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Physical review. C, Nuclear physics, 1990-05, Vol.41 (5), p.2414-2417

1990

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0,0-DIALKYL DITHIOPHOSPHATE COMPLEXES OF DIPHENYL ANTIMONY (III)

Phosphorus, sulfur, and silicon and the related elements, 1989-10, Vol.45 (3-4), p.145-150

1989

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The 0 +-0 − transitions in the A=16 system and meson-exchange currents

Physics letters. B, 1984-01, Vol.140 (1), p.11-16

1984

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0.00035 mm 2 on‐chip leakage sensing unit for various devices in 10 nm FinFET process

Electronics letters, 2018-02, Vol.54 (4), p.213-215

2018

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0.00035 mm2 on-chip leakage sensing unit for various devices in 10 nm FinFET process

Electronics letters, 2018-02, Vol.54 (4), p.213-215

2018

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A 0.004mm/sup 2/ Portable Multiphase Clock Generator Tile for 1.2GHz RISC Microprocessor

2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers, 2006, p.104-105

2006

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0.01-178.40 GHz wideband spectrum analyzer

2005 15th International Crimean Conference Microwave & Telecommunication Technology, 2005, Vol.2, p.757-758 Vol. 2

2005

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0.018pm/°C athermal silicon nitride ring resonator by polymer cladding

2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR), 2013, p.1-2

2013

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0.03-cc Super-thin HBT-MMIC Power Amplifier Module with Novel Polyimide Film Substrate for W-CDMA Mobile Handsets

2002 32nd European Microwave Conference, 2002, p.1-4

2002

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0.03- mu m gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz f sub(T) and 2 S/mm extrinsic transconductance

IEEE electron device letters, 1999-01, Vol.20 (5), p.206-208

1999

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An 0.03 mu m gate-length enhancement-mode InAlAs/InGaAs/InPMODFET' s with 300 GHz f(T) and 2 S/mm extrinsictransconductance

IEEE electron device letters, 1999-05, Vol.20 (5), p.206-208

1999

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An 0.03 mu m gate-length enhancement-mode InAlAs/InGaAs/InPMODFET''s with 300 GHz f(T) and 2 S/mm extrinsictransconductance

IEEE electron device letters, 1999-05, Vol.20 (5), p.206-208

1999

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An 0.03 μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz f/sub T/ and 2 S/mm extrinsic transconductance

IEEE electron device letters, 1999-05, Vol.20 (5), p.206-208

1999

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An 0.03 μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz fT and 2 S/mm extrinsic transconductance

IEEE electron device letters, 1999-05, Vol.20 (5), p.206-208

1999

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A 0.039um2 high performance eDRAM cell based on 32nm High-K/Metal SOI technology

2010 International Electron Devices Meeting, 2010, p.27.5.1-27.5.4

2010

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A 0.03mm/sup 2/ 9mW Wide-Range Duty-CycleCorrecting False-Lock-Free DLL with Fully Balanced Charge-Pump for DDR Interface

2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers, 2006, p.1286-1295

2006

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0.04 Hz relative optical-frequency stability in a 1.5 mu m distributed-Bragg-reflector (DBR) laser

IEEE photonics technology letters, 1989-12, Vol.1 (12), p.452-454

1989

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0. 04 Hz relative optical-frequency stability in a 1. 5. mu. m distributed-Bragg-reflector (DBR) laser

IEEE photonics technology letters, 1989-12, Vol.1:12

1989

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0.04 Hz relative optical-frequency stability in a 1.5 mum distributed-Bragg-reflector (DBR) laser

IEEE photonics technology letters, 1989-12, Vol.1 (12), p.452-454

1989

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In 0.05 Ga 0.95 As/Al 0.3 Ga 0.7 As quantum wells grown on a (411)A -oriented In 0.06 Ga 0.94 As ternary substrate by molecular beam epitaxy

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000, Vol.18 (3), p.1576-1578

