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Influence of thermal annealing on the charge generation and transport in PM6-based non-fullerene solar cells

Journal of materials science. Materials in electronics, 2021-09, Vol.32 (18), p.22879-22889

2021

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The lattice distortion of β-Ga2O3 film grown on c-plane sapphire

Journal of materials science. Materials in electronics, 2015-05, Vol.26 (5), p.3231-3235

2015

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Low resistivity ohmic contacts on lightly doped n-type β-Ga2O3 using Mg/Au

Journal of materials science. Materials in electronics, 2019-02, Vol.30 (4), p.3860-3864

2019

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Improvement of crystal quality and UV transparence of dielectric Ga2O3 thin films via thermal annealing in N2 atmosphere

Journal of materials science. Materials in electronics, 2012, Vol.23 (2), p.542-545

2012

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Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer

Journal of materials science. Materials in electronics, 2013-08, Vol.24 (8), p.2923-2927

2013

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Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal

Journal of materials science. Materials in electronics, 2013-08, Vol.24 (8), p.2750-2754

2013

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Synthesis of GaN network by nitridation of hexagonal ε-Ga2O3 film

Journal of materials science. Materials in electronics, 2017-02, Vol.28 (3), p.2598-2601

2017

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Influence of Cu dopant on the structure and optical properties of ZnO thin films prepared by MOCVD

Journal of materials science. Materials in electronics, 2015-03, Vol.26 (3), p.1591-1596

2015

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Synthesis of GaN network by nitridation of hexagonal [epsilon]-Ga^sub 2^O3 film

Journal of materials science. Materials in electronics, 2017-02, Vol.28 (3), p.2598

2017

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Synthesis of GaN network by nitridation of hexagonal epsilon -Ga sub(2)O sub(3) film

Journal of materials science. Materials in electronics, 2017-02, Vol.28 (3), p.2598-2601

2017

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Improved quality of GaN epilayer grown on porous SiC substrate by in situ H2 pre-treatment

Journal of materials science. Materials in electronics, 2013-09, Vol.24 (9), p.3299-3302

2013

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The lattice distortion of [beta]-Ga^sub 2^O3 film grown on c-plane sapphire

Journal of materials science. Materials in electronics, 2015-05, Vol.26 (5), p.3231

2015

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The lattice distortion of beta -Ga sub(2)O sub(3) film grown on c-plane sapphire

Journal of materials science. Materials in electronics, 2015-05, Vol.26 (5), p.3231-3235

2015

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Band gap broadening and photoluminescence properties investigation in Ga sub(2)O sub(3) polycrystal

Journal of materials science. Materials in electronics, 2013-08, Vol.24 (8), p.2750-2754

2013

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Band gap broadening and photoluminescence properties investigation in Ga^sub 2^O3 polycrystal

Journal of materials science. Materials in electronics, 2013-08, Vol.24 (8), p.2750

2013

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Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiN sub(x) interlayer

Journal of materials science. Materials in electronics, 2013-08, Vol.24 (8), p.2923-2927

2013

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Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiN^sub x^ interlayer

Journal of materials science. Materials in electronics, 2013-08, Vol.24 (8), p.2923

2013

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The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition

Journal of materials science. Materials in electronics, 2014-10, Vol.25 (10), p.4268-4272

2014

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Improving the quality of GaN epilayer by preparing a novel patterned sapphire substrate

Journal of materials science. Materials in electronics, 2014, Vol.25 (1), p.267-272

2014

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Improved quality of GaN epilayer grown on porous SiC substrate by in situ H sub(2) pre-treatment

Journal of materials science. Materials in electronics, 2013-09, Vol.24 (9), p.3299-3302

2013

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Improvement of crystal quality and UV transparence of dielectric Ga^sub 2^O3 thin films via thermal annealing in N2 atmosphere

Journal of materials science. Materials in electronics, 2012-02, Vol.23 (2), p.542

2012

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Improvement of crystal quality and UV transparence of dielectric Ga sub(2)O sub(3) thin films via thermal annealing in N sub(2) atmosphere

Journal of materials science. Materials in electronics, 2012-02, Vol.23 (2), p.542-545

2012

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Influence of thermal annealing on the charge generation and transport in PM6-based non-fullerene solar cells

The lattice distortion of β-Ga2O3 film grown on c-plane sapphire

Low resistivity ohmic contacts on lightly doped n-type β-Ga2O3 using Mg/Au

Improvement of crystal quality and UV transparence of dielectric Ga2O3 thin films via thermal annealing in N2 atmosphere

Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer

Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal

Synthesis of GaN network by nitridation of hexagonal ε-Ga2O3 film

Influence of Cu dopant on the structure and optical properties of ZnO thin films prepared by MOCVD

Synthesis of GaN network by nitridation of hexagonal [epsilon]-Ga^sub 2^O3 film

Synthesis of GaN network by nitridation of hexagonal epsilon -Ga sub(2)O sub(3) film

Improved quality of GaN epilayer grown on porous SiC substrate by in situ H2 pre-treatment

The lattice distortion of [beta]-Ga^sub 2^O3 film grown on c-plane sapphire

The lattice distortion of beta -Ga sub(2)O sub(3) film grown on c-plane sapphire

Band gap broadening and photoluminescence properties investigation in Ga sub(2)O sub(3) polycrystal

Band gap broadening and photoluminescence properties investigation in Ga^sub 2^O3 polycrystal

Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiN sub(x) interlayer

Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiN^sub x^ interlayer

The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition

Improving the quality of GaN epilayer by preparing a novel patterned sapphire substrate

Improved quality of GaN epilayer grown on porous SiC substrate by in situ H sub(2) pre-treatment

Improvement of crystal quality and UV transparence of dielectric Ga^sub 2^O3 thin films via thermal annealing in N2 atmosphere

Improvement of crystal quality and UV transparence of dielectric Ga sub(2)O sub(3) thin films via thermal annealing in N sub(2) atmosphere

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