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Percolation threshold of carbon black-polyethylene composites

Japanese Journal of Applied Physics, 1997-08, Vol.36 (8), p.5163-5168

1997

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Pre-Exponential Factor in Electrical Conductivity of Irradiated Polyethylene

Japanese Journal of Applied Physics, 1972-01, Vol.11 (3), p.416-417

1972

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Formation of current leakage paths at the interface between dielectrics in intense electric fields in a gas discharge display device

Japanese Journal of Applied Physics, 1991, Vol.30 (1), p.146-151

1991

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A model of thermal transfer in Czochralski silicon molten

Japanese Journal of Applied Physics, 1991-12, Vol.30 (12A), p.3465-3470

1991

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Self-Healing Breakdown at Spherulite Boundaries of Polyethylene Thin Films

Japanese Journal of Applied Physics, 1981-01, Vol.20 (1), p.87

1981

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Observation of Dielectric Breakdown Sites in Polyethylene Thin Film

Japanese Journal of Applied Physics, 1980-01, Vol.19 (2), p.389-390

1980

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High-Tc superconductivity of La-Ba-Cu oxides. III: Electrical resistivity measurement

Japanese journal of applied physics, 1987, Vol.26 (2), p.L151-L152

1987

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Electric Breakdown of Solution-Grown Polyethylene Films without Spherulite

Japanese Journal of Applied Physics, 1982-01, Vol.21 (8R), p.1117

1982

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On the Important Effect of Water Vapor in the Atmosphere on Void Formation in Quenched Pure Aluminum

Japanese Journal of Applied Physics, 1981-01, Vol.20 (12), p.2287

1981

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A graphene oxide-based ionic decision-maker for simple fabrication and stable operation

Japanese Journal of Applied Physics, 2020-06, Vol.59 (SI), p.SIIG03

2020

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A mesoporous SiO2 thin films-based ionic decision-maker for solving multi-armed bandit problems

Japanese Journal of Applied Physics, 2020-06, Vol.59, p.1

2020

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A mesoporous SiO 2 thin films-based ionic decision-maker for solving multi-armed bandit problems

Japanese Journal of Applied Physics, 2020-06, Vol.59 (SI), p.SIIG01

2020

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Nonvolatile Memory Based on Phase Change in Se–Sb–Te Glass

Japanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 2A), p.404-408

2003

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Characterization of Hard Diamond-Like Carbon Films Formed by Ar Gas Cluster Ion Beam-Assisted Fullerene Deposition

Japanese Journal of Applied Physics, 2002-06, Vol.41 (Part 1, No. 6B), p.4295-4298

2002

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Submicron Nonvolatile Memory Cell Based on Reversible Phase Transition in Chalcogenide Glasses

Japanese Journal of Applied Physics, 2000, Vol.39 (11R), p.6157-6161

2000

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Optimum Incident Angle of Ar Cluster Ion Beam for Superhard Carbon Film Deposition

Japanese Journal of Applied Physics, 2004-06, Vol.43 (6S), p.3955

2004

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Lower Temperature Deposition of Polycrystalline Silicon Films from a Modified Inductively Coupled Silane Plasma

Japanese Journal of Applied Physics, 1999-06, Vol.38 (6R), p.3655

1999

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Propagation Characteristics of Terahertz Electrical Signals on Micro-Strip Lines Made of Optically Transparent Conductors

Japanese Journal of Applied Physics, 2005-01, Vol.44 (7L), p.L1011

2005

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Mass Resolution for Iron Isotopes in CR-39 Track Detector

Japanese Journal of Applied Physics, 2004-09, Vol.43 (9R), p.6358

2004

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Near Edge X-Ray Absorption Fine Structure Study for Optimization of Hard Diamond-Like Carbon Film Formation with Ar Cluster Ion Beam

Japanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 6B), p.3971-3975

2003

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Majority-Carrier Capture Cross Section of Amphoteric Nickel Center in Silicon Studied by Isothermal Capacitance Transient Spectroscopy

