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Angle-resolved photoemission from stoichiometric GaN(0001)-1×1

Surface science, 2005-06, Vol.584 (2-3), p.169-178

2005

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High-resolution core-level photoelectron spectroscopy of Mg/Si( [formula omitted]) surfaces

Surface science, 2003-01, Vol.523 (1), p.30-36

2003

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Angle-resolved photoemission from stoichiometric GaN(0001) -1 x 1

Surface science, 2005-06, Vol.584 (2-3), p.169-178

2005

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The effects of AsOx and SrF2 interlayers on GaAs growth over EuBa2Cu3O7−y(001)

Surface science, 1992-05, Vol.269-270, p.1096-1100

1992

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Preparation of stoichiometric GaN(0 0 0 1)-1 × 1 studied with spectromicroscopy

Surface science, 2004-11, Vol.572 (2), p.409-417

2004

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Preparation of stoichiometric GaN(0001)-1 x 1 studied with spectromicroscopy

Surface science, 2004-11, Vol.572 (2-3), p.409-417

2004

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Preparation of stoichiometric GaN(0001)1x1 studied with spectromicroscopy

Surface science, 2004, Vol.572 (2-3), p.409

2004

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Surface structures of (NH4)2Sx-treated GaAs studied by S K-edge X-ray absorption fine structure

Surface science, 1996-06, Vol.357-358, p.527-531

1996

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Surface structures of (NH 4) 2S x-treated GaAs studied by S K-edge X-ray absorption fine structure

Surface science, 1996, Vol.357, p.527-531

1996

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Bonding states of chemisorbed sulfur atoms on GaAs

Surface science, 1991-02, Vol.242 (1), p.335-340

1991

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A Study of Dry Etching-Related Contaminations on Si and SiO2

Surface science, 1979-07, Vol.86, p.858-865

Oshima, M

1979

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Surface termination of GaAs(001) by Sb dimers

Surface science, 1996-06, Vol.357, p.540-544

1996

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The influence of a RbF interlayer on the Ge/GaAs interface properties

Surface science, 1991-02, Vol.242 (1), p.319-323

1991

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Observation of interface plasmon excitation in photoemission spectroscopy from the heterostructures Cu/RbF/GaAs(100) and Cu/RbF/Ge(100)

Surface science, 1991-09, Vol.255 (3), p.L557-L561

1991

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The surface structure of an organic conductor (BEDT-TTF) 2KHg(SCN) 4 observed by scanning tunneling microscopy

Surface science, 1991-02, Vol.242 (1), p.18-22

1991

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X-ray standing wave analysis of the GaAs/Si interface

Surface science, 1991-07, Vol.251-252, p.185-190

1991

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Photoemission study of NaF and KF overlayers on GaAs surfaces

Surface science, 1989-04, Vol.211, p.759-766

1989

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Atomic structure of monolayer graphite formed on Ni(111)

Surface science, 1997-03, Vol.374 (1), p.61-64

1997

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Scanning tunneling microscopy study on a BC3 covered NbB2(0001) surface

Surface science, 2006-09, Vol.600 (17), p.3518-3521

2006

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Modification of the surface phonon dispersion of a graphite monolayer adsorbed on Ni(111) caused by intercalation of Yb, Cu and Ag

Surface science, 2000-05, Vol.454, p.437-441

2000

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TMC(1 0 0) surface relaxation studied with low-energy-electron-diffraction intensity analysis

Surface science, 2002-10, Vol.517 (1), p.59-64

2002

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Nano-oxide fabrication on thin-films of 3d-metal compounds and alloys

Surface science, 2004-09, Vol.566, p.349-355

2004

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Measurements of X-ray photoelectron diffraction using high angular resolution and high transmission electron energy analyzer

Surface science, 2001-11, Vol.493 (1-3), p.29-35

2001

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Coherent electron emission from carbon nanotubes.: Young's interference in the emission patterns

Surface science, 2002-08, Vol.514 (1), p.283-290

2002

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Scanning tunneling microscopy study on a BC 3 covered NbB 2(0 0 0 1) surface

Surface science, 2006, Vol.600 (17), p.3518-3521

2006

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Angle-resolved photoemission from stoichiometric GaN(0001)-1×1

High-resolution core-level photoelectron spectroscopy of Mg/Si( [formula omitted]) surfaces

Angle-resolved photoemission from stoichiometric GaN(0001) -1 x 1

The effects of AsOx and SrF2 interlayers on GaAs growth over EuBa2Cu3O7−y(001)

Preparation of stoichiometric GaN(0 0 0 1)-1 × 1 studied with spectromicroscopy

Preparation of stoichiometric GaN(0001)-1 x 1 studied with spectromicroscopy

Preparation of stoichiometric GaN(0001)1x1 studied with spectromicroscopy

Surface structures of (NH4)2Sx-treated GaAs studied by S K-edge X-ray absorption fine structure

Surface structures of (NH 4) 2S x-treated GaAs studied by S K-edge X-ray absorption fine structure

Bonding states of chemisorbed sulfur atoms on GaAs

A Study of Dry Etching-Related Contaminations on Si and SiO2

Surface termination of GaAs(001) by Sb dimers

The influence of a RbF interlayer on the Ge/GaAs interface properties

Observation of interface plasmon excitation in photoemission spectroscopy from the heterostructures Cu/RbF/GaAs(100) and Cu/RbF/Ge(100)

The surface structure of an organic conductor (BEDT-TTF) 2KHg(SCN) 4 observed by scanning tunneling microscopy

X-ray standing wave analysis of the GaAs/Si interface

Photoemission study of NaF and KF overlayers on GaAs surfaces

Atomic structure of monolayer graphite formed on Ni(111)

Scanning tunneling microscopy study on a BC3 covered NbB2(0001) surface

Modification of the surface phonon dispersion of a graphite monolayer adsorbed on Ni(111) caused by intercalation of Yb, Cu and Ag

TMC(1 0 0) surface relaxation studied with low-energy-electron-diffraction intensity analysis

Nano-oxide fabrication on thin-films of 3d-metal compounds and alloys

Measurements of X-ray photoelectron diffraction using high angular resolution and high transmission electron energy analyzer

Coherent electron emission from carbon nanotubes.: Young's interference in the emission patterns

Scanning tunneling microscopy study on a BC 3 covered NbB 2(0 0 0 1) surface

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