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Oxidation of silicon–germanium alloys. I. An experimental study

Journal of applied physics, 1997-12, Vol.82 (11), p.5773-5778

1997

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Oxidation of silicon–germanium alloys. II. A mathematical model

Journal of applied physics, 1997-12, Vol.82 (11), p.5779-5787

1997

Volltextzugriff (PDF)

Effect of growth temperature on the properties of evaporated tantalum pentoxide thin films on silicon deposited using oxygen radicals

Journal of applied physics, 1998-08, Vol.84 (3), p.1632-1642

1998

Volltextzugriff (PDF)

A charge sheet model for MOSFETs with an abrupt retrograde channel: Part I. Drain current and body charge

Solid-state electronics, 2002-12, Vol.46 (12), p.2209-2216

2002

Volltextzugriff (PDF)

A charge sheet model for MOSFETs with an abrupt retrograde channel: Part II. Charges and intrinsic capacitances

Solid-state electronics, 2002-12, Vol.46 (12), p.2217-2225

2002

Volltextzugriff (PDF)

Considerations of Pad Compensation for On-Wafer High Frequency Characterization of MOSFETs

Physica Scripta, 2002-01, Vol.2002 (1), p.70

2002

Volltextzugriff (PDF)

Polycrystalline p+-SixGe1-x as a single gate in CMOS technology

Physica scripta, 1999-01, Vol.1999 (1), p.225

1999

Volltextzugriff (PDF)

Tantalum oxide films on silicon grown by tantalum evaporation in atomic oxygen

Thin solid films, 1996-08, Vol.281, p.415-418

1996

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Threshold voltage control for PMOSFETs using an undoped epitaxial Si channel and a p+-SixGe1−x gate

Solid-state electronics, 2000-11, Vol.44 (11), p.2085-2088

2000

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Influence of Interface Roughness on Electrical Properties of pMOSFETs with a Si/Si1- xGex Channel

Physica Scripta, 2002-01, Vol.2002 (1), p.22

2002

Volltextzugriff (PDF)

Wet And Dry Oxidation of Polycrystalline SixGe1-x Films

MRS proceedings, 1998, Vol.533

1998

Volltextzugriff (PDF)

Nonionic cleavable ortho ester surfactants

Journal of surfactants and detergents, 2000-07, Vol.3 (3), p.369-379

2000

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Work function of boron-doped polycrystalline Si/sub x/Ge/sub 1-x/ films

IEEE electron device letters, 1997-09, Vol.18 (9), p.456-458

1997

Volltextzugriff (PDF)

Enhanced intrinsic gain (gm/gd) of PMOSFETs with a Si0.7Ge0.3 channel

2002

Volltextzugriff (PDF)

Synthesis and characterization of cleavable surfactants derived from poly(ethylene glycol) monomethyl ether

Journal of the American Oil Chemists' Society, 1996-07, Vol.73 (7), p.841-845

1996

Volltextzugriff (PDF)

Expression of Matrix Metalloproteinases and Their Inhibitors in Human Trabecular Meshwork Cells

Investigative ophthalmology & visual science, 2003-08, Vol.44 (8), p.3485-3493

2003

Volltextzugriff (PDF)

Notched sub-100 nm gate MOSFETs for analog applications

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443), 2001, Vol.1, p.539-542 vol.1

2001

Volltextzugriff (PDF)

Cleavable surfactants

Journal of surfactants and detergents, 2000-01, Vol.3 (1), p.81-91

2000

Volltextzugriff (PDF)

Aqueous Outflow-Enhancing Effect of tert-Butylhydroquinone: Involvement of AP-1 Activation and MMP-3 Expression

Investigative ophthalmology & visual science, 2003-08, Vol.44 (8), p.3502-3510

2003

Volltextzugriff (PDF)

A charge sheet model for MOSFETs with an abrupt retrograde channel

Solid-state electronics, 2002-12, Vol.46 (12), p.2217-2225

2002

Volltextzugriff (PDF)

A charge sheet model for MOSFETs with an abrupt retrograde channel

Solid-state electronics, 2002-12, Vol.46 (12), p.2209-2216

2002

Volltextzugriff (PDF)

Ortho ester‐based cleavable cationic surfactants

Journal of surfactants and detergents, 2002-07, Vol.5 (3), p.217-227

Hellberg, Per‐Erik

2002

Volltextzugriff (PDF)

Threshold voltage control for PMOSFETs using an undoped epitaxial Si channel and a p +-Si xGe 1− x gate

Solid-state electronics, 2000, Vol.44 (11), p.2085-2088

2000

Volltextzugriff (PDF)

Work function of boron-doped polycrystallineSi(x)Ge(1-x) films

IEEE electron device letters, 1997-09, Vol.18 (9), p.456-458

1997

Volltextzugriff (PDF)

Work function of boron-doped polycrystalline Si sub(x)Ge sub(1-x) films

IEEE electron device letters, 1997-01, Vol.18 (9), p.456-458

1997

Volltextzugriff (PDF)

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Oxidation of silicon–germanium alloys. I. An experimental study

Oxidation of silicon–germanium alloys. II. A mathematical model

Effect of growth temperature on the properties of evaporated tantalum pentoxide thin films on silicon deposited using oxygen radicals

A charge sheet model for MOSFETs with an abrupt retrograde channel: Part I. Drain current and body charge

A charge sheet model for MOSFETs with an abrupt retrograde channel: Part II. Charges and intrinsic capacitances

Considerations of Pad Compensation for On-Wafer High Frequency Characterization of MOSFETs

Polycrystalline p+-SixGe1-x as a single gate in CMOS technology

Tantalum oxide films on silicon grown by tantalum evaporation in atomic oxygen

Threshold voltage control for PMOSFETs using an undoped epitaxial Si channel and a p+-SixGe1−x gate

Influence of Interface Roughness on Electrical Properties of pMOSFETs with a Si/Si1- xGex Channel

Wet And Dry Oxidation of Polycrystalline SixGe1-x Films

Nonionic cleavable ortho ester surfactants

Work function of boron-doped polycrystalline Si/sub x/Ge/sub 1-x/ films

Enhanced intrinsic gain (gm/gd) of PMOSFETs with a Si0.7Ge0.3 channel

Synthesis and characterization of cleavable surfactants derived from poly(ethylene glycol) monomethyl ether

Expression of Matrix Metalloproteinases and Their Inhibitors in Human Trabecular Meshwork Cells

Notched sub-100 nm gate MOSFETs for analog applications

Cleavable surfactants

Aqueous Outflow-Enhancing Effect of tert-Butylhydroquinone: Involvement of AP-1 Activation and MMP-3 Expression

A charge sheet model for MOSFETs with an abrupt retrograde channel

A charge sheet model for MOSFETs with an abrupt retrograde channel

Ortho ester‐based cleavable cationic surfactants

Threshold voltage control for PMOSFETs using an undoped epitaxial Si channel and a p +-Si xGe 1− x gate

Work function of boron-doped polycrystallineSi(x)Ge(1-x) films

Work function of boron-doped polycrystalline Si sub(x)Ge sub(1-x) films

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