Japanese Journal of Applied Physics, 1996-09, Vol.35 (9R), p.4624

1996

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Integrated Catadioptric Pickup with Ferrofluidic Cooling Structure

Japanese Journal of Applied Physics, 2006-02, Vol.45 (2S), p.1137

2006

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Control of composition and growth rate of ZnMgS grown on GaP by molecular beam epitaxy using excess sulfur beam pressure

Japanese Journal of Applied Physics, 1997-10, Vol.36 (10A), p.L1283-L1286

1997

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DIELECTRIC DEGRADATION MECHANISM OF SiO2 EXAMINED BY FIRST-PRINCIPLES CALCULATIONS: ELECTRONIC CONDUCTION ASSOCIATED WITH ELECTRON TRAP LEVELS IN SiO2 AND STABILITY OF OXYGEN VACANCIES UNDER AN ELECTRIC FIELD

Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 4B, pp. 2021-2025. 2000, 2000, Vol.39 (4B), p.2021-2025

2000

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CONTROL OF THE STEP COVERAGE BEHAVIOR OF GATE a-SiNx:H

Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 1, pp. 217-221. 2000, 2000-01, Vol.39 (1), p.217-221

2000

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Percolation threshold of carbon black-polyethylene composites

Pre-Exponential Factor in Electrical Conductivity of Irradiated Polyethylene

Formation of current leakage paths at the interface between dielectrics in intense electric fields in a gas discharge display device

A model of thermal transfer in Czochralski silicon molten

Self-Healing Breakdown at Spherulite Boundaries of Polyethylene Thin Films

Observation of Dielectric Breakdown Sites in Polyethylene Thin Film

High-Tc superconductivity of La-Ba-Cu oxides. III: Electrical resistivity measurement

Electric Breakdown of Solution-Grown Polyethylene Films without Spherulite

On the Important Effect of Water Vapor in the Atmosphere on Void Formation in Quenched Pure Aluminum

A graphene oxide-based ionic decision-maker for simple fabrication and stable operation

A mesoporous SiO2 thin films-based ionic decision-maker for solving multi-armed bandit problems

A mesoporous SiO 2 thin films-based ionic decision-maker for solving multi-armed bandit problems

Nonvolatile Memory Based on Phase Change in Se–Sb–Te Glass

Characterization of Hard Diamond-Like Carbon Films Formed by Ar Gas Cluster Ion Beam-Assisted Fullerene Deposition

Submicron Nonvolatile Memory Cell Based on Reversible Phase Transition in Chalcogenide Glasses

Optimum Incident Angle of Ar Cluster Ion Beam for Superhard Carbon Film Deposition

Lower Temperature Deposition of Polycrystalline Silicon Films from a Modified Inductively Coupled Silane Plasma

Propagation Characteristics of Terahertz Electrical Signals on Micro-Strip Lines Made of Optically Transparent Conductors

Mass Resolution for Iron Isotopes in CR-39 Track Detector

Near Edge X-Ray Absorption Fine Structure Study for Optimization of Hard Diamond-Like Carbon Film Formation with Ar Cluster Ion Beam

Majority-Carrier Capture Cross Section of Amphoteric Nickel Center in Silicon Studied by Isothermal Capacitance Transient Spectroscopy

Integrated Catadioptric Pickup with Ferrofluidic Cooling Structure

Control of composition and growth rate of ZnMgS grown on GaP by molecular beam epitaxy using excess sulfur beam pressure

DIELECTRIC DEGRADATION MECHANISM OF SiO2 EXAMINED BY FIRST-PRINCIPLES CALCULATIONS: ELECTRONIC CONDUCTION ASSOCIATED WITH ELECTRON TRAP LEVELS IN SiO2 AND STABILITY OF OXYGEN VACANCIES UNDER AN ELECTRIC FIELD

CONTROL OF THE STEP COVERAGE BEHAVIOR OF GATE a-SiNx:H

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