UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Method to Achieve the Morphotropic Phase Boundary in HfxZr1−xO2 by Electric Field Cycling for DRAM Cell Capacitor Applications

IEEE electron device letters, 2021-04, Vol.42 (4), p.517-520

2021

Volltextzugriff (PDF)

Physical Reservoir based on a Leaky-FeFET Using the Temporal Memory Effect

IEEE electron device letters, 2024-01, Vol.45 (1), p.1-1

2024

Volltextzugriff (PDF)

Dual-Mechanism Memory Combining Charge Trapping and Polarization Switching for Wide Memory Window Flash Cell

IEEE electron device letters, 2023-07, Vol.44 (7), p.1-1

2023

Volltextzugriff (PDF)

Lanthanum Oxide Surface Treatment to Form Diffusion Barrier and Interface Dipoles on Ferroelectric FET

IEEE electron device letters, 2024-10, Vol.45 (10), p.1796-1799

2024

Volltextzugriff (PDF)

A Novel Split-Gate Ferroelectric FET for a Compact and Energy Efficient Neuron

IEEE electron device letters, 2022-08, Vol.43 (8), p.1375-1378

2022

Volltextzugriff (PDF)

First Demonstration of a Logic-Process Compatible Junctionless Ferroelectric FinFET Synapse for Neuromorphic Applications

IEEE electron device letters, 2018-09, Vol.39 (9), p.1445-1448

2018

Volltextzugriff (PDF)

A Band-Engineered One-Transistor DRAM With Improved Data Retention and Power Efficiency

IEEE electron device letters, 2019-04, Vol.40 (4), p.562-565

2019

Volltextzugriff (PDF)

Large Grain Ruthenium for Alternative Interconnects

IEEE electron device letters, 2019-01, Vol.40 (1), p.91-94

2019

Volltextzugriff (PDF)

A Novel Structured Single Device Neuron for Low Standby Power and Compact System Application

IEEE electron device letters, 2023-03, Vol.44 (3), p.1-1

2023

Volltextzugriff (PDF)

Flexible Resistive Switching Memory Device Based on Graphene Oxide

IEEE electron device letters, 2010-09, Vol.31 (9), p.1005-1007

2010

Volltextzugriff (PDF)

Channel Mobility Boosting in a Poly-Si Channel Using Ge Diffusion Engineering and Hydrogen Plasma Treatment

IEEE electron device letters, 2022-03, Vol.43 (3), p.342-345

2022

Volltextzugriff (PDF)

Full-Swing a-IGZO Inverter With a Depletion Load Using Negative Bias Instability Under Light Illumination

IEEE electron device letters, 2012-12, Vol.33 (12), p.1726-1728

2012

Volltextzugriff (PDF)

Improvement of Thermal Stability in Dual Mechanism Memory using HfxAl1-xO Blocking Layer for 3D V-NAND Flash Application

IEEE electron device letters, 2024-09, p.1-1

2024

Volltextzugriff (PDF)

Improvement of Thermal Stability in Dual Mechanism Memory using Hf x Al 1-x O Blocking Layer for 3D V-NAND Flash Application

IEEE electron device letters, 2024, p.1-1

2024

Volltextzugriff (PDF)

Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal-Interlayer-n-Germanium Source/Drain Structure

IEEE electron device letters, 2016-06, Vol.37 (6), p.709-712

2016

Volltextzugriff (PDF)

H2 High Pressure Annealed Y-Doped ZrO2 Gate Dielectric With an EOT of 0.57 nm for Ge MOSFETs

IEEE electron device letters, 2019-09, Vol.40 (9), p.1350-1353

2019

Volltextzugriff (PDF)

First Demonstration of Junctionless Accumulation-Mode Bulk FinFETs With Robust Junction Isolation

IEEE electron device letters, 2013-12, Vol.34 (12), p.1479-1481

2013

Volltextzugriff (PDF)

Design and Electrical Characterization of 2-T Thyristor RAM With Low Power Consumption

IEEE electron device letters, 2018-03, Vol.39 (3), p.355-358

2018

Volltextzugriff (PDF)

Surface Passivation of Germanium Using SF6 Plasma to Reduce Source/Drain Contact Resistance in Germanium n-FET

IEEE electron device letters, 2015-08, Vol.36 (8), p.745-747

2015

Volltextzugriff (PDF)

Method to Achieve the Morphotropic Phase Boundary in Hf x Zr 1−x O 2 by Electric Field Cycling for DRAM Cell Capacitor Applications

IEEE electron device letters, 2021-04, Vol.42 (4), p.517-520

2021

Volltextzugriff (PDF)

Multi-Level Threshold Voltage Setting Method of String Select Transistors for Layer Selection in Channel Stacked NAND Flash Memory

IEEE electron device letters, 2015-12, Vol.36 (12), p.1318-1320

2015

Volltextzugriff (PDF)

