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Ab Initio Study of Hydrogen Desorption from Diamond C(100) Surfaces

Japanese Journal of Applied Physics, 1999-07, Vol.38 (7A), p.L783

1999

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Roles of strain and carrier in silicon oxidation

Japanese Journal of Applied Physics, 2020-07, Vol.59 (SM), p.SM0801

2020

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Structural analysis of an InP(111)A surface using reflection high-energy electron diffraction rocking curves

Japanese Journal of Applied Physics, 2019-08, Vol.58 (SI), p.SIIA14

2019

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Relation between Auger enhancements and wave field of high energy electrons for planar surface bilayer of InP(111)A-(1 × 1)

Japanese Journal of Applied Physics, 2020-07, Vol.59 (7), p.70905

2020

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Polarity identification of ZnO(0001) surface by reflection high-energy electron diffraction

Japanese Journal of Applied Physics, 2018-04, Vol.57 (4), p.45701

2018

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Flattening of copper surfaces with a low energy xenon-ion source generated by photoemission-assisted plasma

Japanese Journal of Applied Physics, 2019-09, Vol.58 (9), p.90911

2019

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Intercalated multilayer graphene wires and metal/multilayer graphene hybrid wires obtained by annealing sputtered amorphous carbon

Japanese Journal of Applied Physics, 2014-04, Vol.53 (4S), p.4-1-04EB05-5

2014

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Detection of molecular oxygen adsorbate during room-temperature oxidation of Si(100)2 × 1 surface: In situ synchrotron radiation photoemission study

Japanese Journal of Applied Physics, 2016-10, Vol.55 (10), p.100307

2016

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Vacuum Annealing Formation of Graphene on Diamond C(111) Surfaces Studied by Real-Time Photoelectron Spectroscopy

Japanese Journal of Applied Physics, 2012-11, Vol.51 (11), p.11PF02-11PF02-7

2012

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Argon gas flow through glass nanopipette

Japanese Journal of Applied Physics, 2016-12, Vol.55 (12), p.125202

2016

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Relation Between Oxidation Rate and Oxidation-Induced Strain at SiO2/Si(001) Interfaces during Thermal Oxidation

Jpn J Appl Phys, 2013-11, Vol.52 (11), p.110128-110128-7

2013

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Influence of Solvents in Micropatterning of Semiconductors by Microcontact Printing and Application to Thin-Film Transistor Devices

Japanese Journal of Applied Physics, 2008-02, Vol.47 (2R), p.1115

2008

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Formation of Diamond-Like Carbon Films by Photoemission-Assisted Plasma-Enhanced Chemical Vapor Deposition

Japanese Journal of Applied Physics, 2013-11, Vol.52 (11), p.110123-110123-11

2013

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Micropatterning of Electrodes by Microcontact Printing Method and Application to Thin Film Transistor Devices

Japanese Journal of Applied Physics, 2007-09, Vol.46 (9R), p.5960

2007

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Fabrication of Graphene Directly on SiO2 without Transfer Processes by Annealing Sputtered Amorphous Carbon

Jpn J Appl Phys, 2012-04, Vol.51 (4), p.04DB01-04DB01-6

2012

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High-Current Reliability and Growth Conditions of Multilayer Graphene Wire Obtained by Annealing Sputtered Amorphous Carbon

Japanese Journal of Applied Physics, 2013-04, Vol.52 (4), p.04CB07-04CB07-6

2013

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Relation Between Oxidation Rate and Oxidation-Induced Strain at SiO 2 /Si(001) Interfaces during Thermal Oxidation

Japanese Journal of Applied Physics, 2013-11, Vol.52 (11R), p.110128

2013

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Graphene Growth and Carbon Diffusion Process during Vacuum Heating on Cu(111)/Al2O3 Substrates

Jpn J Appl Phys, 2013-11, Vol.52 (11), p.110122-110122-8

2013

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Rate-Limiting Reactions of Growth and Decomposition Kinetics of Very Thin Oxides on Si(001) Surfaces Studied by Reflection High-Energy Electron Diffraction Combined with Auger Electron Spectroscopy

Japanese Journal of Applied Physics, 2006-09, Vol.45 (9R), p.7063

2006

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Temperature Dependence of Oxidation-Induced Changes of Work Function on Si(001)2×1 Surface Studied by Real-Time Ultraviolet Photoelectron Spectroscopy

