based GWAS analysis reveals the genetic architecture for drought resistance in cotton

Plant biotechnology journal, 2020-12, Vol.18 (12), p.2533-2544

2020

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Identification of rural courtyards’ utilization status using deep learning and machine learning methods on unmanned aerial vehicle images in north China

Building simulation, 2024-05, Vol.17 (5), p.799-818

2024

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Evolution and subfunctionalization of CIPK6 homologous genes in regulating cotton drought resistance

Nature communications, 2024-07, Vol.15 (1), p.5733-17, Article 5733

2024

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Vertical GaN Schottky barrier diodes on Ge-doped free-standing GaN substrates

Journal of alloys and compounds, 2019-04, Vol.780, p.476-481

2019

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Schottky-MOS Hybrid Anode AlGaN/GaN Lateral Field-Effect Rectifier With Low Onset Voltage and Improved Breakdown Voltage

IEEE electron device letters, 2017-10, Vol.38 (10), p.1425-1428

2017

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A global survey of alternative splicing in allopolyploid cotton: landscape, complexity and regulation

Asymmetric subgenome selection and cis-regulatory divergence during cotton domestication

Long noncoding RNAs and their proposed functions in fibre development of cotton (Gossypium spp.)

Cotton pan-genome retrieves the lost sequences and genes during domestication and selection

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices

Disrupted Genome Methylation in Response to High Temperature Has Distinct Affects on Microspore Abortion and Anther Indehiscence

The chromosome-scale reference genome of black pepper provides insight into piperine biosynthesis

Correlation between border traps and exposed surface properties in gate recessed normally-off Al2O3/GaN MOSFET

A comprehensive overview of cotton genomics, biotechnology and molecular biological studies

1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer

High-Performance Normally-Off Al2O3/GaN MOSFET Using a Wet Etching-Based Gate Recess Technique

A comparative genome analysis of PME and PMEI families reveals the evolution of pectin metabolism in plant cell walls

Enhanced robustness against hot-electron-induced degradation in active-passivation p-GaN gate HEMT

Pangenome analysis reveals transposon-driven genome evolution in cotton

Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate Pumping

Diversification and Spatial Differentiation of Villages’ Functional Types in the New Period of China: Results from Hierarchical Urban-Rural Spatial Relations and Townships Size

Wetland loss and degradation in the Yellow River Delta, Shandong Province of China

Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer

Dynamic 3D genome architecture of cotton fiber reveals subgenome-coordinated chromatin topology for 4-staged single-cell differentiation

Phenomics‐based GWAS analysis reveals the genetic architecture for drought resistance in cotton

Identification of rural courtyards’ utilization status using deep learning and machine learning methods on unmanned aerial vehicle images in north China

Evolution and subfunctionalization of CIPK6 homologous genes in regulating cotton drought resistance

Vertical GaN Schottky barrier diodes on Ge-doped free-standing GaN substrates

Schottky-MOS Hybrid Anode AlGaN/GaN Lateral Field-Effect Rectifier With Low Onset Voltage and Improved Breakdown Voltage

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