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GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3 – In comparison with atomic layer deposited Al2O3

Journal of crystal growth, 2017-11, Vol.477, p.179-182

2017

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Effective surface passivation of In0.53Ga0.47As(001) using molecular beam epitaxy and atomic layer deposited HfO2 – A comparative study

Journal of crystal growth, 2017-11, Vol.477, p.159-163

2017

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Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y2O3 on Ge

Journal of crystal growth, 2009-03, Vol.311 (7), p.2195-2198

2009

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Epitaxial stabilization of a monoclinic phase in Y2O3 films on c-plane GaN

Journal of crystal growth, 2011-05, Vol.323 (1), p.107-110

2011

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Molecular beam epitaxy-grown Al2O3/HfO2 high-κ dielectrics for germanium

Journal of crystal growth, 2009-03, Vol.311 (7), p.2187-2190

2009

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GaN on Si with nm-thick single-crystal Sc2O3 as a template using molecular beam epitaxy

Journal of crystal growth, 2009-03, Vol.311 (7), p.2006-2009

2009

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GaN on Si with nm-thick single-crystal Sc 2O 3 as a template using molecular beam epitaxy

Journal of crystal growth, 2009, Vol.311 (7), p.2006-2009

2009

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MBE—Enabling technology beyond Si CMOS

Journal of crystal growth, 2011-05, Vol.323 (1), p.511-517

2011

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Molecular beam epitaxy-grown Al 2O 3/HfO 2 high-κ dielectrics for germanium

Journal of crystal growth, 2009, Vol.311 (7), p.2187-2190

2009

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Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y 2O 3 on Ge

Journal of crystal growth, 2009, Vol.311 (7), p.2195-2198

2009

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MBE-grown high κ gate dielectrics of HfO 2 and (Hf–Al)O 2 for Si and III–V semiconductors nano-electronics

Journal of crystal growth, 2005-05, Vol.278 (1), p.619-623

2005

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A novel approach of using a MBE template for ALD growth of high- κ dielectrics

Journal of crystal growth, 2007-04, Vol.301, p.378-380

2007

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MBE-grown high gate dielectrics of HfO2 and (Hf–Al)O2 for Si and III–V semiconductors nano-electronics

Journal of crystal growth, 2005-05, Vol.278 (1-4), p.619-623

2005

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Grain control in directional solidification of photovoltaic silicon

Journal of crystal growth, 2012-12, Vol.360, p.68-75

2012

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Photoluminescence properties of MgxZn1−xO films grown by molecular beam epitaxy

Journal of crystal growth, 2017-02, Vol.459, p.13-16

2017

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The study of self-assembled ZnO nanorods grown on Si(111) by plasma-assisted molecular beam epitaxy

Journal of crystal growth, 2013-09, Vol.378, p.466-469

2013

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Growth and optical properties of high-density InN nanodots

Journal of crystal growth, 2010-10, Vol.312 (21), p.3209-3213

2010

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Mg incorporation in GaN grown by plasma-assisted molecular beam epitaxy at high temperatures

Journal of crystal growth, 2016-04, Vol.439, p.87-92

2016

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Optical characterization of isoelectronic ZnSe1−O semiconductors

Journal of crystal growth, 2011-05, Vol.323 (1), p.122-126

2011

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Thermal-activated carrier transfer in ZnCdO thin film grown by plasma-assisted molecular beam epitaxy

Journal of crystal growth, 2013-09, Vol.378, p.208-211

2013

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Optical characterization of isoelectronic ZnSe1−xOx semiconductors

Journal of crystal growth, 2011-05, Vol.323 (1), p.122-126

2011

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On the hot-zone design of Czochralski silicon growth for photovoltaic applications

Journal of crystal growth, 2004-02, Vol.261 (4), p.433-443

2004

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Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial film

Journal of crystal growth, 2011-05, Vol.323 (1), p.372-375

2011

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Improvement of luminescence from Si nanocrystals with thermal annealing in CO 2

Journal of crystal growth, 2008, Vol.310 (2), p.313-317

2008

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Simulation of boron effects on OISF-ring dynamics for Czochralski silicon growth: a comparative study

Journal of crystal growth, 2004-05, Vol.266 (1), p.132-139

2004

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GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3 – In comparison with atomic layer deposited Al2O3

Effective surface passivation of In0.53Ga0.47As(001) using molecular beam epitaxy and atomic layer deposited HfO2 – A comparative study

Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y2O3 on Ge

Epitaxial stabilization of a monoclinic phase in Y2O3 films on c-plane GaN

Molecular beam epitaxy-grown Al2O3/HfO2 high-κ dielectrics for germanium

GaN on Si with nm-thick single-crystal Sc2O3 as a template using molecular beam epitaxy

GaN on Si with nm-thick single-crystal Sc 2O 3 as a template using molecular beam epitaxy

MBE—Enabling technology beyond Si CMOS

Molecular beam epitaxy-grown Al 2O 3/HfO 2 high-κ dielectrics for germanium

Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y 2O 3 on Ge

MBE-grown high κ gate dielectrics of HfO 2 and (Hf–Al)O 2 for Si and III–V semiconductors nano-electronics

A novel approach of using a MBE template for ALD growth of high- κ dielectrics

MBE-grown high gate dielectrics of HfO2 and (Hf–Al)O2 for Si and III–V semiconductors nano-electronics

Grain control in directional solidification of photovoltaic silicon

Photoluminescence properties of MgxZn1−xO films grown by molecular beam epitaxy

The study of self-assembled ZnO nanorods grown on Si(111) by plasma-assisted molecular beam epitaxy

Growth and optical properties of high-density InN nanodots

Mg incorporation in GaN grown by plasma-assisted molecular beam epitaxy at high temperatures

Optical characterization of isoelectronic ZnSe1−O semiconductors

Thermal-activated carrier transfer in ZnCdO thin film grown by plasma-assisted molecular beam epitaxy

Optical characterization of isoelectronic ZnSe1−xOx semiconductors

On the hot-zone design of Czochralski silicon growth for photovoltaic applications

Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial film

Improvement of luminescence from Si nanocrystals with thermal annealing in CO 2

Simulation of boron effects on OISF-ring dynamics for Czochralski silicon growth: a comparative study

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