Japanese Journal of Applied Physics, 2005-08, Vol.44 (8L), p.L1048

2005

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Spectroscopic Analysis of Graphitization and Grain Orientation of Carbon Films Grown by Photoemission-Assisted Plasma-Enhanced Chemical Vapor Deposition

Japanese Journal of Applied Physics, 2013-06, Vol.52 (6), p.065503-065503-9

2013

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Vacuum Annealing Formation of Graphene on Diamond C(111) Surfaces Studied by Real-Time Photoelectron Spectroscopy

Japanese Journal of Applied Physics, 2012-11, Vol.51 (11S), p.11

2012

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Graphene Growth and Carbon Diffusion Process during Vacuum Heating on Cu(111)/Al 2 O 3 Substrates

Japanese Journal of Applied Physics, 2013-11, Vol.52 (11R), p.110122

2013

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Fabrication of Graphene Directly on SiO 2 without Transfer Processes by Annealing Sputtered Amorphous Carbon

Japanese Journal of Applied Physics, 2012-04, Vol.51 (4S), p.4

2012

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Graphene Growth and Carbon Diffusion Process during Vacuum Heating on Cu(111)/Al sub(2)O sub(3) Substrates

Japanese Journal of Applied Physics, 2013-01, Vol.52 (11R), p.110122-1-110122-8

2013

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Ab Initio Study of Hydrogen Desorption from Diamond C(100) Surfaces

Roles of strain and carrier in silicon oxidation

Structural analysis of an InP(111)A surface using reflection high-energy electron diffraction rocking curves

Relation between Auger enhancements and wave field of high energy electrons for planar surface bilayer of InP(111)A-(1 × 1)

Polarity identification of ZnO(0001) surface by reflection high-energy electron diffraction

Flattening of copper surfaces with a low energy xenon-ion source generated by photoemission-assisted plasma

Intercalated multilayer graphene wires and metal/multilayer graphene hybrid wires obtained by annealing sputtered amorphous carbon

Detection of molecular oxygen adsorbate during room-temperature oxidation of Si(100)2 × 1 surface: In situ synchrotron radiation photoemission study

Vacuum Annealing Formation of Graphene on Diamond C(111) Surfaces Studied by Real-Time Photoelectron Spectroscopy

Argon gas flow through glass nanopipette

Relation Between Oxidation Rate and Oxidation-Induced Strain at SiO2/Si(001) Interfaces during Thermal Oxidation

Influence of Solvents in Micropatterning of Semiconductors by Microcontact Printing and Application to Thin-Film Transistor Devices

Formation of Diamond-Like Carbon Films by Photoemission-Assisted Plasma-Enhanced Chemical Vapor Deposition

Micropatterning of Electrodes by Microcontact Printing Method and Application to Thin Film Transistor Devices

Fabrication of Graphene Directly on SiO2 without Transfer Processes by Annealing Sputtered Amorphous Carbon

High-Current Reliability and Growth Conditions of Multilayer Graphene Wire Obtained by Annealing Sputtered Amorphous Carbon

Relation Between Oxidation Rate and Oxidation-Induced Strain at SiO 2 /Si(001) Interfaces during Thermal Oxidation

Graphene Growth and Carbon Diffusion Process during Vacuum Heating on Cu(111)/Al2O3 Substrates

Rate-Limiting Reactions of Growth and Decomposition Kinetics of Very Thin Oxides on Si(001) Surfaces Studied by Reflection High-Energy Electron Diffraction Combined with Auger Electron Spectroscopy

Temperature Dependence of Oxidation-Induced Changes of Work Function on Si(001)2×1 Surface Studied by Real-Time Ultraviolet Photoelectron Spectroscopy

Spectroscopic Analysis of Graphitization and Grain Orientation of Carbon Films Grown by Photoemission-Assisted Plasma-Enhanced Chemical Vapor Deposition

Vacuum Annealing Formation of Graphene on Diamond C(111) Surfaces Studied by Real-Time Photoelectron Spectroscopy

Graphene Growth and Carbon Diffusion Process during Vacuum Heating on Cu(111)/Al 2 O 3 Substrates

Fabrication of Graphene Directly on SiO 2 without Transfer Processes by Annealing Sputtered Amorphous Carbon

Graphene Growth and Carbon Diffusion Process during Vacuum Heating on Cu(111)/Al sub(2)O sub(3) Substrates

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