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On the use of dimeric antimony in molecular beam epitaxy

Journal of crystal growth, 1995-11, Vol.156 (1), p.30-38

1995

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Anomalous behavior of ion-implanted GaSb

Applied physics letters, 1991-10, Vol.59 (15), p.1872-1874

1991

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Optical activation of Er3+ implanted in silicon by oxygen impurities

Japanese journal of applied physics, 1990, Vol.29 (4), p.L524-L526

1990

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High reflectivity 1.55 μm (Al)GaAsSb/AlAsSb Bragg reflector lattice matched on InP substrates

Applied physics letters, 1995-01, Vol.66 (4), p.442-444

1995

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Study of a WSi2/polycrystalline silicon/monocrystalline silicon structure for a complementary metal-oxide-semiconductor for a compatible self-aligned bipolar transistor emitter

Journal of applied physics, 1990-01, Vol.67 (1), p.515-523

1990

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Characterization of phosphorus oxinitride (PON) gate insulators for InP metal-insulator-semiconductor devices

Thin solid films, 1997-11, Vol.310 (1), p.1-7

1997

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Boron diffusion in SiO2 based dielectric thin layers

Journal of non-crystalline solids, 1995-07, Vol.187, p.106-111

1995

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Optical Activation of Ion Implanted Rare-Earths

MRS proceedings, 1993, Vol.301, Article 181

1993

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Influence of halogenation on superconducting properties of oxygen-deficient YBa2CU3Ox thin films. Comparison with halogenation of YBa2CU3Ox ceramics

Physica. C, Superconductivity, 1998-04, Vol.299 (3-4), p.197-204

1998

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Impurities and dopants in vanadium doped CdTe

Optical materials, 1997-01, Vol.7 (1-2), p.21-31

1997

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Optical Activation of Er 3+ Implanted in Silicon by Oxygen Impurities

Japanese Journal of Applied Physics, 1990-04, Vol.29 (4A), p.L524

1990

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Unintentional hydrogen concentration in liquid encapsulation Czochralski grown III–V compounds

Applied physics letters, 1991-12, Vol.59 (23), p.2980-2982

1991

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Relationship between deep levels in vanadium-doped CdTe and photorefractive effect

Journal of crystal growth, 1996-04, Vol.161 (1), p.264-270

1996

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GaPSb : a new ternary material for Schottky diode fabrication on InP

Applied physics letters, 1991-07, Vol.59 (4), p.423-424

1991

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Realization and characterization of Er and Yb glasses obtained by the sol-gel method

Materials science & engineering. B, Solid-state materials for advanced technology, 1991-09, Vol.9 (4), p.455-457

1991

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Secondary ion mass spectrometry generates swelling of GaSb : depth resolution and secondary ion yields

Journal of applied physics, 1993-03, Vol.73 (5), p.2051-2056

1993

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Field-effect transistor with diphthalocyanine thin film

Electronics letters, 1988-05, Vol.24 (11), p.674-675

1988

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Influence of zinc on the photorefractive behaviour of Cd1-xZnxTe:V

Journal of crystal growth, 1996-04, Vol.161 (1-4), p.250-258

1996

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Electrical and optical properties of rare earth dopants (Yb, Er) in n-type III-V (InP) semiconductors

Journal of physics. Condensed matter, 1990-01, Vol.2 (2), p.479-483

1990

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A comparative study of TiSi2 obtained by solid-state reaction and chemical vapor deposition

Applied surface science, 1993-11, Vol.73, p.25-30

1993

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Grain boundary enhanced oxygen out-diffusion in annealed polycrystalline Si/SiO2/crystalline Si structures

Thin solid films, 1996-09, Vol.286 (1-2), p.317-320

1996

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Effective trap concentration in photo refractive CdTe: V and ZnCdTe: V crystals

Optical materials, 1995, Vol.4 (2), p.267-270

1995

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Thin films of (RE)Ba2Cu3O7 epitaxially grown in situ by excimer laser ablation : structural and superconducting behaviour

Materials science & engineering. B, Solid-state materials for advanced technology, 1993-03, Vol.18 (2), p.115-121

1993

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Swelling of GaSb at low energies (1.3–14.5 keV)

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1993-06, Vol.80, p.543-547

1993

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Comprehensive study of AuMn p-type ohmic contact for GaAs/GaAlAs heterojunction bipolar transistors

Journal of applied physics, 1986-06, Vol.59 (11), p.3783-3786

1986

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On the use of dimeric antimony in molecular beam epitaxy

Anomalous behavior of ion-implanted GaSb

Optical activation of Er3+ implanted in silicon by oxygen impurities

High reflectivity 1.55 μm (Al)GaAsSb/AlAsSb Bragg reflector lattice matched on InP substrates

Study of a WSi2/polycrystalline silicon/monocrystalline silicon structure for a complementary metal-oxide-semiconductor for a compatible self-aligned bipolar transistor emitter

Characterization of phosphorus oxinitride (PON) gate insulators for InP metal-insulator-semiconductor devices

Boron diffusion in SiO2 based dielectric thin layers

Optical Activation of Ion Implanted Rare-Earths

Influence of halogenation on superconducting properties of oxygen-deficient YBa2CU3Ox thin films. Comparison with halogenation of YBa2CU3Ox ceramics

Impurities and dopants in vanadium doped CdTe

Optical Activation of Er 3+ Implanted in Silicon by Oxygen Impurities

Unintentional hydrogen concentration in liquid encapsulation Czochralski grown III–V compounds

Relationship between deep levels in vanadium-doped CdTe and photorefractive effect

GaPSb : a new ternary material for Schottky diode fabrication on InP

Realization and characterization of Er and Yb glasses obtained by the sol-gel method

Secondary ion mass spectrometry generates swelling of GaSb : depth resolution and secondary ion yields

Field-effect transistor with diphthalocyanine thin film

Influence of zinc on the photorefractive behaviour of Cd1-xZnxTe:V

Electrical and optical properties of rare earth dopants (Yb, Er) in n-type III-V (InP) semiconductors

A comparative study of TiSi2 obtained by solid-state reaction and chemical vapor deposition

Grain boundary enhanced oxygen out-diffusion in annealed polycrystalline Si/SiO2/crystalline Si structures

Effective trap concentration in photo refractive CdTe: V and ZnCdTe: V crystals

Thin films of (RE)Ba2Cu3O7 epitaxially grown in situ by excimer laser ablation : structural and superconducting behaviour

Swelling of GaSb at low energies (1.3–14.5 keV)

Comprehensive study of AuMn p-type ohmic contact for GaAs/GaAlAs heterojunction bipolar transistors

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