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Dielectric Layer Design of Bilayer Ferroelectric and Antiferroelectric Tunneling Junctions Toward 3D NAND-Compatible Architecture
IEEE electron device letters, 2022-11, Vol.43 (11), p.1-1
2022
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Experimental Insights of Reverse Switching Charge for Antiferroelectric Hf₀.₁Zr₀.₉O
IEEE electron device letters, 2022-09, Vol.43 (9), p.1559-1562
2022
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Comparison of Uniaxial Wafer Bending and Contact-Etch-Stop-Liner Stress Induced Performance Enhancement on Double-Gate FinFETs
IEEE electron device letters, 2008-05, Vol.29 (5), p.480-482
2008
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Ultra-thin decoupled plasma nitridation (DPN) oxynitride gate dielectric for 80-nm advanced technology
IEEE electron device letters, 2002-12, Vol.23 (12), p.704-706
2002
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New Hot-Carrier Injection Mechanism at Source Side in Nanoscale Floating-Body MOSFETs
IEEE electron device letters, 2009-01, Vol.30 (1), p.54-56
2009
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Investigation of Bulk Traps Enhanced Gate-Induced Leakage Current in Hf-Based MOSFETs
IEEE electron device letters, 2008-05, Vol.29 (5), p.509-511
2008
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Light guide for pixel crosstalk improvement in deep submicron CMOS image sensor
IEEE electron device letters, 2004-01, Vol.25 (1), p.22-24
2004
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An effective method to improve the sensitivity of deep submicrometer CMOS image sensors
IEEE electron device letters, 2005-08, Vol.26 (8), p.547-549
2005
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Dramatic reduction of optical crosstalk in deep-submicrometer CMOS imager with air gap guard ring
IEEE electron device letters, 2004-06, Vol.25 (6), p.375-377
2004
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A high-efficiency CMOS image sensor with air gap in situ MicroLens (AGML) fabricated by 0.18-μm CMOS technology
IEEE electron device letters, 2005-09, Vol.26 (9), p.634-636
2005
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Color mixing improvement of CMOS image sensor with air-gap-guard ring in deep-submicrometer CMOS technology
IEEE electron device letters, 2005-05, Vol.26 (5), p.301-303
2005
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High-performance, graded-base AlGaAs/InGaAs collector-up heterojunction bipolar transistors using a novel selective area regrowth process
IEEE electron device letters, 1999-06, Vol.20 (6), p.271-273
1999
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A Study of Strain Engineering Using CESL Stressor on Reliability Comparing Effect of Intrinsic Mechanical Stress
IEEE electron device letters, 2009-07, Vol.30 (7), p.760-762
2009
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Investigation of inductively coupled plasma gate oxide on low temperature polycrystalline-silicon TFTs
IEEE electron device letters, 2002-06, Vol.23 (6), p.333-335
2002
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Regenerative switching characteristics of a novel electrical or optical base-controlled AlGaAs/GaAs quantum-well heterojunction bipolar transistor
IEEE electron device letters, 1991-10, Vol.12 (10), p.568-570
1991
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Demonstration of High-Performance PMOSFETs Using Si-SixrGe1-x-Si Quantum Wells With High-K/Metal-Gate Stacks
IEEE electron device letters, 2008, Vol.29 (1), p.99-101
2008
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psub guard ring design and modeling for the purpose of substrate noise isolation in the SOC era
IEEE electron device letters, 2005-09, Vol.26 (9), p.693-695
2005
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Demonstration of High-Performance PMOSFETs Using \hbox- \hbox\hbox - \hbox Quantum Wells With High- \kappa/Metal-Gate Stacks
IEEE electron device letters, 2008-01, Vol.29 (1), p.99-101
2008
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Demonstration of High-Performance PMOSFETs Using [Formula Omitted]-[Formula Omitted] -[Formula Omitted] Quantum Wells With High- [Formula Omitted]/Metal-Gate Stacks
IEEE electron device letters, 2008-01, Vol.29 (1), p.99
2008
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The mechanism and evaluation of hot-carrier-induced performance degradation in 0.18-μm CMOS image sensor
IEEE electron device letters, 2004-06, Vol.25 (6), p.427-429
2004
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Hot-carrier effects on power characteristics of SiGe HBTs
IEEE electron device letters, 2004-06, Vol.25 (6), p.393-395
2004
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Study of nickel silicide contact on Si/Si1-xGex
IEEE electron device letters, 2003-09, Vol.24 (9), p.544-546
2003
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A high speed tapped CCD photodiode linear image sensor
IEEE electron device letters, 1981-10, Vol.2 (10), p.257-259
1981
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High-density and reduced latchup susceptibility CMOS technology for VLSI
IEEE electron device letters, 1983-07, Vol.4 (7), p.233-235
1983
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A high-efficiency CMOS image sensor with air gap in situ MicroLens (AGML) fabricated by 0.18-mum CMOS technology
IEEE electron device letters, 2005-09, Vol.26 (9), p.634-636
2005
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