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Thru‐Hole Epitaxy: A Highway for Controllable and Transferable Epitaxial Growth

Advanced materials interfaces, 2023-02, Vol.10 (4), p.n/a

2023

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A surface flattening mechanism of a heteroepitaxial film consisting of faceted non-flat top twins: [11¯3¯]-oriented GaN films grown on m -plane sapphire substrates

Applied physics letters, 2014-03, Vol.104 (9)

2014

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Whispering-gallery-modelike-enhanced emission from ZnO nanodisk

Applied physics letters, 2006-02, Vol.88 (9), p.093104-093104-3

2006

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Nucleation characteristics of GaN nanorods grown on etched sapphire substrates by hydride vapor phase epitaxy

Journal of crystal growth, 2009-05, Vol.311 (10), p.2953-2955

2009

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Use of Polytypes to Control Crystallographic Orientation of GaN

Crystal growth & design, 2010-12, Vol.10 (12), p.5307-5311

2010

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Two-dimensional non-close-packed arrays of polystyrene microspheres prepared by controlling the size of polystyrene microspheres

Polymer (Guilford), 2019-12, Vol.185, p.121938, Article 121938

2019

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Transferable Thru-Hole Epitaxy of GaN and ZnO, Respectively, Over Graphene and MoS2 as a 2D Space Layer

Crystal growth & design, 2022-12, Vol.22 (12), p.6995-7007

2022

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Non‐edge‐triggered inversion from Ga polarity to N polarity of c‐GaN domains on an SiO2 mask during epitaxial lateral overgrowth

Journal of applied crystallography, 2019-06, Vol.52 (3), p.532-537

2019

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Transferable Thru-Hole Epitaxy of GaN and ZnO, Respectively, Over Graphene and MoS 2 as a 2D Space Layer

Crystal growth & design, 2022-12, Vol.22 (12), p.6995-7007

2022

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Establishing Epitaxial Connectedness in Multi‐Stacking: The Survival of Thru‐Holes in Thru‐Hole Epitaxy

Advanced engineering materials, 2024-02, Vol.26 (3), p.n/a

2024

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Non-edge-triggered inversion from Ga polarity to N polarity of c -GaN domains on an SiO 2 mask during epitaxial lateral overgrowth

Journal of applied crystallography, 2019-06, Vol.52 (3), p.532-537

2019

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Subtle interplay between polytypism and preferred growth direction alignment in GaN nanorods non-catalytically grown on Si(1 1 1) substrates by using hydride vapor phase epitaxy

Journal of crystal growth, 2010-07, Vol.312 (14), p.2038-2043

2010

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A Laterally Overgrown GaN Thin Film Epitaxially Separated from but Physically Attached to an SiO2‑Patterned Sapphire Substrate

Crystal growth & design, 2020-09, Vol.20 (9), p.6198-6204

2020

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A Laterally Overgrown GaN Thin Film Epitaxially Separated from but Physically Attached to an SiO 2 -Patterned Sapphire Substrate

Crystal growth & design, 2020-09, Vol.20 (9), p.6198-6204

2020

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Spontaneous pattern transfer and selective growth of graphene on a Cu foil

Carbon (New York), 2015-02, Vol.82, p.238-244

2015

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Novel approach to the fabrication of a strain- and crack-free GaN free-standing template: Self-separation assisted by the voids spontaneously formed during the transition in the preferred orientation

Journal of crystal growth, 2010, Vol.312 (2), p.198-201

2010

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Controlled growth and surface morphology evolution of m-oriented GaN faceted-domains on SiO2-patterned m-plane sapphire substrates

Applied physics letters, 2010-09, Vol.97 (10)

2010

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Inversion domain boundary structure of laterally overgrown c‐GaN domains including the inversion from Ga to N polarity at a mask pattern boundary

Journal of applied crystallography, 2018-12, Vol.51 (6), p.1551-1555

2018

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Spontaneous transition in preferred orientation of GaN domains grown on r-plane sapphire substrate from [112¯] to [0001]

Applied physics letters, 2009-03, Vol.94 (10)

2009

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Faceted growth of ()‐oriented GaN domains on an SiO2‐patterned m‐plane sapphire substrate using polarity inversion

