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Thermally-enhanced remote plasma nitrided ultrathin (1.65 nm) gate oxide with excellent performances in reduction of leakage current and boron diffusion

IEEE electron device letters, 2001-08, Vol.22 (8), p.378-380

2001

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High-quality ultrathin (1.6 nm) nitride/oxide stack gate dielectrics prepared by combining remote plasma nitridation and LPCVD technologies

IEEE electron device letters, 2001-06, Vol.22 (6), p.260-262

2001

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The effect of remote plasma nitridation on the integrity of the ultrathin gate dielectric films in 0.13 μm CMOS technology and beyond

IEEE electron device letters, 2001-07, Vol.22 (7), p.327-329

2001

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Improvement of short-channel characteristics of a 0.1-[micro]m PMOSFET with ultralow-temperature nitride spacer by using a novel oxide capped boron uphill treatment

IEEE electron device letters, 2003-01, Vol.24 (1), p.43

2003

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Improvement of short-channel characteristics of a 0.1-/spl mu/m PMOSFET with ultralow-temperature nitride spacer by using a novel oxide capped boron uphill treatment

IEEE electron device letters, 2003-01, Vol.24 (1), p.43-45

2003

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The effect of remote plasma nitridation on the integrity of the ultrathin gate dielectric films in 0.13 [micro]m CMOS technology and beyond

IEEE electron device letters, 2001-07, Vol.22 (7), p.327

2001

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Improvement of short-channel characteristics of a 0.1-μm PMOSFET with ultralow-temperature nitride spacer by using a novel oxide capped boron uphill treatment

IEEE electron device letters, 2003-01, Vol.24 (1), p.43-45

2003

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Schottky-barrier S/D MOSFETs with high-k gate dielectrics and metal-gate electrode

IEEE electron device letters, 2004-05, Vol.25 (5), p.268-270

2004

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Physical and electrical characteristics of HfN gate electrode for advanced MOS devices

IEEE electron device letters, 2003-04, Vol.24 (4), p.230-232

2003

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Fast DNBTI components in p-MOSFET with SiON dielectric

IEEE electron device letters, 2005-11, Vol.26 (11), p.826-828

2005

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Fully silicided NiSi and germanided NiGe dual gates on SiO2 n- and p-MOSFETs

IEEE electron device letters, 2003-12, Vol.24 (12), p.739-741

2003

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Al2O3-Ge-on-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gates

IEEE electron device letters, 2004-03, Vol.25 (3), p.138

2004

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Fully silicided NiSi and germanided NiGe dual gates on SiO 2 n- and p-MOSFETs

IEEE electron device letters, 2003-12, Vol.24 (12), p.739-741

2003

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MOS C-V characterization of ultrathin gate oxide thickness (1.3-1.8 nm)

IEEE electron device letters, 1999-06, Vol.20 (6), p.292-294

1999

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Reduction of Leakage and Low-Frequency Noise in MOS Transistors Through Two-Step RTA of NiSi-Silicide Technology

IEEE electron device letters, 2006-10, Vol.27 (10), p.824-826

2006

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High work function IrxSi gates on HfAlON p-MOSFETs

IEEE electron device letters, 2006-02, Vol.27 (2), p.90-92

2006

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Thermally robust TaTbxN metal gate electrode for n-MOSFETs applications

IEEE electron device letters, 2005-02, Vol.26 (2), p.75-77

2005

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hbox Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode

IEEE electron device letters, 2009-07, Vol.30 (7), p.703-705

2009

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[Formula Omitted] Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode

IEEE electron device letters, 2009-07, Vol.30 (7), p.703

2009

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Robust high-quality HfN-HfO2 gate stack for advanced MOS device applications

IEEE electron device letters, 2004-02, Vol.25 (2), p.70

2004

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Thermally robust TaTb/sub x/N metal gate electrode for n-MOSFETs applications

IEEE electron device letters, 2005-02, Vol.26 (2), p.75-77

2005

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High work function Ir/sub x/Si gates on HfAlON p-MOSFETs

IEEE electron device letters, 2006-02, Vol.27 (2), p.90-92

2006

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Robust High-Quality HfN–>tex<$hbox HfO_2$>/tex<Gate Stack for Advanced MOS Device Applications

IEEE electron device letters, 2004-02, Vol.25 (2), p.70-72

2004

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Al/sub 2/O/sub 3/-Ge-on-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gates

IEEE electron device letters, 2004-03, Vol.25 (3), p.138-140

2004

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hbox Al_2hbox O_3$ –Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual Gates

IEEE electron device letters, 2004-03, Vol.25 (3), p.138-140

2004

Volltextzugriff (PDF)

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Thermally-enhanced remote plasma nitrided ultrathin (1.65 nm) gate oxide with excellent performances in reduction of leakage current and boron diffusion

High-quality ultrathin (1.6 nm) nitride/oxide stack gate dielectrics prepared by combining remote plasma nitridation and LPCVD technologies

The effect of remote plasma nitridation on the integrity of the ultrathin gate dielectric films in 0.13 μm CMOS technology and beyond

Improvement of short-channel characteristics of a 0.1-[micro]m PMOSFET with ultralow-temperature nitride spacer by using a novel oxide capped boron uphill treatment

Improvement of short-channel characteristics of a 0.1-/spl mu/m PMOSFET with ultralow-temperature nitride spacer by using a novel oxide capped boron uphill treatment

The effect of remote plasma nitridation on the integrity of the ultrathin gate dielectric films in 0.13 [micro]m CMOS technology and beyond

Improvement of short-channel characteristics of a 0.1-μm PMOSFET with ultralow-temperature nitride spacer by using a novel oxide capped boron uphill treatment

Schottky-barrier S/D MOSFETs with high-k gate dielectrics and metal-gate electrode

Physical and electrical characteristics of HfN gate electrode for advanced MOS devices

Fast DNBTI components in p-MOSFET with SiON dielectric

Fully silicided NiSi and germanided NiGe dual gates on SiO2 n- and p-MOSFETs

Al2O3-Ge-on-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gates

Fully silicided NiSi and germanided NiGe dual gates on SiO 2 n- and p-MOSFETs

MOS C-V characterization of ultrathin gate oxide thickness (1.3-1.8 nm)

Reduction of Leakage and Low-Frequency Noise in MOS Transistors Through Two-Step RTA of NiSi-Silicide Technology

High work function IrxSi gates on HfAlON p-MOSFETs

Thermally robust TaTbxN metal gate electrode for n-MOSFETs applications

hbox Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode

[Formula Omitted] Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode

Robust high-quality HfN-HfO2 gate stack for advanced MOS device applications

Thermally robust TaTb/sub x/N metal gate electrode for n-MOSFETs applications

High work function Ir/sub x/Si gates on HfAlON p-MOSFETs

Robust High-Quality HfN–>tex<$hbox HfO_2$>/tex<Gate Stack for Advanced MOS Device Applications

Al/sub 2/O/sub 3/-Ge-on-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gates

hbox Al_2hbox O_3$ –Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual Gates

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