2000

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In 0.05 Ga 0.95 As/Al 0.3 Ga 0.7 As quantum wells grown on a (411)A-oriented In0.06Ga0.94As ternary substrate by molecular beam epitaxy

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2000-05, Vol.18 (3), p.1576-1578

2000

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A 0.05-mm2 110-μW 10-b self-calibrating successive approximation ADC core in 0.18-μm CMOS

2007 IEEE Asian Solid-State Circuits Conference, 2007, p.224-227

2007

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0.05 mu m (3 sigma ) overlay accuracy through-the-lens alignment in an excimer laser lithography system

JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE, 1992, Vol.31 (12B), p.4161-4166

1992

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0.05 percent betamethasone dipropionate in optimized cream vehicle for psoriasis

Cutis (New York, N.Y.), 1989-02, Vol.43 (2), p.178

1989

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0.05-μm-gate InAlAs/InGaAs high electron mobility transistor and reduction of its short-channel effects

Japanese Journal of Applied Physics, 1994, Vol.33 (1B), p.798-803

1994

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0,0-DIALKYL DITHIOPHOSPHATE COMPLEXES OF DIPHENYL ANTIMONY (III)

The 0 +-0 − transitions in the A=16 system and meson-exchange currents

0.00035 mm 2 on‐chip leakage sensing unit for various devices in 10 nm FinFET process

0.00035 mm2 on-chip leakage sensing unit for various devices in 10 nm FinFET process

A 0.004mm/sup 2/ Portable Multiphase Clock Generator Tile for 1.2GHz RISC Microprocessor

0.01-178.40 GHz wideband spectrum analyzer

0.018pm/°C athermal silicon nitride ring resonator by polymer cladding

0.03-cc Super-thin HBT-MMIC Power Amplifier Module with Novel Polyimide Film Substrate for W-CDMA Mobile Handsets

0.03- mu m gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz f sub(T) and 2 S/mm extrinsic transconductance

An 0.03 mu m gate-length enhancement-mode InAlAs/InGaAs/InPMODFET' s with 300 GHz f(T) and 2 S/mm extrinsictransconductance

An 0.03 mu m gate-length enhancement-mode InAlAs/InGaAs/InPMODFET''s with 300 GHz f(T) and 2 S/mm extrinsictransconductance

An 0.03 μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz f/sub T/ and 2 S/mm extrinsic transconductance

An 0.03 μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz fT and 2 S/mm extrinsic transconductance

A 0.039um2 high performance eDRAM cell based on 32nm High-K/Metal SOI technology

A 0.03mm/sup 2/ 9mW Wide-Range Duty-CycleCorrecting False-Lock-Free DLL with Fully Balanced Charge-Pump for DDR Interface

0.04 Hz relative optical-frequency stability in a 1.5 mu m distributed-Bragg-reflector (DBR) laser

0. 04 Hz relative optical-frequency stability in a 1. 5. mu. m distributed-Bragg-reflector (DBR) laser

0.04 Hz relative optical-frequency stability in a 1.5 mum distributed-Bragg-reflector (DBR) laser

In 0.05 Ga 0.95 As/Al 0.3 Ga 0.7 As quantum wells grown on a (411)A -oriented In 0.06 Ga 0.94 As ternary substrate by molecular beam epitaxy

In 0.05 Ga 0.95 As/Al 0.3 Ga 0.7 As quantum wells grown on a (411)A-oriented In0.06Ga0.94As ternary substrate by molecular beam epitaxy

A 0.05-mm2 110-μW 10-b self-calibrating successive approximation ADC core in 0.18-μm CMOS

0.05 mu m (3 sigma ) overlay accuracy through-the-lens alignment in an excimer laser lithography system

0.05 percent betamethasone dipropionate in optimized cream vehicle for psoriasis

0.05-μm-gate InAlAs/InGaAs high electron mobility transistor and reduction of its short-channel effects

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