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Photoresponse of Titanium Dioxide Surface on Atomic Scale: Site for Visible Light Absorption

Japanese Journal of Applied Physics, 2004-07, Vol.43 (7S), p.4584

2004

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Cobalt Chemical Vapor Deposition Process on Molybdenite Basal Plane Observed by Ultrahigh-Vacuum Scanning Tunneling Microscopy

Japanese Journal of Applied Physics, 2005-07, Vol.44 (7S), p.5455

2005

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TiN FILMS PREPARED BY FLOW MODULATION CHEMICAL VAPOR DEPOSITION USING TiCl4 AND NH3

Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 3A, pp. 1517-1521. 2001, 2001, Vol.40 (3A), p.1517-1521

2001

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Selective Silicidation of Co Using Silane or Disilane for Anti-Oxidation Barrier Layer in Cu Metallization

Japanese Journal of Applied Physics, 2004-09, Vol.43 (9R), p.6001

2004

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High-Temperature Thick Al Wire Bonding Technology for High-Power Modules

Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 8), p.5030-5033

2002

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APPARENT LOCAL STRUCTURAL CHANGE CAUSED BY ULTRAVIOLET LIGHT ON A TiO2 SURFACE OBSERVED BY SCANNING TUNNELING MICROSCOPY

Jpn.J.Appl.Phys ,Part 1. Vol. 41, no. 7B, pp. 4936-4938. 2002, 2002, Vol.41 (7B), p.4936-4938

2002

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Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based on Ab Initio Calculations: Theoretical Process Optimization Procedure (2)

Japanese Journal of Applied Physics, 2000-12, Vol.39 (12R), p.6501

2000

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c-Axis Oriented Face-Centered-Tetragonal-FePt Nanoparticle Monolayer Formed on a Polycrystalline TiN Seed Layer

Japanese Journal of Applied Physics, 2005-11, Vol.44 (11R), p.7957

2005

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Stranski–Krastanov Growth of Tungsten during Chemical Vapor Deposition Revealed by Micro-Auger Electron Spectroscopy

Japanese Journal of Applied Physics, 2004-10, Vol.43 (10), p.6974-6977

2004

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A Void Free Soldering Process in Large-Area, High Power Insulated Gate Bipolar Transistor Modules

Japanese Journal of Applied Physics, 2001-06, Vol.40 (6R), p.3985

2001

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Preparation of low-dielectric-constant F-doped SiO2 films by plasma-enhanced chemical vapor deposition

Japanese journal of applied physics, 1996, Vol.35 (2B), p.1468-1473

1996

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Disappearance of the breakdown of quantum hall effects in short devices

Japanese Journal of Applied Physics, 1995, Vol.34 (8B), p.4309-4312

1995

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Reaction Analysis of Aluminum Chemical Vapor Deposition from Dimethyl-aluminum-hydride Using Tubular Reactor and Fourier-Transform Infrared Spectroscopy: Theoretical Process Optimization Procedure (1)

Japanese Journal of Applied Physics, 2000-03, Vol.39 (3R), p.1074

2000

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Kinetics of GaAs Metalorganic Chemical Vapor Deposition Studied by Numerical Analysis Based on Experimental Reaction Data

Japanese Journal of Applied Physics, 2000, Vol.39 (4R), p.1642-1649

2000

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The Low Temperature Bonding between Si and Electrode Using Sputtered Ag Films

Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 10), p.5904-5908

2002

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Kinetic study on oxidation of Si(111) surfaces using H2O

Japanese journal of applied physics, 1997-04, Vol.36 (4A), p.2288-2291

1997

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Simple kinetic model of ECR reactive ion beam etching reactor for the optimization of GaAs etching process

Japanese Journal of Applied Physics, 1996, Vol.35 (2B), p.1235-1241

1996

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Surface Protrusions of Chemical Vapor Deposited TiN Films Caused by Cu Contamination of Silicon Substrates

Japanese Journal of Applied Physics, 1998-05, Vol.37 (5B), p.L607

1998

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DECREASE IN DEPOSITION RATE AND IMPROVEMENT OF STEP COVERAGE BY CF4 ADDITION TO PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON OXIDE FILMS

Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 1, pp. 330-336. 2000, 2000-01, Vol.39 (1), p.330-336

2000

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Effect of Underlayers on the Morphology and Orientation of Aluminum Films Prepared by Chemical Vapor Deposition Using Dimethylaluminumhydride

