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Growth and characterization of the nonlinear optical single crystal: l-lysine acetate

Journal of crystal growth, 2008-05, Vol.310 (11), p.2842-2847

2008

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Preparation, crystal growth, characterization, thermal and third-order nonlinear optical properties of ethyltriphenylphosphonium bis(2-thioxo-1,3-dithiole-4,5-dithiolato)aurate(III) for all-optical switching

Journal of crystal growth, 2011-06, Vol.324 (1), p.124-129

2011

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Nucleation kinetics, micro-crystallization and surface morphology studies of the nonlinear optical single-crystal l-lysinium trifluoroacetate

Journal of crystal growth, 2009-06, Vol.311 (13), p.3455-3460

2009

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Erratum to “Nucleation kinetics, micro-crystallization and surface morphology studies of the nonlinear optical single crystal l-lysinium trifluoroacetate” [Journal of Crystal Growth] 311/13 (2009)

Journal of crystal growth, 2009-08, Vol.311 (16), p.4152-4152

2009

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Influence of crystal perfection on the reverse leakage current of the SiGe/Si p–n heterojunction diodes

Journal of crystal growth, 1999-05, Vol.201, p.551-555

1999

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The effect of In content on high-density In x Ga 1− x As quantum dots

Journal of crystal growth, 2005, Vol.282 (1), p.173-178

2005

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Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy

Journal of crystal growth, 2000-12, Vol.220 (4), p.461-465

2000

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The effect of In content on high-density InxGa1-xAs quantum dots

Journal of crystal growth, 2005-08, Vol.282 (1-2), p.173-178

2005

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Structural properties and Raman measurement of AlN films grown on Si (111) by NH3-GSMBE

Journal of crystal growth, 2002-10, Vol.244 (3-4), p.229-235

2002

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Structural properties and Raman measurement of AlN films grown on Si (1 1 1) by NH 3-GSMBE

Journal of crystal growth, 2002, Vol.244 (3), p.229-235

2002

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Epitaxial growth and characterization of SiC on C-plane sapphire substrates by ammonia nitridation

Journal of crystal growth, 2003-02, Vol.249 (1), p.1-8

2003

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Growth of SiGe heterojunction bipolar transistor using Si 2H 6 gas and Ge solid sources molecular beam epitaxy

Journal of crystal growth, 2001, Vol.223 (4), p.489-493

2001

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High-quality GaN grown by gas-source MBE

Journal of crystal growth, 2001-07, Vol.227, p.386-389

2001

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Epitaxial growth of SiC on complex substrates

Journal of crystal growth, 2001-07, Vol.227, p.811-815

2001

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Homoepitaxial growth and device characteristics of SiC on Si-face (0 0 0 1) 6H–SiC

Journal of crystal growth, 2001-07, Vol.227, p.816-819

2001

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Changing the size and shape of Ge island by chemical etching

Journal of crystal growth, 2001-09, Vol.231 (1), p.17-21

2001

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Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability

Journal of crystal growth, 2001-07, Vol.227, p.766-769

2001

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Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy

Journal of crystal growth, 2001-03, Vol.223 (4), p.489-493

2001

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Growth and characterization of the nonlinear optical single crystal: l-lysine acetate

Preparation, crystal growth, characterization, thermal and third-order nonlinear optical properties of ethyltriphenylphosphonium bis(2-thioxo-1,3-dithiole-4,5-dithiolato)aurate(III) for all-optical switching

Nucleation kinetics, micro-crystallization and surface morphology studies of the nonlinear optical single-crystal l-lysinium trifluoroacetate

Erratum to “Nucleation kinetics, micro-crystallization and surface morphology studies of the nonlinear optical single crystal l-lysinium trifluoroacetate” [Journal of Crystal Growth] 311/13 (2009)

Influence of crystal perfection on the reverse leakage current of the SiGe/Si p–n heterojunction diodes

The effect of In content on high-density In x Ga 1− x As quantum dots

Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy

The effect of In content on high-density InxGa1-xAs quantum dots

Structural properties and Raman measurement of AlN films grown on Si (111) by NH3-GSMBE

Structural properties and Raman measurement of AlN films grown on Si (1 1 1) by NH 3-GSMBE

Epitaxial growth and characterization of SiC on C-plane sapphire substrates by ammonia nitridation

Growth of SiGe heterojunction bipolar transistor using Si 2H 6 gas and Ge solid sources molecular beam epitaxy

High-quality GaN grown by gas-source MBE

Epitaxial growth of SiC on complex substrates

Homoepitaxial growth and device characteristics of SiC on Si-face (0 0 0 1) 6H–SiC

Changing the size and shape of Ge island by chemical etching

Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability

Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy

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