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Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors

IEEE transactions on electron devices, 1986-05, Vol.33 (5), p.564-571

1986

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Ultra-low-noise cryogenic high-electron-mobility transistors

IEEE transactions on electron devices, 1988-03, Vol.35 (3), p.249-256

1988

Volltextzugriff (PDF)

Properties of MODFET's grown on Si substrates at DC and microwave frequencies

IEEE transactions on electron devices, 1986-10, Vol.33 (10), p.1407-1412

1986

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32-GHz cryogenically cooled HEMT low-noise amplifiers

IEEE transactions on electron devices, 1989-08, Vol.36 (8), p.1528-1535

1989

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The DC, AC, and noise properties of the GaAs/AlGaAs modulation-doped field-effect transistor channel

IEEE transactions on electron devices, 1986-10, Vol.33 (10), p.1439-1446, Article 1439

1986

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A dc and microwave comparison of GaAs MESFET's on GaAs and Si substrates

IEEE transactions on electron devices, 1986-02, Vol.33 (2), p.206-213

1986

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Microwave characterization of (Al,Ga)As/GaAs modulation-doped FET's: Bias dependence of small-signal parameters

IEEE transactions on electron devices, 1984-10, Vol.31 (10), p.1399-1402

1984

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Bias dependence and light sensitivity of (Al, Ga)As/GaAs MODFET's at 77 K

IEEE transactions on electron devices, 1983-12, Vol.30 (12), p.1806-1811

1983

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The dependence of 77 K electron velocity-field characteristics on low-field mobility in AlGaAs-GaAs modulation-doped structures

IEEE transactions on electron devices, 1986-05, Vol.33 (5), p.639-645

1986

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Design of enhanced Schottky-barrier AlGaAs/GaAs MODFET's using highly doped p+surface layers

IEEE transactions on electron devices, 1987-02, Vol.34 (2), p.175-180

1987

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Analysis of camel gate FET's (CAMFET's)

IEEE transactions on electron devices, 1983-03, Vol.30 (3), p.212-216

1983

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Low-noise behavior of InGaAs quantum-well-structured modulation-doped FET's from 10-2 to 108 Hz

IEEE transactions on electron devices, 1986-05, Vol.33 (5), p.576-582

1986

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Temperature dependence of Al/undoped Al0.5Ga0.5As/GaAs capacitors

IEEE transactions on electron devices, 1984-09, Vol.31 (9), p.1164-1168

1984

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On the collapse of drain I-V characteristics in modulation-doped FET's at cryogenic temperatures

IEEE transactions on electron devices, 1984-08, Vol.31 (8), p.1028-1032

1984

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The dependence of 77k electron velocity-field characteristics on low-field mobility in AlGaAs-GaAs modulation-doped structures

IEEE transactions on electron devices, 1986, Vol.33 (5), p.639-645

1986

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Low-noise behavior of InGaAs quantum-well-structured modulation-doped FETs from 10 super(-2) to 10 super(8) Hz

IEEE transactions on electron devices, 1986-01, Vol.ED-33 (5), p.576-582

1986

Volltextzugriff (PDF)

Temperature dependence of Al/undoped Al(0.5)Ga(0.5)As/GaAs capacitors

IEEE transactions on electron devices, 1984-09, Vol.ED-31, p.1164-1168

1984

Volltextzugriff (PDF)

Design of enhanced Schottky-barrier AlGaAs/GaAs MODFET's using highly doped p super(+) surface layers

IEEE transactions on electron devices, 1987-01, Vol.ED-34 (2), p.175-180

1987

Volltextzugriff (PDF)

Ultra-low-noise cryogenic high-electron-mobility transistor

IEEE transactions on electron devices, 1988, Vol.35 (3), p.249-256

1988

Volltextzugriff (PDF)

Temperature dependence of Al/undoped Al sub(0.5)Ga sub(0.5)As/GaAs Capacitors

IEEE transactions on electron devices, 1984-01, Vol.ED-31 (9), p.1164-1167

1984

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Submicron gate GaAs/Al(0.3)Ga(0.7)AS MESFET''s with extremely sharp interfaces (40 A )

IEEE transactions on electron devices, 1982-06, Vol.29 (6), p.1013-1018

1982

Volltextzugriff (PDF)

Submicron gate GaAs/Al(0.3)Ga(0.7)AS MESFET' s with extremely sharp interfaces (40 A )

IEEE transactions on electron devices, 1982-06, Vol.29 (6), p.1013-1018

1982

Volltextzugriff (PDF)

Submicron gate GaAs/Al0.3Ga0.7AS MESFET's with extremely sharp interfaces (40 Å)

IEEE transactions on electron devices, 1982-06, Vol.29 (6), p.1013-1018

1982

Volltextzugriff (PDF)

Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transitors

IEEE transactions on electron devices, 1986, Vol.33 (5), p.564-571

1986

Volltextzugriff (PDF)

The influence of donor neutralization on the transfer characteristics of MODFET's at 77 K: Theory and experiment

IEEE transactions on electron devices, 1985-03, Vol.32 (3), p.713-716

1985

Volltextzugriff (PDF)

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Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors

Ultra-low-noise cryogenic high-electron-mobility transistors

Properties of MODFET's grown on Si substrates at DC and microwave frequencies

32-GHz cryogenically cooled HEMT low-noise amplifiers

The DC, AC, and noise properties of the GaAs/AlGaAs modulation-doped field-effect transistor channel

A dc and microwave comparison of GaAs MESFET's on GaAs and Si substrates

Microwave characterization of (Al,Ga)As/GaAs modulation-doped FET's: Bias dependence of small-signal parameters

Bias dependence and light sensitivity of (Al, Ga)As/GaAs MODFET's at 77 K

The dependence of 77 K electron velocity-field characteristics on low-field mobility in AlGaAs-GaAs modulation-doped structures

Design of enhanced Schottky-barrier AlGaAs/GaAs MODFET's using highly doped p+surface layers

Analysis of camel gate FET's (CAMFET's)

Low-noise behavior of InGaAs quantum-well-structured modulation-doped FET's from 10-2 to 108 Hz

Temperature dependence of Al/undoped Al0.5Ga0.5As/GaAs capacitors

On the collapse of drain I-V characteristics in modulation-doped FET's at cryogenic temperatures

The dependence of 77k electron velocity-field characteristics on low-field mobility in AlGaAs-GaAs modulation-doped structures

Low-noise behavior of InGaAs quantum-well-structured modulation-doped FETs from 10 super(-2) to 10 super(8) Hz

Temperature dependence of Al/undoped Al(0.5)Ga(0.5)As/GaAs capacitors

Design of enhanced Schottky-barrier AlGaAs/GaAs MODFET's using highly doped p super(+) surface layers

Ultra-low-noise cryogenic high-electron-mobility transistor

Temperature dependence of Al/undoped Al sub(0.5)Ga sub(0.5)As/GaAs Capacitors

Submicron gate GaAs/Al(0.3)Ga(0.7)AS MESFET''s with extremely sharp interfaces (40 A )

Submicron gate GaAs/Al(0.3)Ga(0.7)AS MESFET' s with extremely sharp interfaces (40 A )

Submicron gate GaAs/Al0.3Ga0.7AS MESFET's with extremely sharp interfaces (40 Å)

Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transitors

The influence of donor neutralization on the transfer characteristics of MODFET's at 77 K: Theory and experiment

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