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Punch-through in short-channel AlGaN/GaN HFETs
IEEE transactions on electron devices, 2006-02, Vol.53 (2), p.395-398
2006
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Extraction of Packaged GaN Power Transistors Parasitics Using S-Parameters
IEEE transactions on electron devices, 2019-06, Vol.66 (6), p.2583-2588
2019
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Effects of Self-Heating on Performance Degradation in AlGaN/GaN-Based Devices
IEEE transactions on electron devices, 2009-10, Vol.56 (10), p.2178-2185
2009
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Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design
IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3216-3222
2013
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On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates
IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.547-556
2008
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Electrical TCAD Simulations of a Germanium pMOSFET Technology
IEEE transactions on electron devices, 2010-10, Vol.57 (10), p.2539-2546
2010
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Identification of Electrically Stressed Regions in AlGaN/GaN-on-Si Schottky Barrier Diode Using EBIC Technique
IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.216-221
2021
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Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p +/n Junctions
IEEE transactions on electron devices, 2008-09, Vol.55 (9), p.2287-2296
2008
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Reliability Improvements in AlGaN/GaN Schottky Barrier Diodes With a Gated Edge Termination
IEEE transactions on electron devices, 2018-05, Vol.65 (5), p.1765-1770
2018
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High-Performance Deep Submicron Ge pMOSFETs With Halo Implants
IEEE transactions on electron devices, 2007-09, Vol.54 (9), p.2503-2511
2007
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Analysis of Thermal Effect Influence in Gallium-Nitride-Based TLM Structures by Means of a Transport-Thermal Modeling
IEEE transactions on electron devices, 2006-09, Vol.53 (9), p.2237-2242
2006
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Fabrication, Characterization, and Physical Analysis of AlGaN/GaN HEMTs on Flexible Substrates
IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1054-1059
2013
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AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification
IEEE transactions on electron devices, 2007-11, Vol.54 (11), p.2843-2848
2007
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Influence of GaN- and Si 3 N 4 -Passivation Layers on the Performance of AlGaN/GaN Diodes With a Gated Edge Termination
IEEE transactions on electron devices, 2019-02, Vol.66 (2), p.883-889
2019
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Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate
IEEE transactions on electron devices, 2016-03, Vol.63 (3), p.997-1004
2016
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Influence of GaN- and Si3N4-Passivation Layers on the Performance of AlGaN/GaN Diodes With a Gated Edge Termination
IEEE transactions on electron devices, 2019-02, Vol.66 (2), p.883-889
2019
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Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
IEEE transactions on electron devices, 2016-05, Vol.63 (5), p.1853-1860
2016
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Quantification of Drain Extension Leakage in a Scaled Bulk Germanium PMOS Technology
IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.3115-3122
2009
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Optimization of Al0.29Ga0.71N/GaN high electron mobility heterostructures for high-power/frequency performances
IEEE transactions on electron devices, 2013, Vol.60, p.3105-3111
2013
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Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination
IEEE transactions on electron devices, 2016-09, Vol.63 (9), p.3451-3458
2016
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Low-Frequency Noise Characterization of Strained Germanium pMOSFETs
IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.3132-3139
2011
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AlGaN/GaN HEMTs on (001) Silicon Substrate With Power Density Performance of 2.9 W/mm at 10 GHz
IEEE transactions on electron devices, 2010-07, Vol.57 (7), p.1497-1503
2010
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Proposal and performance analysis of normally off n++ GaN/InAlN/AlN/GaN HEMTs with 1-nm-thick InAlN barrier
IEEE transactions on electron devices, 2010-09, Vol.57, p.2144-2154
2010
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Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs
IEEE transactions on electron devices, 2009-05, Vol.56 (5), p.1063-1069
2009
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Optimization of / High Electron Mobility Heterostructures for High-Power/Frequency Performances
IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3105-3111
2013
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