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Monolithic integration of a planar embedded InGaAs p-i-n detector with InP depletion-mode FET's
IEEE transactions on electron devices, 1985-01, Vol.32 (11), p.2319-2321
1985
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InGaAs/InAlAs heterostructure diodes for application to high-speed semiconductor-gated FET's
IEEE transactions on electron devices, 1986-11, Vol.33 (11), p.1640-1643
1986
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Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS2 Channel Transistors
IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6680-6686
2023
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Fabrication of large-scaled organic light emitting devices on the flexible substrates using low-pressure imprinting lithography
IEEE transactions on electron devices, 2005-08, Vol.52 (8), p.1722-1726
2005
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Modeling and optimization of substrate resistance for RF-CMOS
IEEE transactions on electron devices, 2004-03, Vol.51 (3), p.421-426
2004
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InGaN/GaN light emitting diodes with a p-down structure
IEEE transactions on electron devices, 2002-08, Vol.49 (8), p.1361-1366
2002
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Nitride Nanocolumns for the Development of Light-Emitting Diode
IEEE transactions on electron devices, 2010-01, Vol.57 (1), p.71-78
2010
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Modeling mechanical stress effect on dopant diffusion in scaled MOSFETs
IEEE transactions on electron devices, 2005-01, Vol.52 (1), p.30-38
2005
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Characterization of AC Hot-Carrier Effects in Poly-Si Thin-Film Transistors
IEEE transactions on electron devices, 2009-11, Vol.56 (11), p.2664-2669
2009
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Gate-voltage-dependent effective channel length and series resistance of LDD MOSFET's
IEEE transactions on electron devices, 1987-12, Vol.34 (12), p.2469-2475
1987
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high-performance and high-reliability 80-nm gate-length DTMOS with indium super steep retrograde channel
IEEE transactions on electron devices, 2000-12, Vol.47 (12), p.2379-2384
2000
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MOSFET degradation due to stressing of thin oxide
IEEE transactions on electron devices, 1984-09, Vol.31 (9), p.1238-1244
1984
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Plasma-induced charging damage in ultrathin (3-nm) gate oxides
IEEE transactions on electron devices, 2000-07, Vol.47 (7), p.1355-1360
2000
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Improved low temperature characteristics of P-channel MOSFETs with Si1-xGex raised source and drain
IEEE transactions on electron devices, 2001-08, Vol.48 (8), p.1627
2001
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Novel AlInAsSb/InGaAs heterostructure for double-barrier resonant tunneling diode
IEEE transactions on electron devices, 2000-04, Vol.47 (4), p.895-897
2000
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