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Punch-through in short-channel AlGaN/GaN HFETs

IEEE transactions on electron devices, 2006-02, Vol.53 (2), p.395-398

2006

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Effects of Self-Heating on Performance Degradation in AlGaN/GaN-Based Devices

IEEE transactions on electron devices, 2009-10, Vol.56 (10), p.2178-2185

2009

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On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.547-556

2008

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Electrical TCAD Simulations of a Germanium pMOSFET Technology

IEEE transactions on electron devices, 2010-10, Vol.57 (10), p.2539-2546

2010

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Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p +/n Junctions

IEEE transactions on electron devices, 2008-09, Vol.55 (9), p.2287-2296

2008

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High-Performance Deep Submicron Ge pMOSFETs With Halo Implants

IEEE transactions on electron devices, 2007-09, Vol.54 (9), p.2503-2511

2007

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Analysis of Thermal Effect Influence in Gallium-Nitride-Based TLM Structures by Means of a Transport-Thermal Modeling

IEEE transactions on electron devices, 2006-09, Vol.53 (9), p.2237-2242

2006

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AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification

IEEE transactions on electron devices, 2007-11, Vol.54 (11), p.2843-2848

2007

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Quantification of Drain Extension Leakage in a Scaled Bulk Germanium PMOS Technology

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.3115-3122

2009

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Low-Frequency Noise Characterization of Strained Germanium pMOSFETs

IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.3132-3139

2011

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Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs

IEEE transactions on electron devices, 2009-05, Vol.56 (5), p.1063-1069

2009

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Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design : GaN ELECTRONIC DEVICES

IEEE transactions on electron devices, 2013, Vol.60 (10), p.3216-3222

2013

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Optimization of Al0.29Ga0.71N/GaN High Electron Mobility Heterostructures for High-Power/Frequency Performances : GaN ELECTRONIC DEVICES

IEEE transactions on electron devices, 2013, Vol.60 (10), p.3105-3111

2013

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Proposal and Performance Analysis of Normally Off n++ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN B arrier

IEEE transactions on electron devices, 2010, Vol.57 (9), p.2144-2154

2010

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Anomalies in MODFET's with a low-temperature buffer

IEEE transactions on electron devices, 1990-01, Vol.37 (1), p.46-50

1990

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High efficiency GaInAs/InP heterojunction IMPATT diodes

IEEE transactions on electron devices, 1983-07, Vol.30 (7), p.790-796

1983

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Punch-through in short-channel AlGaN/GaN HFETs

Effects of Self-Heating on Performance Degradation in AlGaN/GaN-Based Devices

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

Electrical TCAD Simulations of a Germanium pMOSFET Technology

Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p +/n Junctions

High-Performance Deep Submicron Ge pMOSFETs With Halo Implants

Analysis of Thermal Effect Influence in Gallium-Nitride-Based TLM Structures by Means of a Transport-Thermal Modeling

AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification

Quantification of Drain Extension Leakage in a Scaled Bulk Germanium PMOS Technology

Low-Frequency Noise Characterization of Strained Germanium pMOSFETs

Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs

Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design : GaN ELECTRONIC DEVICES

Optimization of Al0.29Ga0.71N/GaN High Electron Mobility Heterostructures for High-Power/Frequency Performances : GaN ELECTRONIC DEVICES

Proposal and Performance Analysis of Normally Off n++ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN B arrier

Anomalies in MODFET's with a low-temperature buffer

High efficiency GaInAs/InP heterojunction IMPATT diodes

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