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Phase Transitions in Silicon-Carbide Epitaxial Layers Grown on a Silicon Substrate by the Method of the Coordinated Substitution of Atoms

Semiconductors (Woodbury, N.Y.), 2022, Vol.56 (6), p.321-324

2022

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Terahertz Emission from Silicon Carbide Nanostructures

Semiconductors (Woodbury, N.Y.), 2023-08, Vol.57 (8), p.347-353

2023

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On the Mechanism of the Vapor–Solid–Solid Growth of Au-Catalyzed GaAs Nanowires

Semiconductors (Woodbury, N.Y.), 2019-03, Vol.53 (3), p.350-360

2019

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Magnetic Properties of Thin Epitaxial SiC Layers Grown by the Atom-Substitution Method on Single-Crystal Silicon Surfaces

Semiconductors (Woodbury, N.Y.), 2021-02, Vol.55 (2), p.137-145

2021

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Registration of Terahertz Irradiation with Silicon Carbide Nanostructures

Semiconductors (Woodbury, N.Y.), 2023-04, Vol.57 (4), p.203-210

2023

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Top-Down Formation of Biocompatible SiC Nanotubes

Semiconductors (Woodbury, N.Y.), 2024-03, Vol.58 (3), p.209-213

2024

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Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice

Semiconductors (Woodbury, N.Y.), 2017-05, Vol.51 (5), p.621-627

2017

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Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources

Semiconductors (Woodbury, N.Y.), 2018-04, Vol.52 (4), p.462-464

2018

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On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon

Semiconductors (Woodbury, N.Y.), 2022-04, Vol.56 (4), p.253-258

2022

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Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates

Semiconductors (Woodbury, N.Y.), 2019-12, Vol.53 (14), p.1935-1938

2019

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Nanoheterostructures with improved parameters for high-speed and efficient plasmon-polariton light emitting Schottky diodes

Semiconductors (Woodbury, N.Y.), 2016-11, Vol.50 (11), p.1554-1560

2016

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Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the Epitaxial Growth of GaN Layers on SiC/por-Si/c-Si Templates

Semiconductors (Woodbury, N.Y.), 2020-05, Vol.54 (5), p.596-608

2020

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Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures

Semiconductors (Woodbury, N.Y.), 2020-04, Vol.54 (4), p.417-425

2020

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MOS-Hydride Epitaxy Growth of InGaAs/GaAs Submonolayer Quantum Dots for the Excitation of Surface Plasmon–Polaritons

Semiconductors (Woodbury, N.Y.), 2019-03, Vol.53 (3), p.326-331

2019

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Electronic Structure of SiN Layers on Si Substrates

Semiconductors (Woodbury, N.Y.), 2019-12, Vol.53 (14), p.1935

2019

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Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers

Semiconductors (Woodbury, N.Y.), 2019-02, Vol.53 (2), p.180-187

2019

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Diagnostics of the efficiency of surface plasmon-polariton excitation by quantum dots via polarization measurements of the output radiation

Semiconductors (Woodbury, N.Y.), 2015-06, Vol.49 (6), p.785-790

2015

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The C 1s core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4° layer and Cs/SiC/Si(111)-4° interface

Semiconductors (Woodbury, N.Y.), 2016-10, Vol.50 (10), p.1327-1332

2016

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Induced surface states of the ultrathin Ba/3C-SiC(111) interface

Semiconductors (Woodbury, N.Y.), 2016-04, Vol.50 (4), p.457-461

2016

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Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si Epitaxial Layers

Semiconductors (Woodbury, N.Y.), 2019-02, Vol.53 (2), p.180

2019

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Terahertz emission from silicon carbide nanostructures

Semiconductors, 2022, Vol.56 (13), p.2050

2022

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Registration of terahertz irradiation with silicon carbide nanostructures

Semiconductors, 2022, Vol.55 (14), p.2157

2022

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Photoluminescence spectra of n-ZnO/p-GaN:(Er + Zn) and p-AlGaN:(Er + Zn) heterostructures

Semiconductors (Woodbury, N.Y.), 2008-07, Vol.42 (7), p.766-771

2008

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Initial stages of growth of diamond island films on crystalline silicon

Semiconductors (Woodbury, N.Y.), 2002-08, Vol.36 (8), p.848-851

2002

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Phase Transitions in Silicon-Carbide Epitaxial Layers Grown on a Silicon Substrate by the Method of the Coordinated Substitution of Atoms

Terahertz Emission from Silicon Carbide Nanostructures

On the Mechanism of the Vapor–Solid–Solid Growth of Au-Catalyzed GaAs Nanowires

Magnetic Properties of Thin Epitaxial SiC Layers Grown by the Atom-Substitution Method on Single-Crystal Silicon Surfaces

Registration of Terahertz Irradiation with Silicon Carbide Nanostructures

Top-Down Formation of Biocompatible SiC Nanotubes

Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice

Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources

On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon

Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates

Nanoheterostructures with improved parameters for high-speed and efficient plasmon-polariton light emitting Schottky diodes

Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the Epitaxial Growth of GaN Layers on SiC/por-Si/c-Si Templates

Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures

MOS-Hydride Epitaxy Growth of InGaAs/GaAs Submonolayer Quantum Dots for the Excitation of Surface Plasmon–Polaritons

Electronic Structure of SiN Layers on Si Substrates

Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers

Diagnostics of the efficiency of surface plasmon-polariton excitation by quantum dots via polarization measurements of the output radiation

The C 1s core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4° layer and Cs/SiC/Si(111)-4° interface

Induced surface states of the ultrathin Ba/3C-SiC(111) interface

Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si Epitaxial Layers

Terahertz emission from silicon carbide nanostructures

Registration of terahertz irradiation with silicon carbide nanostructures

Photoluminescence spectra of n-ZnO/p-GaN:(Er + Zn) and p-AlGaN:(Er + Zn) heterostructures

Initial stages of growth of diamond island films on crystalline silicon

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