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Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.256-261

2018

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Terrestrial Neutron-Induced Failures in Silicon Carbide Power MOSFETs and Diodes

IEEE transactions on nuclear science, 2018-06, Vol.65 (6), p.1248-1254

2018

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Predicting Cosmic Ray-Induced Failures in Silicon Carbide Power Devices

IEEE transactions on nuclear science, 2019-07, Vol.66 (7), p.1828-1832

2019

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Ultra high voltage MOS controlled 4H-SiC power switching devices

Semiconductor science and technology, 2015-08, Vol.30 (8), p.84001

2015

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Mosaic variant in ATP2C1 presenting as relapsing linear acantholytic dermatosis

British journal of dermatology (1951), 2020-07, Vol.183 (1), p.155-157

2020

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Posterior Reversible Encephalopathy Syndrome (PRES) and Drug-Induced Hypersensitivity Syndrome (DIHS) following Immunotherapy and BRAF/MEK Inhibition with Continued Response in Metastatic Melanoma

Case reports in oncological medicine, 2021-05, Vol.2021, p.1-5

2021

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Drain current compression in GaN MODFETs under large-signal modulation at microwave frequencies

Electronics letters, 1999-01, Vol.35 (16), p.1380-1382

1999

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Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability

Journal of crystal growth, 2004-12, Vol.272 (1), p.285-292

2004

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Abstract No. 134 Histotripsy for the treatment of uterine leiomyomas: a feasibility study in ex vivo uterine fibroids

Journal of vascular and interventional radiology, 2022-06, Vol.33 (6), p.S63-S63

2022

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C80-I THORACIC ONCOLOGY CASE REPORTS III: Diarrhea And Flushing After Endobronchial Mass Biopsy: An Unusual Clue Toward Diagnosis

American journal of respiratory and critical care medicine, 2017-01, Vol.195

2017

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Mosaic Variant in ATP2C1 Presenting as Relapsing Linear Acantholytic Dermatosis: Case Report

British journal of dermatology (1951), 2019-12, Vol.183 (1), p.155-157

2019

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15 kV n-GTOs in 4H-SiC

Materials science forum, 2019-07, Vol.963, p.651-654

2019

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C62 CASE REPORTS: PULMONARY INFECTIONS - MISCELLANEOUS: Bronchopulmonary Kaposi's Sarcoma Without Cutaneous Lesions

American journal of respiratory and critical care medicine, 2017-01, Vol.195

2017

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A 4H Silicon Carbide Gate Buffer for Integrated Power Systems

IEEE transactions on power electronics, 2014-02, Vol.29 (2), p.539-542

2014

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Posterior Reversible Encephalopathy Syndrome following Immunotherapy and BRAF/MEK Inhibition with Continued Response in Metastatic Melanoma

Case reports in oncological medicine, 2021-05, Vol.2021

2021

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Impact of carrier lifetime enhancement using high temperature oxidation on 15 kV 4H-SiC P-GTO thyristor

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Blocking Performance Improvements for 4H-SiC P-GTO Thyristors with Carrier Lifetime Enhancement Processes

Materials science forum, 2018-06, Vol.924, p.633-636

2018

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35% drive current improvement from recessed-SiGe drain extensions on 37 nm gate length PMOS

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004, 2004, p.48-49

2004

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Reliability and stability of SiC power mosfets and next-generation SiC MOSFETs

2014 IEEE Workshop on Wide Bandgap Power Devices and Applications, 2014, p.139-142

2014

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An Analysis of Forward Conduction Characteristics of Ultra High Voltage 4H-SiC N-IGBTs

Materials Science Forum, 2016-05, Vol.858, p.945-948

2016

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20 kV 4H-SiC N-IGBTs

Materials science forum, 2014-02, Vol.778-780, p.1030-1033

2014

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Pulmonary eosinophils express HLA-DR in chronic eosinophilic pneumonia

Journal of allergy and clinical immunology, 1993-09, Vol.92 (3), p.442-449

1993

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Power performance and scalability of AlGaN/GaN power MODFETs

IEEE transactions on microwave theory and techniques, 2000-10, Vol.48 (10), p.1694-1700

2000

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15 kV IGBTs in 4H-SiC

Materials science forum, 2013-01, Vol.740-742, p.954-957, Article 954

2013

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A 4H Silicon Carbide Gate Buffer for Integrated Power Systems

IEEE transactions on power electronics, 2014-02, Vol.29 (2)

2014

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Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

Terrestrial Neutron-Induced Failures in Silicon Carbide Power MOSFETs and Diodes

Predicting Cosmic Ray-Induced Failures in Silicon Carbide Power Devices

Ultra high voltage MOS controlled 4H-SiC power switching devices

Mosaic variant in ATP2C1 presenting as relapsing linear acantholytic dermatosis

Posterior Reversible Encephalopathy Syndrome (PRES) and Drug-Induced Hypersensitivity Syndrome (DIHS) following Immunotherapy and BRAF/MEK Inhibition with Continued Response in Metastatic Melanoma

Drain current compression in GaN MODFETs under large-signal modulation at microwave frequencies

Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability

Abstract No. 134 Histotripsy for the treatment of uterine leiomyomas: a feasibility study in ex vivo uterine fibroids

C80-I THORACIC ONCOLOGY CASE REPORTS III: Diarrhea And Flushing After Endobronchial Mass Biopsy: An Unusual Clue Toward Diagnosis

Mosaic Variant in ATP2C1 Presenting as Relapsing Linear Acantholytic Dermatosis: Case Report

15 kV n-GTOs in 4H-SiC

C62 CASE REPORTS: PULMONARY INFECTIONS - MISCELLANEOUS: Bronchopulmonary Kaposi's Sarcoma Without Cutaneous Lesions

A 4H Silicon Carbide Gate Buffer for Integrated Power Systems

Posterior Reversible Encephalopathy Syndrome following Immunotherapy and BRAF/MEK Inhibition with Continued Response in Metastatic Melanoma

Impact of carrier lifetime enhancement using high temperature oxidation on 15 kV 4H-SiC P-GTO thyristor

Blocking Performance Improvements for 4H-SiC P-GTO Thyristors with Carrier Lifetime Enhancement Processes

35% drive current improvement from recessed-SiGe drain extensions on 37 nm gate length PMOS

Reliability and stability of SiC power mosfets and next-generation SiC MOSFETs

An Analysis of Forward Conduction Characteristics of Ultra High Voltage 4H-SiC N-IGBTs

20 kV 4H-SiC N-IGBTs

Pulmonary eosinophils express HLA-DR in chronic eosinophilic pneumonia

Power performance and scalability of AlGaN/GaN power MODFETs

15 kV IGBTs in 4H-SiC

A 4H Silicon Carbide Gate Buffer for Integrated Power Systems

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