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Broad-band conductive spectra of polypropylene oxide complexed with LiClO4

Japanese journal of applied physics, 1997, Vol.36 (3A), p.1119-1125

1997

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Three-dimensional Ultrasound Image Presentation on an Immersive Projection System

Japanese Journal of Applied Physics, 2002-05, Vol.41 (Part 1, No. 5B), p.3590-3591

2002

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Microstructure of Fe-B-Si Alloy Surface Layers Produced by Laser-Quenching

JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE, 1992-12, Vol.31 (12A), p.3940-3945

1992

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Direct observation of crystallization process from amorphous Y-Ba-Cu-O film by means of optical microscopy

Japanese Journal of Applied Physics, 1993-05, Vol.32 (5A), p.1940-1945

1993

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High-speed etching of indium-tin-oxide thin films using an inductively coupled plasma

Japanese Journal of Applied Physics, 1994, Vol.33 (7B), p.4438-4441

1994

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Reflectance spectra of BN materials in the vacuum ultraviolet

Japanese Journal of Applied Physics, 1988-03, Vol.27 (3), p.440-441

1988

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Optical and mechanical properties of hard hydrogenated amorphous carbon films deposited by plasma CVD

Japanese Journal of Applied Physics, 1990-12, Vol.29 (12), p.2815-2819

1990

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Depth and State Analyses of Deuterium and Helium in D 2 -Annealed He + -Implanted Yttrium Iron Garnet

Japanese Journal of Applied Physics, 1995-11, Vol.34 (11R), p.6260

1995

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Microcrystallization in P-doped Si:H films at high deposition rate

Japanese Journal of Applied Physics, 1987-07, Vol.26 (7), p.987-990

1987

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Imaginary Part of the Dielectric Function of Sintered and Microcrystalline Cubic Boron Nitride

Japanese Journal of Applied Physics, 1989-03, Vol.28 (3R), p.555

1989

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Effect of hydrogen dilution on structure of a-Si:H prepared by substrate impedance tuning technique

Japanese Journal of Applied Physics, 1988-04, Vol.27 (4), p.475-479

1988

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Photoinduced absorption on phosphorus and nitrogen doped a-Si:H films prepared at high deposition-rate

Japanese Journal of Applied Physics, 1987-05, Vol.26 (5), p.655-659

1987

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Structure change of microcrystalline silicon films in deposition process

Japanese Journal of Applied Physics, 1984-01, Vol.23 (2), p.179-183

1984

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Effect of annealing on photoinduced absorption in amorphous silicon films prepared at high deposition rates

Japanese Journal of Applied Physics, 1986-04, Vol.25 (4), p.515-518

1986

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Fabrication of DC superconducting quantum interference devices with hybrid structure of polycrystalline Y1Ba2Cu3Ox films and epitaxial Y1Ba2Cu3Ox films

Japanese journal of applied physics, 1993-06, Vol.32 (6A), p.2653-2655

1993

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Defect states and electronic properties of post-hydrogenated CVD amorphous silicon

Japanese Journal of Applied Physics, 1983-12, Vol.22 (12), p.1766-1770

1983

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Proton nuclear magnetic resonance studies on structural changes induced by annealing of hydrogenated amorphous silicon films prepared at high deposition-rate

Japanese Journal of Applied Physics, 1986-08, Vol.25 (8), p.1148-1151

1986

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Soft X-ray emission spectra of B K and Si L2,3 in B-Si-Ge alloys

Japanese journal of applied physics, 1989-02, Vol.28 (2), p.301-302

1989

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Impurity effects in chalcogenide amorphous semiconductors by low-temperature diffusion of metal ions

Japanese Journal of Applied Physics, 1984-01, Vol.23 (10), p.1320-1324

1984

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Broad-band conductive spectra of polypropylene oxide complexed with LiClO4

Three-dimensional Ultrasound Image Presentation on an Immersive Projection System

Microstructure of Fe-B-Si Alloy Surface Layers Produced by Laser-Quenching

Direct observation of crystallization process from amorphous Y-Ba-Cu-O film by means of optical microscopy

High-speed etching of indium-tin-oxide thin films using an inductively coupled plasma

Reflectance spectra of BN materials in the vacuum ultraviolet

Optical and mechanical properties of hard hydrogenated amorphous carbon films deposited by plasma CVD

Depth and State Analyses of Deuterium and Helium in D 2 -Annealed He + -Implanted Yttrium Iron Garnet

Microcrystallization in P-doped Si:H films at high deposition rate

Imaginary Part of the Dielectric Function of Sintered and Microcrystalline Cubic Boron Nitride

Effect of hydrogen dilution on structure of a-Si:H prepared by substrate impedance tuning technique

Photoinduced absorption on phosphorus and nitrogen doped a-Si:H films prepared at high deposition-rate

Structure change of microcrystalline silicon films in deposition process

Effect of annealing on photoinduced absorption in amorphous silicon films prepared at high deposition rates

Fabrication of DC superconducting quantum interference devices with hybrid structure of polycrystalline Y1Ba2Cu3Ox films and epitaxial Y1Ba2Cu3Ox films

Defect states and electronic properties of post-hydrogenated CVD amorphous silicon

Proton nuclear magnetic resonance studies on structural changes induced by annealing of hydrogenated amorphous silicon films prepared at high deposition-rate

Soft X-ray emission spectra of B K and Si L2,3 in B-Si-Ge alloys

Impurity effects in chalcogenide amorphous semiconductors by low-temperature diffusion of metal ions

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