Channel-Stacked NAND Flash Memory With Tied Bit-Line and Ground Select Transistor

IEEE electron device letters, 2016-11, Vol.37 (11), p.1418-1421

2016

Volltextzugriff (PDF)

The Mechanism of Schottky Barrier Modulation of Tantalum Nitride/Ge Contacts

IEEE electron device letters, 2015-10, Vol.36 (10), p.997-1000

2015

Volltextzugriff (PDF)

The Efficacy of Metal-Interfacial Layer-Semiconductor Source/Drain Structure on Sub-10-nm n-Type Ge FinFET Performances

IEEE electron device letters, 2014-12, Vol.35 (12), p.1185-1187

2014

Volltextzugriff (PDF)

Characteristics of Elliptical Gate-All-Around SONOS Nanowire With Effective Circular Radius

IEEE electron device letters, 2012-11, Vol.33 (11), p.1613-1615

2012

Volltextzugriff (PDF)

1 – 25 von 113

Suche als RSS-Feed

Aktive Filter

Zeitschrift / SerieIeee Electron Device Letters

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(113)
Mit Volltextzugriff
(113)

Publikationsform

Artikel
(113)

Sprache

Englisch
(113)

Erscheinungsjahr

n.n

Thema

Engineering
(47)
Engineering, Electrical & Electronic
(47)
Science & Technology
(47)
Technology
(47)
Leakage Current
(27)
Hafnium Oxide
(26)
Dielectrics
(25)
Applied Sciences
(22)
Electronics
(22)
Exact Sciences And Technology
(22)
Capacitance
(21)
Semiconductor Electronics. Microelectronics. Optoelectronics. Solid State Devices
(19)
Silicon
(18)
Gates
(15)
Logic Gates
(15)
Transistors
(15)
Voltage
(15)
Annealing
(14)
Capacitors
(14)
Mim Capacitors
(12)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

Neu hinzugefügt

... seit 30 Tagen
(2)
... seit 90 Tagen
(3)

Menü

Weitere Dienste

Einstellungen

Method to Achieve the Morphotropic Phase Boundary in HfxZr1−xO2 by Electric Field Cycling for DRAM Cell Capacitor Applications

Physical Reservoir based on a Leaky-FeFET Using the Temporal Memory Effect

Dual-Mechanism Memory Combining Charge Trapping and Polarization Switching for Wide Memory Window Flash Cell

Lanthanum Oxide Surface Treatment to Form Diffusion Barrier and Interface Dipoles on Ferroelectric FET

A Novel Split-Gate Ferroelectric FET for a Compact and Energy Efficient Neuron

First Demonstration of a Logic-Process Compatible Junctionless Ferroelectric FinFET Synapse for Neuromorphic Applications

A Band-Engineered One-Transistor DRAM With Improved Data Retention and Power Efficiency

Large Grain Ruthenium for Alternative Interconnects

A Novel Structured Single Device Neuron for Low Standby Power and Compact System Application

Flexible Resistive Switching Memory Device Based on Graphene Oxide

Channel Mobility Boosting in a Poly-Si Channel Using Ge Diffusion Engineering and Hydrogen Plasma Treatment

Full-Swing a-IGZO Inverter With a Depletion Load Using Negative Bias Instability Under Light Illumination

Improvement of Thermal Stability in Dual Mechanism Memory using HfxAl1-xO Blocking Layer for 3D V-NAND Flash Application

Improvement of Thermal Stability in Dual Mechanism Memory using Hf x Al 1-x O Blocking Layer for 3D V-NAND Flash Application

Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal-Interlayer-n-Germanium Source/Drain Structure

H2 High Pressure Annealed Y-Doped ZrO2 Gate Dielectric With an EOT of 0.57 nm for Ge MOSFETs

First Demonstration of Junctionless Accumulation-Mode Bulk FinFETs With Robust Junction Isolation

Design and Electrical Characterization of 2-T Thyristor RAM With Low Power Consumption

Surface Passivation of Germanium Using SF6 Plasma to Reduce Source/Drain Contact Resistance in Germanium n-FET

Method to Achieve the Morphotropic Phase Boundary in Hf x Zr 1−x O 2 by Electric Field Cycling for DRAM Cell Capacitor Applications

Multi-Level Threshold Voltage Setting Method of String Select Transistors for Layer Selection in Channel Stacked NAND Flash Memory

Channel-Stacked NAND Flash Memory With Tied Bit-Line and Ground Select Transistor

The Mechanism of Schottky Barrier Modulation of Tantalum Nitride/Ge Contacts

The Efficacy of Metal-Interfacial Layer-Semiconductor Source/Drain Structure on Sub-10-nm n-Type Ge FinFET Performances

Characteristics of Elliptical Gate-All-Around SONOS Nanowire With Effective Circular Radius

Aktive Filter

Suchergebnisse filtern