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High temperature RF performances of epitaxial bilayer graphene field-effect transistors on SiC substrate

Carbon (New York), 2020-08, Vol.164, p.435-441

2020

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4-phenylbutyrate exerts stage-specific effects on cardiac differentiation via HDAC inhibition

PloS one, 2021-04, Vol.16 (4), p.e0250267-e0250267

2021

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Hydrogen-terminated diamond MOSFETs on (0 0 1) single crystal diamond with state of the art high RF power density

Functional diamond (Online), 2022-12, Vol.2 (1), p.64-70

2022

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Preparation and electrical transport properties of quasi free standing bilayer graphene on SiC (0001) substrate by H intercalation

Applied physics letters, 2014-11, Vol.105 (18)

2014

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Ultrafast terahertz transparency boosting in graphene meta-cavities

Nanophotonics (Berlin, Germany), 2022-12, Vol.11 (21), p.4899-4907

2022

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Transport Properties of the Two-Dimensional Hole Gas for H-Terminated Diamond with an Al2O3 Passivation Layer

Crystals (Basel), 2022-03, Vol.12 (3), p.390

2022

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Low-Temperature Thermal Transport Characteristics in Epitaxial Bilayer Graphene Microbridges

ACS omega, 2024-05, Vol.9 (21), p.23053-23059

2024

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Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond

Journal of semiconductors, 2020-12, Vol.41 (12), p.122801-85

2020

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Polycrystalline diamond MESFETs by Au-mask technology for RF applications

Science China. Technological sciences, 2013-04, Vol.56 (4), p.957-962

2013

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Design and realization of a X-band graphene amplifier MMIC

2017 IEEE 12th International Conference on ASIC (ASICON), 2017, p.694-697

2017

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IEEE_Xplore

Self-aligned graphene field-effect transistors on SiC (0001) substrates with self-oxidized gate dielectric

Journal of semiconductors, 2014-07, Vol.35 (7), p.74006-1-074006-5

2014

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The status of MAPK cascades contributes to the induction and activation of Gata4 and Nkx2.5 during the stepwise process of cardiac differentiation

Cellular signalling, 2019-02, Vol.54, p.17-26

2019

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A terahertz detector based on superconductor-graphene-superconductor Josephson junction

Carbon (New York), 2023-01, Vol.202, p.112-117

2023

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Field Effect Transistors and Low Noise Amplifier MMICs of Monolayer Graphene

IEEE electron device letters, 2021-02, Vol.42 (2), p.268-271

2021

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IEEE_Xplore

Two-Stage Ku-Band Graphene Low Noise Amplifier MMIC With Improved Fabrication Process

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1596-1599

2022

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IEEE_Xplore

Ultra-extraordinary optical transmission induced by cascade coupling of surface plasmon polaritons in composite graphene–dielectric stack

Optics express, 2020-10, Vol.28 (21), p.30502-30512

2020

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Chemical vapor deposition graphene of high mobility by gradient growth method on an 4H-SiC (0 0 0 1) substrate

Applied surface science, 2018-10, Vol.454, p.68-73

2018

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Fast growth of single-crystal graphene on Cu Ni substrate by surface oxygen supply

Diamond and related materials, 2020-01, Vol.101, p.107634, Article 107634

2020

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Photo-induced enhanced negative absorption in the graphene-dielectric hybrid meta-structure

Optics express, 2020-03, Vol.28 (6), p.8830-8842

2020

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Epitaxial graphene gas sensors on SiC substrate with high sensitivity

Journal of semiconductors, 2020-03, Vol.41 (3), p.32101

2020

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Fast growth of single-crystal graphene on CuNi substrate by surface oxygen supply

Diamond and related materials, 2020-01, Vol.101, Article 107634

2020

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Heterodyne detection at 216, 432, and 648 GHz based on bilayer graphene field-effect transistor with quasi-optical coupling

Carbon (New York), 2017-09, Vol.121, p.235-241

2017

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Contaminant-Free Wafer-Scale Assembled h‑BN/Graphene van der Waals Heterostructures for Graphene Field-Effect Transistors

ACS applied nano materials, 2021-06, Vol.4 (6), p.5677-5684

2021

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Source-field-plated Ga 2 O 3 MOSFET with a breakdown voltage of 550 V

Journal of semiconductors, 2019-01, Vol.40 (1), p.12803

2019

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Source-field-plated Ga2O3 MOSFET with a breakdown voltage of 550 V

Journal of semiconductors, 2019-01, Vol.40 (1)

2019

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High temperature RF performances of epitaxial bilayer graphene field-effect transistors on SiC substrate

4-phenylbutyrate exerts stage-specific effects on cardiac differentiation via HDAC inhibition

Hydrogen-terminated diamond MOSFETs on (0 0 1) single crystal diamond with state of the art high RF power density

Preparation and electrical transport properties of quasi free standing bilayer graphene on SiC (0001) substrate by H intercalation

Ultrafast terahertz transparency boosting in graphene meta-cavities

Transport Properties of the Two-Dimensional Hole Gas for H-Terminated Diamond with an Al2O3 Passivation Layer

Low-Temperature Thermal Transport Characteristics in Epitaxial Bilayer Graphene Microbridges

Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond

Polycrystalline diamond MESFETs by Au-mask technology for RF applications

Design and realization of a X-band graphene amplifier MMIC

Self-aligned graphene field-effect transistors on SiC (0001) substrates with self-oxidized gate dielectric

The status of MAPK cascades contributes to the induction and activation of Gata4 and Nkx2.5 during the stepwise process of cardiac differentiation

A terahertz detector based on superconductor-graphene-superconductor Josephson junction

Field Effect Transistors and Low Noise Amplifier MMICs of Monolayer Graphene

Two-Stage Ku-Band Graphene Low Noise Amplifier MMIC With Improved Fabrication Process

Ultra-extraordinary optical transmission induced by cascade coupling of surface plasmon polaritons in composite graphene–dielectric stack

Chemical vapor deposition graphene of high mobility by gradient growth method on an 4H-SiC (0 0 0 1) substrate

Fast growth of single-crystal graphene on Cu Ni substrate by surface oxygen supply

Photo-induced enhanced negative absorption in the graphene-dielectric hybrid meta-structure

Epitaxial graphene gas sensors on SiC substrate with high sensitivity

Fast growth of single-crystal graphene on CuNi substrate by surface oxygen supply

Heterodyne detection at 216, 432, and 648 GHz based on bilayer graphene field-effect transistor with quasi-optical coupling

Contaminant-Free Wafer-Scale Assembled h‑BN/Graphene van der Waals Heterostructures for Graphene Field-Effect Transistors

Source-field-plated Ga 2 O 3 MOSFET with a breakdown voltage of 550 V

Source-field-plated Ga2O3 MOSFET with a breakdown voltage of 550 V

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