Journal of applied crystallography, 2017-02, Vol.50 (1), p.30-35

2017

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Polarity-inverted lateral overgrowth and selective wet-etching and regrowth (PILOSWER) of GaN

Scientific reports, 2018-03, Vol.8 (1), p.4112-8, Article 4112

2018

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Faceted growth of ({\bf {\overline 1}103})-oriented GaN domains on an SiO 2 -patterned m -plane sapphire substrate using polarity inversion

Journal of applied crystallography, 2017-02, Vol.50 (1), p.30-35

2017

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Faceted growth of ()-oriented GaN domains on an SiO sub(2)-patterned m-plane sapphire substrate using polarity inversion

Journal of applied crystallography, 2017-02, Vol.50 (1), p.30-35

2017

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Surface-morphology evolution and strain relaxation during heteroepitaxial growth of GaN films without low-temperature nucleation layers

Applied physics letters, 2007-04, Vol.90 (15), p.151905-151905-3

2007

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Surface morphology of GaN nanorods grown by catalyst-free hydride vapor phase epitaxy

Applied surface science, 2009-11, Vol.256 (4), p.1078-1081

2009

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Thru‐Hole Epitaxy: A Highway for Controllable and Transferable Epitaxial Growth

A surface flattening mechanism of a heteroepitaxial film consisting of faceted non-flat top twins: [11¯3¯]-oriented GaN films grown on m -plane sapphire substrates

Whispering-gallery-modelike-enhanced emission from ZnO nanodisk

Nucleation characteristics of GaN nanorods grown on etched sapphire substrates by hydride vapor phase epitaxy

Use of Polytypes to Control Crystallographic Orientation of GaN

Two-dimensional non-close-packed arrays of polystyrene microspheres prepared by controlling the size of polystyrene microspheres

Transferable Thru-Hole Epitaxy of GaN and ZnO, Respectively, Over Graphene and MoS2 as a 2D Space Layer

Non‐edge‐triggered inversion from Ga polarity to N polarity of c‐GaN domains on an SiO2 mask during epitaxial lateral overgrowth

Transferable Thru-Hole Epitaxy of GaN and ZnO, Respectively, Over Graphene and MoS 2 as a 2D Space Layer

Establishing Epitaxial Connectedness in Multi‐Stacking: The Survival of Thru‐Holes in Thru‐Hole Epitaxy

Non-edge-triggered inversion from Ga polarity to N polarity of c -GaN domains on an SiO 2 mask during epitaxial lateral overgrowth

Subtle interplay between polytypism and preferred growth direction alignment in GaN nanorods non-catalytically grown on Si(1 1 1) substrates by using hydride vapor phase epitaxy

A Laterally Overgrown GaN Thin Film Epitaxially Separated from but Physically Attached to an SiO2‑Patterned Sapphire Substrate

A Laterally Overgrown GaN Thin Film Epitaxially Separated from but Physically Attached to an SiO 2 -Patterned Sapphire Substrate

Spontaneous pattern transfer and selective growth of graphene on a Cu foil

Novel approach to the fabrication of a strain- and crack-free GaN free-standing template: Self-separation assisted by the voids spontaneously formed during the transition in the preferred orientation

Controlled growth and surface morphology evolution of m-oriented GaN faceted-domains on SiO2-patterned m-plane sapphire substrates

Inversion domain boundary structure of laterally overgrown c‐GaN domains including the inversion from Ga to N polarity at a mask pattern boundary

Spontaneous transition in preferred orientation of GaN domains grown on r-plane sapphire substrate from [112¯] to [0001]

Faceted growth of ()‐oriented GaN domains on an SiO2‐patterned m‐plane sapphire substrate using polarity inversion

Polarity-inverted lateral overgrowth and selective wet-etching and regrowth (PILOSWER) of GaN

Faceted growth of ({\bf {\overline 1}103})-oriented GaN domains on an SiO 2 -patterned m -plane sapphire substrate using polarity inversion

Faceted growth of ()-oriented GaN domains on an SiO sub(2)-patterned m-plane sapphire substrate using polarity inversion

Surface-morphology evolution and strain relaxation during heteroepitaxial growth of GaN films without low-temperature nucleation layers

Surface morphology of GaN nanorods grown by catalyst-free hydride vapor phase epitaxy

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