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Reactive ion etching process of SiO 2 film using on-site synthesized C 2 F 4 from CF 4

Japanese Journal of Applied Physics, 2021-05, Vol.60 (5), p.50904

2021

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Reactive ion etching process of SiO2 film using on-site synthesized C2F4 from CF4

Japanese Journal of Applied Physics, 2021-05, Vol.60 (5)

2021

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AlN/AlGaN heterojunction field-effect transistors with a high-AlN-mole-fraction Al0.72Ga0.28N channel grown on single-crystal AlN substrate by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, 2024-11, Vol.63 (11), p.111003

2024

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AlN/AlGaN heterojunction field-effect transistors with a high-AlN-mole-fraction Al 0.72 Ga 0.28 N channel grown on single-crystal AlN substrate by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, 2024-11, Vol.63 (11), p.111003

2024

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Development and evaluation of microwave microfluidic devices made of polydimethylsiloxane

Japanese Journal of Applied Physics, 2023-06, Vol.62 (SG), p.SG1027

2023

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In situ high-temperature X-ray diffraction measurements of Pb(Zr0.58Ti0.42)O3 epitaxial thin films grown on Si substrates

Japanese Journal of Applied Physics, 2022-11, Vol.61 (SN), p.SN1012

2022

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Epitaxial growth of copper phthalocyanine on a large single-grain of thin film alkyl perylene diimide

Japanese Journal of Applied Physics, 2024-02, Vol.63 (2), p.025502

2024

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In situ high-temperature X-ray diffraction measurements of Pb(Zr 0.58 Ti 0.42 )O 3 epitaxial thin films grown on Si substrates

Japanese Journal of Applied Physics, 2022-11, Vol.61 (SN), p.SN1012

2022

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Ejection of boron from L1 0 phase for sputtered FePt-BN granular films by post-annealing

Japanese Journal of Applied Physics, 2023-03, Vol.62 (SB), p.SB1013

2023

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Ejection of boron from L10 phase for sputtered FePt-BN granular films by post-annealing

Japanese Journal of Applied Physics, 2023-03, Vol.62 (SB), p.SB1013

2023

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Investigation of erosion mechanism of tungsten-based electrode in multiphase AC arc by high-speed visualization of electrode phenomena

Japanese Journal of Applied Physics, 2016-07, Vol.55 (7S2), p.7-07LC01

2016

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Femtosecond-laser-induced modifications on the surface of a single-crystalline diamond

Japanese Journal of Applied Physics, 2017-11, Vol.56 (11), p.112701

2017

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Femtosecond-laser-induced modifications on a 4H-SiC surface and their application to low-temperature diffusion at the Ni/SiC interface

Japanese Journal of Applied Physics, 2018-11, Vol.57 (11), p.116501

2018

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Magnetoresistance of a Spin Metal--Oxide--Semiconductor Field-Effect Transistor with Ferromagnetic MnAs Source and Drain Contacts

Japanese Journal of Applied Physics, 2010-11, Vol.49 (11), p.113001-113001-4

2010

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Complementary Metal–Oxide–Silicon Field-Effect-Transistors Featuring Atomically Flat Gate Insulator Film/Silicon Interface

Japanese Journal of Applied Physics, 2009-04, Vol.48 (4S), p.4

2009

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Femtosecond laser-induced modification at aluminum/diamond interface

Japanese Journal of Applied Physics, 2017-02, Vol.56 (2), p.26601-026601

2017

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Silicon-Wire Waveguide Based External Cavity Laser for Milliwatt-Order Output Power and Temperature Control Free Operation with Silicon Ring Modulator

Japanese Journal of Applied Physics, 2012-08, Vol.51 (8), p.082101-082101-5

2012

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Silicon-Wire Waveguide Based External Cavity Laser for Milliwatt-Order Output Power and Temperature Control Free Operation with Silicon Ring Modulator

Japanese Journal of Applied Physics, 2012-08, Vol.51 (8R), p.82101

2012

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Surface Smoothing Effect and Characteristics of New 1,4-Phenylenediamine Polymer as Anode Buffer Layer

Japanese Journal of Applied Physics, 2007-11, Vol.46 (11R), p.7424

2007

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Threshold Voltage Modulation Technique using Fluorine Treatment through Atomic Layer Deposition TiN Suitable for Complementary Metal–Oxide–Semiconductor Devices

Japanese Journal of Applied Physics, 2008-04, Vol.47 (4S), p.2345

2008

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Near-edge X-ray Absorption Fine Structure of PdO at O K-edge

