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Topological valley crystals in a photonic Su–Schrieffer–Heeger (SSH) variant

Journal of applied physics, 2022-10, Vol.132 (16)

2022

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Nonvolatile memory based on the extension–retraction of bent ferroelastic domain walls: A phase field simulation

Journal of applied physics, 2023-05, Vol.133 (20)

2023

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The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance

Journal of applied physics, 2012-12, Vol.112 (12)

2012

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Controlled polarity of sputter-deposited aluminum nitride on metals observed by aberration corrected scanning transmission electron microscopy

Journal of applied physics, 2013-02, Vol.113 (8)

2013

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Influence of oxygen vacancy on the electronic structure of CaCu3Ti4O12 and its deep-level vacancy trap states by first-principle calculation

Journal of applied physics, 2012-03, Vol.111 (6)

2012

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Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals

Journal of applied physics, 1998-08, Vol.84 (4), p.2358-2360

1998

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Flux distribution in Fe-based superconducting materials by magneto-optical imaging

Journal of applied physics, 2012-04, Vol.111 (7), p.07E143-07E143-3

2012

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Modeling of polar nanoregions dynamics on the dielectric response of relaxors

Journal of applied physics, 2013-06, Vol.113 (22)

2013

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Synthesis and physical properties of FeSe1/2Te1/2 superconductor

Journal of applied physics, 2010-05, Vol.107 (9)

2010

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Properties of carbon ion deposited tetrahedral amorphous carbon films as a function of ion energy

Journal of applied physics, 1996-05, Vol.79 (9), p.7234-7240

1996

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Liver cancer immunoassay with magnetic nanoparticles and MgO-based magnetic tunnel junction sensors

Journal of applied physics, 2012-04, Vol.111 (7), p.07E505-07E505-3

2012

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Cluster size and composition variations in yellow and red light-emitting InGaN thin films upon thermal annealing

Journal of applied physics, 2004-05, Vol.95 (10), p.5388-5396

2004

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Temperature dependence of the Raman spectra of carbon nanotubes

Journal of applied physics, 1998-10, Vol.84 (7), p.4022-4024

1998

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Fe3+ doping effects on the structure and multiferroicity of Fe1+ x V2− x O4 (0 ≤ x ≤ 0.4) spinels

Journal of applied physics, 2012-06, Vol.111 (12)

2012

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Surface reactivity of Si nanowires

Journal of applied physics, 2001-06, Vol.89 (11), p.6396-6399

2001

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Thermal diffusion of nitrogen into ZnO film deposited on InN/sapphire substrate by metal organic chemical vapor deposition

Journal of applied physics, 2011-12, Vol.110 (11), p.113509-113509-4

2011

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Influence of the electronic states anisotropy on the band gap pressure coefficient of InxGa1−xN alloys

Journal of applied physics, 2009-12, Vol.106 (11)

2009

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Properties and structures of diamond-like carbon film deposited using He, Ne, Ar/methane mixture by plasma enhanced chemical vapor deposition

Journal of applied physics, 2000-06, Vol.87 (11), p.8122-8131

2000

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Series operation of direct current xenon chloride excimer sources

Journal of applied physics, 2000-09, Vol.88 (6), p.3220-3224

2000

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Influence of the electronic states anisotropy on the band gap pressure coefficient of In x Ga 1 − x N alloys

Journal of applied physics, 2009-12, Vol.106 (11), p.113511-113511-4

2009

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Micro-Raman spectroscopic analysis of tetrahedral amorphous carbon films deposited under varying conditions

Journal of applied physics, 1999-12, Vol.86 (11), p.6078-6083

1999

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Monomode optical waveguide in lithium niobate formed by MeV Si+ ion implantation

Journal of applied physics, 2001-05, Vol.89 (9), p.5224-5226

2001

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Influence of oxygen vacancy on the electronic structure of CaCu 3 Ti 4 O 12 and its deep-level vacancy trap states by first-principle calculation

Journal of applied physics, 2012-03, Vol.111 (6), p.063713-063713-8

2012

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Nonvolatile phase change memory nanocell fabrication by femtosecond laser writing assisted with near-field optical microscopy

Journal of applied physics, 2005-12, Vol.98 (12), p.124313-124313-6

2005

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Spectroscopic and electrical properties of atomic layer deposition Al2O3 gate dielectric on surface pretreated Si substrate

Journal of applied physics, 2006-04, Vol.99 (7)

2006

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Topological valley crystals in a photonic Su–Schrieffer–Heeger (SSH) variant

Nonvolatile memory based on the extension–retraction of bent ferroelastic domain walls: A phase field simulation

The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance

Controlled polarity of sputter-deposited aluminum nitride on metals observed by aberration corrected scanning transmission electron microscopy

Influence of oxygen vacancy on the electronic structure of CaCu3Ti4O12 and its deep-level vacancy trap states by first-principle calculation

Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals

Flux distribution in Fe-based superconducting materials by magneto-optical imaging

Modeling of polar nanoregions dynamics on the dielectric response of relaxors

Synthesis and physical properties of FeSe1/2Te1/2 superconductor

Properties of carbon ion deposited tetrahedral amorphous carbon films as a function of ion energy

Liver cancer immunoassay with magnetic nanoparticles and MgO-based magnetic tunnel junction sensors

Cluster size and composition variations in yellow and red light-emitting InGaN thin films upon thermal annealing

Temperature dependence of the Raman spectra of carbon nanotubes

Fe3+ doping effects on the structure and multiferroicity of Fe1+ x V2− x O4 (0 ≤ x ≤ 0.4) spinels

Surface reactivity of Si nanowires

Thermal diffusion of nitrogen into ZnO film deposited on InN/sapphire substrate by metal organic chemical vapor deposition

Influence of the electronic states anisotropy on the band gap pressure coefficient of InxGa1−xN alloys

Properties and structures of diamond-like carbon film deposited using He, Ne, Ar/methane mixture by plasma enhanced chemical vapor deposition

Series operation of direct current xenon chloride excimer sources

Influence of the electronic states anisotropy on the band gap pressure coefficient of In x Ga 1 − x N alloys

Micro-Raman spectroscopic analysis of tetrahedral amorphous carbon films deposited under varying conditions

Monomode optical waveguide in lithium niobate formed by MeV Si+ ion implantation

Influence of oxygen vacancy on the electronic structure of CaCu 3 Ti 4 O 12 and its deep-level vacancy trap states by first-principle calculation

Nonvolatile phase change memory nanocell fabrication by femtosecond laser writing assisted with near-field optical microscopy

Spectroscopic and electrical properties of atomic layer deposition Al2O3 gate dielectric on surface pretreated Si substrate

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