Japanese Journal of Applied Physics, 1999, Vol.38 (12B), p.L1528

1999

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Examination of Surface Elementary Reaction Model for Chemical Vapor Deposition of Al Using In Situ Infrared Reflection Absorption Spectroscopy: Teoretical Optimization Procedure (3)

Japanese Journal of Applied Physics, 2002-02, Vol.41 (Part 1, No. 2A), p.570-576

2002

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Scanning Tunneling Microscopy on Ordered Self-Assemblies of Cyclodextrin Inclusion Complexes Formed by Substrate-Induced Two-Dimensional Crystal Growth

Japanese Journal of Applied Physics, 1998-06, Vol.37 (6S), p.3844

1998

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Step coverage analysis for hexamethyldisiloxane and ozone atmospheric pressure chemical vapor deposition

Japanese Journal of Applied Physics, 1994, Vol.33 (3B), p.473-475

1994

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Deposition of WSix films from preactivated mixture of WF6/SiH4

Japanese journal of applied physics, 1994, Vol.33 (1A), p.275-279

1994

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Lattice matching of α-cyclodextrin commensurate with molybdenum disulfide studied by scanning tunneling microscopy

Japanese Journal of Applied Physics, 1994-06, Vol.33 (6B), p.3720-3722

1994

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Photoresponse of Titanium Dioxide Surface on Atomic Scale: Site for Visible Light Absorption

Cobalt Chemical Vapor Deposition Process on Molybdenite Basal Plane Observed by Ultrahigh-Vacuum Scanning Tunneling Microscopy

TiN FILMS PREPARED BY FLOW MODULATION CHEMICAL VAPOR DEPOSITION USING TiCl4 AND NH3

Selective Silicidation of Co Using Silane or Disilane for Anti-Oxidation Barrier Layer in Cu Metallization

High-Temperature Thick Al Wire Bonding Technology for High-Power Modules

APPARENT LOCAL STRUCTURAL CHANGE CAUSED BY ULTRAVIOLET LIGHT ON A TiO2 SURFACE OBSERVED BY SCANNING TUNNELING MICROSCOPY

Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based on Ab Initio Calculations: Theoretical Process Optimization Procedure (2)

c-Axis Oriented Face-Centered-Tetragonal-FePt Nanoparticle Monolayer Formed on a Polycrystalline TiN Seed Layer

Stranski–Krastanov Growth of Tungsten during Chemical Vapor Deposition Revealed by Micro-Auger Electron Spectroscopy

A Void Free Soldering Process in Large-Area, High Power Insulated Gate Bipolar Transistor Modules

Preparation of low-dielectric-constant F-doped SiO2 films by plasma-enhanced chemical vapor deposition

Disappearance of the breakdown of quantum hall effects in short devices

Reaction Analysis of Aluminum Chemical Vapor Deposition from Dimethyl-aluminum-hydride Using Tubular Reactor and Fourier-Transform Infrared Spectroscopy: Theoretical Process Optimization Procedure (1)

Kinetics of GaAs Metalorganic Chemical Vapor Deposition Studied by Numerical Analysis Based on Experimental Reaction Data

The Low Temperature Bonding between Si and Electrode Using Sputtered Ag Films

Kinetic study on oxidation of Si(111) surfaces using H2O

Simple kinetic model of ECR reactive ion beam etching reactor for the optimization of GaAs etching process

Surface Protrusions of Chemical Vapor Deposited TiN Films Caused by Cu Contamination of Silicon Substrates

DECREASE IN DEPOSITION RATE AND IMPROVEMENT OF STEP COVERAGE BY CF4 ADDITION TO PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON OXIDE FILMS

Effect of Underlayers on the Morphology and Orientation of Aluminum Films Prepared by Chemical Vapor Deposition Using Dimethylaluminumhydride

Examination of Surface Elementary Reaction Model for Chemical Vapor Deposition of Al Using In Situ Infrared Reflection Absorption Spectroscopy: Teoretical Optimization Procedure (3)

Scanning Tunneling Microscopy on Ordered Self-Assemblies of Cyclodextrin Inclusion Complexes Formed by Substrate-Induced Two-Dimensional Crystal Growth

Step coverage analysis for hexamethyldisiloxane and ozone atmospheric pressure chemical vapor deposition

Deposition of WSix films from preactivated mixture of WF6/SiH4

Lattice matching of α-cyclodextrin commensurate with molybdenum disulfide studied by scanning tunneling microscopy

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