Japanese Journal of Applied Physics, 2005-06, Vol.44 (6R), p.4057

2005

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Dilute Ga Dopant in TiO 2 by X-ray Absorption Near-Edge Structure

Japanese Journal of Applied Physics, 2006-09, Vol.45 (9R), p.7028

2006

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ELECTRONIC STRUCTURE OF Bi4Ti3O12 THIN FILM BY SOFT-X-RAY EMISSION SPECTROSCOPY

Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 9B, pp. 5803-5805. 2001, 2001, Vol.40 (9B), p.5803-5805

2001

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Proton Irradiation Experiment for X-ray Charge-Coupled Devices of the Monitor of All-Sky X-ray Image Mission Onboard the International Space Station: I. Experimental Setup and Measurement of the Charge Transfer Inefficiency

Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 12), p.7542-7549

2002

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Tinv Scaling and Gate Leakage Reduction for n-Type Metal Oxide Semiconductor Field Effect Transistor with HfSi x /HfO 2 Gate Stack by Interfacial Layer Formation Using Ozone–Water-Last Treatment

Japanese Journal of Applied Physics, 2008-04, Vol.47 (4S), p.2379

2008

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Reactive ion etching process of SiO 2 film using on-site synthesized C 2 F 4 from CF 4

Reactive ion etching process of SiO2 film using on-site synthesized C2F4 from CF4

AlN/AlGaN heterojunction field-effect transistors with a high-AlN-mole-fraction Al0.72Ga0.28N channel grown on single-crystal AlN substrate by metalorganic chemical vapor deposition

AlN/AlGaN heterojunction field-effect transistors with a high-AlN-mole-fraction Al 0.72 Ga 0.28 N channel grown on single-crystal AlN substrate by metalorganic chemical vapor deposition

Development and evaluation of microwave microfluidic devices made of polydimethylsiloxane

In situ high-temperature X-ray diffraction measurements of Pb(Zr0.58Ti0.42)O3 epitaxial thin films grown on Si substrates

Epitaxial growth of copper phthalocyanine on a large single-grain of thin film alkyl perylene diimide

In situ high-temperature X-ray diffraction measurements of Pb(Zr 0.58 Ti 0.42 )O 3 epitaxial thin films grown on Si substrates

Ejection of boron from L1 0 phase for sputtered FePt-BN granular films by post-annealing

Ejection of boron from L10 phase for sputtered FePt-BN granular films by post-annealing

Investigation of erosion mechanism of tungsten-based electrode in multiphase AC arc by high-speed visualization of electrode phenomena

Femtosecond-laser-induced modifications on the surface of a single-crystalline diamond

Femtosecond-laser-induced modifications on a 4H-SiC surface and their application to low-temperature diffusion at the Ni/SiC interface

Magnetoresistance of a Spin Metal--Oxide--Semiconductor Field-Effect Transistor with Ferromagnetic MnAs Source and Drain Contacts

Complementary Metal–Oxide–Silicon Field-Effect-Transistors Featuring Atomically Flat Gate Insulator Film/Silicon Interface

Femtosecond laser-induced modification at aluminum/diamond interface

Silicon-Wire Waveguide Based External Cavity Laser for Milliwatt-Order Output Power and Temperature Control Free Operation with Silicon Ring Modulator

Silicon-Wire Waveguide Based External Cavity Laser for Milliwatt-Order Output Power and Temperature Control Free Operation with Silicon Ring Modulator

Surface Smoothing Effect and Characteristics of New 1,4-Phenylenediamine Polymer as Anode Buffer Layer

Threshold Voltage Modulation Technique using Fluorine Treatment through Atomic Layer Deposition TiN Suitable for Complementary Metal–Oxide–Semiconductor Devices

Near-edge X-ray Absorption Fine Structure of PdO at O K-edge

Dilute Ga Dopant in TiO 2 by X-ray Absorption Near-Edge Structure

ELECTRONIC STRUCTURE OF Bi4Ti3O12 THIN FILM BY SOFT-X-RAY EMISSION SPECTROSCOPY

Proton Irradiation Experiment for X-ray Charge-Coupled Devices of the Monitor of All-Sky X-ray Image Mission Onboard the International Space Station: I. Experimental Setup and Measurement of the Charge Transfer Inefficiency

Tinv Scaling and Gate Leakage Reduction for n-Type Metal Oxide Semiconductor Field Effect Transistor with HfSi x /HfO 2 Gate Stack by Interfacial Layer Formation Using Ozone–Water-Last Treatment

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