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Photoelectron Angular Distributions Of Ultrathin NI/CU(001) Films

MRS proceedings, 1996, Vol.437, Article 39

1996

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Structural and Electrical Characterization of Highly Tetrahedral-Coordinated Diamond-Like Carbon Films Grown by Pulsed-Laser Deposition

MRS proceedings, 1994, Vol.349, Article 507

1994

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The Growth and Optimization of InPSb/InGaAs/InAsSb Strained-Layer Superlattice Emitters by Metal Organic Chemical Vapor Deposition

MRS proceedings, 1995, Vol.379, p.283-288, Article 283

1995

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Quantum-Confined Stark Effect and Polarization Field in Single Quantum Well InGaN/GaN LEDs

MRS proceedings, 2005-12, Vol.892 (1), Article 3201

2005

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Characterization of a Dominant Electron Trap in GaNAs Using Deep-Level Transient Spectroscopy

MRS proceedings, 2005, Vol.891, Article 0891-EE10-35

2005

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Characterization of Minority-Carrier Hole Transport in Nitride-Based Light-Emitting Diodes with Optical and Electrical Time-Resolved Techniques

MRS proceedings, 2004, Vol.831, Article E10.9

2004

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Advances in AlGaN-based Deep UV LEDs

MRS proceedings, 2004, Vol.831, Article E10.1

2004

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The Growth of InAsSb/InAs/InPSb/InAs Mid-Infrared Emitters by Metal-Organic Chemical Vapor Deposition

MRS proceedings, 2000-01, Vol.607, p.303-308, Article 303

2000

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Determination of AlGaN/GaN HFET Electric Fields using Electroreflectance

MRS proceedings, 2002, Vol.743, Article L10.4

2002

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The Role of Nitrogen-Induced Localization and Defects in InGaAsN (? 2% N): Comparison of InGaAsN Grown by Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

MRS proceedings, 2001, Vol.692, Article H1.7.1

2001

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Development of Infrared Detectors Based on Type II, InAsSb Strained-Layer Superlattices

MRS proceedings, 1990, Vol.216, Article 163

Kurtz, Steven R.

1990

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Preparation of AlAsSb and Mid-Infrared (3–5μm) Lasers By Metal-Organic Chemical Vapor Deposition

MRS proceedings, 1996, Vol.450, Article 43

1996

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Novel Mid-Infrared Lasers with Compressively Strained InAsSb Active Regions

MRS proceedings, 1996, Vol.450, Article 23

1996

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Time-Resolved Photoluminescence Studies of InxGa1−xAs1−yNy

MRS proceedings, 1999, Vol.607

1999

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Time-Resolved Photoluminescence Studies of In x Ga 1−x As 1−y N y

MRS proceedings, 1999, Vol.607, Article 153

1999

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Recent Progress in the Growth of Mid-ir Emitters by Metalorganic Chemical Vapor Deposition

MRS proceedings, 1997, Vol.484, Article 19

1997

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Deep Level Defect Studies in Mocvd-Grown In x Ga 1−s As 1−y N y Films Lattice-Matched to GaAs

MRS proceedings, 1998, Vol.535, Article 59

1998

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Deep Level Defect Studies in Mocvd-Grown InxGa1−sAs1−yNy Films Lattice-Matched to GaAs

MRS proceedings, 1998, Vol.535

1998

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Advanced Dielectrics for Passivation of INSB

MRS proceedings, 1992, Vol.284, Article 613

1992

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The Effect of Phosphine Pressure on the Band Gap of Ga 0.5 In 0.5 P

MRS proceedings, 1994, Vol.340, Article 117

1994

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Determination of the Order Parameter by Quantitative Tem Techniques

MRS proceedings, 1995, Vol.417, Article 55

1995

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The Growth of InAsSb/InGaAs Strained-Layer Superlattices by Metal-Organic Chemical Vapor Deposition

MRS proceedings, 1993, Vol.325, Article 493

1993

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Competing Kinetic and Thermodynamic Processes in the Growth and Ordering of Ga 0.5 In 0.5 P

MRS proceedings, 1993, Vol.312, Article 83

1993

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Optical Detection of Band Gap Variations Due to Ordering in Ga0.47In0.53As on InP

MRS proceedings, 1992, Vol.281

1992

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Optical Detection of Band Gap Variations Due to Ordering in Ga 0.47 In 0.53 As on InP

MRS proceedings, 1992, Vol.281, Article 67

1992

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Photoelectron Angular Distributions Of Ultrathin NI/CU(001) Films

Structural and Electrical Characterization of Highly Tetrahedral-Coordinated Diamond-Like Carbon Films Grown by Pulsed-Laser Deposition

The Growth and Optimization of InPSb/InGaAs/InAsSb Strained-Layer Superlattice Emitters by Metal Organic Chemical Vapor Deposition

Quantum-Confined Stark Effect and Polarization Field in Single Quantum Well InGaN/GaN LEDs

Characterization of a Dominant Electron Trap in GaNAs Using Deep-Level Transient Spectroscopy

Characterization of Minority-Carrier Hole Transport in Nitride-Based Light-Emitting Diodes with Optical and Electrical Time-Resolved Techniques

Advances in AlGaN-based Deep UV LEDs

The Growth of InAsSb/InAs/InPSb/InAs Mid-Infrared Emitters by Metal-Organic Chemical Vapor Deposition

Determination of AlGaN/GaN HFET Electric Fields using Electroreflectance

The Role of Nitrogen-Induced Localization and Defects in InGaAsN (? 2% N): Comparison of InGaAsN Grown by Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

Development of Infrared Detectors Based on Type II, InAsSb Strained-Layer Superlattices

Preparation of AlAsSb and Mid-Infrared (3–5μm) Lasers By Metal-Organic Chemical Vapor Deposition

Novel Mid-Infrared Lasers with Compressively Strained InAsSb Active Regions

Time-Resolved Photoluminescence Studies of InxGa1−xAs1−yNy

Time-Resolved Photoluminescence Studies of In x Ga 1−x As 1−y N y

Recent Progress in the Growth of Mid-ir Emitters by Metalorganic Chemical Vapor Deposition

Deep Level Defect Studies in Mocvd-Grown In x Ga 1−s As 1−y N y Films Lattice-Matched to GaAs

Deep Level Defect Studies in Mocvd-Grown InxGa1−sAs1−yNy Films Lattice-Matched to GaAs

Advanced Dielectrics for Passivation of INSB

The Effect of Phosphine Pressure on the Band Gap of Ga 0.5 In 0.5 P

Determination of the Order Parameter by Quantitative Tem Techniques

The Growth of InAsSb/InGaAs Strained-Layer Superlattices by Metal-Organic Chemical Vapor Deposition

Competing Kinetic and Thermodynamic Processes in the Growth and Ordering of Ga 0.5 In 0.5 P

Optical Detection of Band Gap Variations Due to Ordering in Ga0.47In0.53As on InP

Optical Detection of Band Gap Variations Due to Ordering in Ga 0.47 In 0.53 As on InP

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