UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

The effect of micromachining with focused ion beams on the life and power output of AlGaAs TJS lasers

Microelectronic engineering, 1989, Vol.9 (1), p.281-283

1989

Volltextzugriff (PDF)

E-beam induced X-ray mask repair with optimized gas nozzle geometry

Microelectronic engineering, 1991-01, Vol.13 (1-4), p.279-282

1991

Volltextzugriff (PDF)

Investigation of the process latitude for sub-half-micron pattern replication in X-ray lithography

Microelectronic engineering, 1991-03, Vol.13 (1-4), p.339-342

1991

Volltextzugriff (PDF)

Profile abnormality in a chemical amplification resist system

Microelectronic engineering, 1991-03, Vol.13 (1-4), p.65-68

1991

Volltextzugriff (PDF)

Evaluation of an advanced submicron X-ray stepper (XRS 200): Pattern transfer and alignment accuracy

Microelectronic engineering, 1991-01, Vol.13 (1-4), p.309-314

1991

Volltextzugriff (PDF)

Performance optimization of the chemically amplified radiation resist RAY-PF

Microelectronic engineering, 1991-01, Vol.13 (1-4), p.73-78

1991

Volltextzugriff (PDF)

Submicrometer photolithography by surface imaging - experiment and simulation

Microelectronic engineering, 1991-03, Vol.13 (1-4), p.89-92

1991

Volltextzugriff (PDF)

A novel silicon containing chemical amplification resist for electron beam lithography

Microelectronic engineering, 1991-01, Vol.13 (1-4), p.69-72

1991

Volltextzugriff (PDF)

Status of the compact synchrotron radiation source cosy and first exposure experiments

Microelectronic engineering, 1991-03, Vol.13 (1-4), p.291-294

1991

Volltextzugriff (PDF)

Repair of opaque X-ray mask defects: Application and resolution

Microelectronic engineering, 1991-01, Vol.13 (1-4), p.275-278

1991

Volltextzugriff (PDF)

Acid hardenable, spin-coatable silicon ladder polymer systems as resist materials

Microelectronic engineering, 1991-01, Vol.13 (1-4), p.61-64

1991

Volltextzugriff (PDF)

Computer aided proximity correction for direct write E-beam lithography

Microelectronic engineering, 1991-01, Vol.13 (1-4), p.181-184

1991

Volltextzugriff (PDF)

Self-aligned phase shifting mask for contact hole fabrication

Microelectronic engineering, 1991-01, Vol.13 (1-4), p.131-134

1991

Volltextzugriff (PDF)

The electron beam proximity printing lithography, a candidate for the 0.35 and 0.25 micron chip generations

Microelectronic engineering, 1991-03, Vol.13 (1-4), p.361-364

1991

Volltextzugriff (PDF)

Laser photoetching of doped poly(tetrafluoroethylene), substituted-PTFE, and polyimide films

Microelectronic engineering, 1991-03, Vol.13 (1-4), p.429-432

1991

Volltextzugriff (PDF)

A 0,25μm NMOS transistor fabricated with X-ray lithography

Microelectronic engineering, 1991-01, Vol.13 (1-4), p.319-322

1991

Volltextzugriff (PDF)

X-ray masks with large-area 100nm-period gratings for quantum-effect device applications

Microelectronic engineering, 1991-01, Vol.13 (1-4), p.271-274

1991

Volltextzugriff (PDF)

Dry development of the DESIRE process in a DECR reactor

Microelectronic engineering, 1991-03, Vol.13 (1-4), p.455-458

1991

Volltextzugriff (PDF)

The role of self diffusion in the dry development and plasma durability of polymers

Microelectronic engineering, 1991-03, Vol.13 (1-4), p.57-60

1991

Volltextzugriff (PDF)

Lithographic performance of an EL-3 system at 0.25μm groundrules

Microelectronic engineering, 1991-01, Vol.13 (1-4), p.151-156

1991

Volltextzugriff (PDF)

Mix-and-match EBP/optical lithography of 1 Mbit chips

Microelectronic engineering, 1991-01, Vol.13 (1-4), p.357-360

1991

Volltextzugriff (PDF)

Ultrasensitive chemically amplified resist systems

Microelectronic engineering, 1991-01, Vol.13 (1-4), p.19-22

1991

Volltextzugriff (PDF)

Fabrication of quantum wires and point contacts in GaAs/AlGaAs heterostructures using focused ion beam implanted gates

Microelectronic engineering, 1991-01, Vol.13 (1-4), p.373-376

1991

Volltextzugriff (PDF)

Comparison of double and single recessed 0.15μm gate length δ doped AlGaAs/GaAs TEGFETs

Microelectronic engineering, 1991-01, Vol.13 (1-4), p.381-384

1991

Volltextzugriff (PDF)

Thickness inhomogeneity during silicon X-ray mask membrane fabrication: Generation and prevention

Microelectronic engineering, 1991-01, Vol.13 (1-4), p.267-270

1991

Volltextzugriff (PDF)

1 – 25 von 38

Suche als RSS-Feed

Aktive Filter

Zeitschrift / SerieMicroelectronic Engineering

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(38)
Mit Volltextzugriff
(38)

Publikationsform

Artikel
(38)

Sprache

Englisch
(38)

Erscheinungsjahr

n.n

Kollektion

Zeitschrift / Serie

Microelectronic Engineering, Vol 13
(33)

Menü

Weitere Dienste

Einstellungen

The effect of micromachining with focused ion beams on the life and power output of AlGaAs TJS lasers

E-beam induced X-ray mask repair with optimized gas nozzle geometry

Investigation of the process latitude for sub-half-micron pattern replication in X-ray lithography

Profile abnormality in a chemical amplification resist system

Evaluation of an advanced submicron X-ray stepper (XRS 200): Pattern transfer and alignment accuracy

Performance optimization of the chemically amplified radiation resist RAY-PF

Submicrometer photolithography by surface imaging - experiment and simulation

A novel silicon containing chemical amplification resist for electron beam lithography

Status of the compact synchrotron radiation source cosy and first exposure experiments

Repair of opaque X-ray mask defects: Application and resolution

Acid hardenable, spin-coatable silicon ladder polymer systems as resist materials

Computer aided proximity correction for direct write E-beam lithography

Self-aligned phase shifting mask for contact hole fabrication

The electron beam proximity printing lithography, a candidate for the 0.35 and 0.25 micron chip generations

Laser photoetching of doped poly(tetrafluoroethylene), substituted-PTFE, and polyimide films

A 0,25μm NMOS transistor fabricated with X-ray lithography

X-ray masks with large-area 100nm-period gratings for quantum-effect device applications

Dry development of the DESIRE process in a DECR reactor

The role of self diffusion in the dry development and plasma durability of polymers

Lithographic performance of an EL-3 system at 0.25μm groundrules

Mix-and-match EBP/optical lithography of 1 Mbit chips

Ultrasensitive chemically amplified resist systems

Fabrication of quantum wires and point contacts in GaAs/AlGaAs heterostructures using focused ion beam implanted gates

Comparison of double and single recessed 0.15μm gate length δ doped AlGaAs/GaAs TEGFETs

Thickness inhomogeneity during silicon X-ray mask membrane fabrication: Generation and prevention

Aktive Filter

Suchergebnisse filtern