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A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques

Journal of applied physics, 2019-09, Vol.126 (12)

2019

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Modeling and analysis of intraband absorption in quantum-dot-in-well mid-infrared photodetectors

Journal of applied physics, 2012-02, Vol.111 (3), p.033713-033713-6

2012

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Impact ionization in submicron silicon devices

Journal of applied physics, 2004-05, Vol.95 (10), p.5931-5933

2004

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Treatment of soft threshold in impact ionization

Journal of applied physics, 2001-09, Vol.90 (5), p.2538-2543

2001

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Modeling of avalanche multiplication and excess noise factor in In0.52Al0.48As avalanche photodiodes using a simple Monte Carlo model

Journal of applied physics, 2008-07, Vol.104 (1)

2008

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Modeling of avalanche multiplication and excess noise factor in In 0.52 Al 0.48 As avalanche photodiodes using a simple Monte Carlo model

Journal of applied physics, 2008-07, Vol.104 (1), p.013114-013114-6

2008

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Thickness measurements for ultrathin-film insulator metal–oxide–semiconductor structures using Fowler–Nordheim tunneling current oscillations

Journal of applied physics, 2000-12, Vol.88 (11), p.6560-6563

2000

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Field-assisted thermally stimulated current of mobile ions in a dielectric layer of a metal–oxide–semiconductor structure

Journal of applied physics, 1983-01, Vol.54 (8), p.4398-4404

1983

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Oxide trap relaxation spectroscopy: A new difference method to determine trap in oxidized silicon

Journal of applied physics, 1995-03, Vol.77 (6), p.2576-2581

1995

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Calculations of resonant tunneling levels across arbitrary potential barriers

Journal of applied physics, 1992-11, Vol.72 (10), p.4972-4974

1992

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Unusual energy state evolution in Ce-based metallic glass under high pressure

Journal of applied physics, 2017-05, Vol.121 (20)

2017

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Magnetron-sputter deposition of high-indium-content n -AlInN thin film on p -Si(001) substrate for photovoltaic applications

Journal of applied physics, 2012-09, Vol.112 (6)

2012

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Quantum confinement of excitons in wurtzite InP nanowires

Journal of applied physics, 2015-05, Vol.117 (19)

2015

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Origin of stress in radio frequency magnetron sputtered zinc oxide thin films

Journal of applied physics, 2011-03, Vol.109 (6), p.064905-064905-6

2011

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Hamiltonian adaptive resolution molecular dynamics simulation of infrared dielectric functions of liquids

Journal of applied physics, 2018-05, Vol.123 (20)

2018

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Crystallographically tilted and partially strain relaxed GaN grown on inclined {111} facets etched on Si(100) substrate

Journal of applied physics, 2013-12, Vol.114 (24)

2013

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Optical and electrical properties of direct-current magnetron sputtered ZnO:Al films

Journal of applied physics, 2001-10, Vol.90 (7), p.3432-3436

2001

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Correlation between internal states and creep resistance in metallic glass thin films

Journal of applied physics, 2021-02, Vol.129 (8)

2021

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A study of terahertz quantum cascade lasers: Experiment versus simulation

Journal of applied physics, 2008-08, Vol.104 (4), p.043101-043101-5

2008

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Effect of magnetostatic energy on domain structure and magnetization reversal in (Co/Pd) multilayers

Journal of applied physics, 2010-05, Vol.107 (10), p.103901-103901-5

2010

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The effect of microcavity laser recombination lifetime on microwave bandwidth and eye-diagram signal integrity

Journal of applied physics, 2011-03, Vol.109 (5), p.053112-053112-9

2011

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Magnetic and magnetodielectric properties of erbium iron garnet ceramic

Journal of applied physics, 2013-01, Vol.113 (3)

2013

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InGaAs quantum dots grown with GaP strain compensation layers

Journal of applied physics, 2004-05, Vol.95 (10), p.5710-5714

2004

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Photoconductive response correction for detectors of terahertz radiation

Journal of applied physics, 2008-09, Vol.104 (5), p.053113-053113-7

2008

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Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si

Journal of applied physics, 2009-10, Vol.106 (8), p.083514-083514-4

2009

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A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques

Modeling and analysis of intraband absorption in quantum-dot-in-well mid-infrared photodetectors

Impact ionization in submicron silicon devices

Treatment of soft threshold in impact ionization

Modeling of avalanche multiplication and excess noise factor in In0.52Al0.48As avalanche photodiodes using a simple Monte Carlo model

Modeling of avalanche multiplication and excess noise factor in In 0.52 Al 0.48 As avalanche photodiodes using a simple Monte Carlo model

Thickness measurements for ultrathin-film insulator metal–oxide–semiconductor structures using Fowler–Nordheim tunneling current oscillations

Field-assisted thermally stimulated current of mobile ions in a dielectric layer of a metal–oxide–semiconductor structure

Oxide trap relaxation spectroscopy: A new difference method to determine trap in oxidized silicon

Calculations of resonant tunneling levels across arbitrary potential barriers

Unusual energy state evolution in Ce-based metallic glass under high pressure

Magnetron-sputter deposition of high-indium-content n -AlInN thin film on p -Si(001) substrate for photovoltaic applications

Quantum confinement of excitons in wurtzite InP nanowires

Origin of stress in radio frequency magnetron sputtered zinc oxide thin films

Hamiltonian adaptive resolution molecular dynamics simulation of infrared dielectric functions of liquids

Crystallographically tilted and partially strain relaxed GaN grown on inclined {111} facets etched on Si(100) substrate

Optical and electrical properties of direct-current magnetron sputtered ZnO:Al films

Correlation between internal states and creep resistance in metallic glass thin films

A study of terahertz quantum cascade lasers: Experiment versus simulation

Effect of magnetostatic energy on domain structure and magnetization reversal in (Co/Pd) multilayers

The effect of microcavity laser recombination lifetime on microwave bandwidth and eye-diagram signal integrity

Magnetic and magnetodielectric properties of erbium iron garnet ceramic

InGaAs quantum dots grown with GaP strain compensation layers

Photoconductive response correction for detectors of terahertz radiation

Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si

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