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A Silicon-On-Insulator Lateral IGBT With Segmented Trenches for Improving Short-Circuit Withstanding Capability

IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.4042-4045

2022

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Improvement in U-Shaped Channel SOI Lateral IGBT for Wider Reverse Bias Safe Operating Area

IEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1-5

2023

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Influence of Termination Isolation Deep-Oxide Trenches on Short-Circuit Capability in Silicon-On-Insulator Lateral IGBT

IEEE transactions on electron devices, 2022-10, Vol.69 (10), p.5944-5947

2022

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Novel SOI LDMOS Without RESURF Effect by Flexible Substrate for Flexible Electronic Systems

IEEE transactions on electron devices, 2021-08, Vol.68 (8), p.4150-4155

2021

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Total-Ionizing-Dose Radiation-Induced Dual-Channel Leakage Current at Unclosed Edge Termination for High Voltage SOI LDMOS

IEEE transactions on electron devices, 2021-06, Vol.68 (6), p.2861-2866

2021

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Improvement of SOI Trench LDMOS Performance With Double Vertical Metal Field Plate

IEEE transactions on electron devices, 2014-10, Vol.61 (10), p.3477-3482

2014

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A Novel S-Gate-Assisted SOI n-MOSFET for Total Ionizing Dose Radiation Reinforcement

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.956-961

2022

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High-Voltage Integrated Circuits: History, State of the Art, and Future Prospects

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.659-673

2017

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Band-to-Band Tunneling Based Ultra-Energy-Efficient Silicon Neuron

IEEE transactions on electron devices, 2020-06, Vol.67 (6), p.2614-2620

2020

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Simulation Study of Novel Trench Gate U-Shaped Channel SOI Lateral IGBTs With Suppressed Gate Voltage Overshoot and Reduced di/dt

IEEE transactions on electron devices, 2021-08, Vol.68 (8), p.3930-3935

2021

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Impact of Back-Gate Biasing on the Transport Properties of 22 nm FD-SOI MOSFETs at Cryogenic Temperatures

IEEE transactions on electron devices, 2022-10, Vol.69 (10), p.5417-5423

2022

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RF Performance of SOI CMOS Technology on Commercial 200-mm Enhanced Signal Integrity High Resistivity SOI Substrate

IEEE transactions on electron devices, 2014-03, Vol.61 (3), p.722-728

2014

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Dynamic Thermal Management in SOI Transistors Using Holey Silicon-Based Thermoelectric Cooling

IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.2577-2584

2024

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Experimental Analysis and Modeling of Self-Heating and Thermal Coupling in 28 nm FD-SOI CMOS Transistors Down to Cryogenic Temperatures

IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.2598-2604

2024

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Characterization and Modeling of Silicon-on-Insulator Lateral Bipolar Junction Transistors at Liquid Helium Temperature

IEEE transactions on electron devices, 2024-06, Vol.71 (6), p.3525-3531

2024

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Symmetric BSIM-SOI-Part II: A Compact Model for Partially Depleted SOI MOSFETs

IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.2293-2300

2024

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Novel Snapback-Free SOI LIGBT With Shorted Anode and Trench Barriers

IEEE transactions on electron devices, 2021-05, Vol.68 (5), p.2408-2413

2021

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Ultrathin Body and Buried Oxide SOI MOSFETs With Non-LDD Source/Drain Extensions: A Simulation Study

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.412-417

2024

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Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor: Current Technologies and Prospects

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.381-392

2024

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Thermal Resistance Characterization for Multifinger SOI-MOSFETs

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3626-3632

2018

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Analysis of Airgaps for OFF-State Capacitance Reduction in SOI-CMOS RF Switches

IEEE transactions on electron devices, 2023-11, Vol.70 (11), p.5814-5817

2023

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Enhancement of Silicon Critical Breakdown Field by Reducing the Avalanche Breakdown Distance to Improve the Breakdown Voltage of Thin SOI Device

IEEE transactions on electron devices, 2023-06, Vol.70 (6), p.2905-2910

2023

Volltextzugriff (PDF)

RF Small- and Large-Signal Characteristics of CPW and TFMS Lines on Trap-Rich HR-SOI Substrates

IEEE transactions on electron devices, 2018-08, Vol.65 (8), p.3120-3126

2018

Volltextzugriff (PDF)

Repetitive ESD-Induced Electrical Degradation and Optimization for High-Voltage SOI-LIGBT as Output Device

IEEE transactions on electron devices, 2023-09, Vol.70 (9), p.4547-4553

2023

Volltextzugriff (PDF)

High-Temperature Stability Analysis of SOI-MOSFETs Characteristics Based on SPTI Model

IEEE transactions on electron devices, 2023-09, Vol.70 (9), p.4786-4792

2023

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A Silicon-On-Insulator Lateral IGBT With Segmented Trenches for Improving Short-Circuit Withstanding Capability

Improvement in U-Shaped Channel SOI Lateral IGBT for Wider Reverse Bias Safe Operating Area

Influence of Termination Isolation Deep-Oxide Trenches on Short-Circuit Capability in Silicon-On-Insulator Lateral IGBT

Novel SOI LDMOS Without RESURF Effect by Flexible Substrate for Flexible Electronic Systems

Total-Ionizing-Dose Radiation-Induced Dual-Channel Leakage Current at Unclosed Edge Termination for High Voltage SOI LDMOS

Improvement of SOI Trench LDMOS Performance With Double Vertical Metal Field Plate

A Novel S-Gate-Assisted SOI n-MOSFET for Total Ionizing Dose Radiation Reinforcement

High-Voltage Integrated Circuits: History, State of the Art, and Future Prospects

Band-to-Band Tunneling Based Ultra-Energy-Efficient Silicon Neuron

Simulation Study of Novel Trench Gate U-Shaped Channel SOI Lateral IGBTs With Suppressed Gate Voltage Overshoot and Reduced di/dt

Impact of Back-Gate Biasing on the Transport Properties of 22 nm FD-SOI MOSFETs at Cryogenic Temperatures

RF Performance of SOI CMOS Technology on Commercial 200-mm Enhanced Signal Integrity High Resistivity SOI Substrate

Dynamic Thermal Management in SOI Transistors Using Holey Silicon-Based Thermoelectric Cooling

Experimental Analysis and Modeling of Self-Heating and Thermal Coupling in 28 nm FD-SOI CMOS Transistors Down to Cryogenic Temperatures

Characterization and Modeling of Silicon-on-Insulator Lateral Bipolar Junction Transistors at Liquid Helium Temperature

Symmetric BSIM-SOI-Part II: A Compact Model for Partially Depleted SOI MOSFETs

Novel Snapback-Free SOI LIGBT With Shorted Anode and Trench Barriers

Ultrathin Body and Buried Oxide SOI MOSFETs With Non-LDD Source/Drain Extensions: A Simulation Study

Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor: Current Technologies and Prospects

Thermal Resistance Characterization for Multifinger SOI-MOSFETs

Analysis of Airgaps for OFF-State Capacitance Reduction in SOI-CMOS RF Switches

Enhancement of Silicon Critical Breakdown Field by Reducing the Avalanche Breakdown Distance to Improve the Breakdown Voltage of Thin SOI Device

RF Small- and Large-Signal Characteristics of CPW and TFMS Lines on Trap-Rich HR-SOI Substrates

Repetitive ESD-Induced Electrical Degradation and Optimization for High-Voltage SOI-LIGBT as Output Device

High-Temperature Stability Analysis of SOI-MOSFETs Characteristics Based on SPTI Model

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