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A Center-Offset Polycrystalline-Silicon Thin-Film Transistor With n+ Amorphous-Silicon Contacts

IEEE electron device letters, 2009, Vol.30 (1), p.36-38

2009

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Subthreshold Degradation of Gate-all-Around Silicon Nanowire Field-Effect Transistors: Effect of Interface Trap Charge

IEEE electron device letters, 2011-09, Vol.32 (9), p.1179-1181

2011

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Characterization and Modeling of RF-Performance (f) Fluctuation in MOSFETs

IEEE electron device letters, 2009-08, Vol.30 (8), p.855-857

2009

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Single-Scan Monochromatic Photonic Capacitance-Voltage Technique for Extraction of Subgap DOS Over the Bandgap in Amorphous Semiconductor TFTs

IEEE electron device letters, 2013-12, Vol.34 (12), p.1524-1526

2013

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Light Trapping in Single Coaxial Nanowires for Photovoltaic Applications

IEEE electron device letters, 2011-01, Vol.32 (1), p.45-47

2011

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RF Model of BEOL Vertical Natural Capacitor (VNCAP) Fabricated by 45-nm RF CMOS Technology and Its Verification

IEEE electron device letters, 2009-05, Vol.30 (5), p.538-540

2009

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Dual Gate ZnO-Based Thin-Film Transistors Operating at 5 V: nor Gate Application

IEEE electron device letters, 2009-01, Vol.30 (1), p.30-32

2009

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High-Speed 501-Stage DCFL GaN Ring Oscillator Circuits

IEEE electron device letters, 2013-07, Vol.34 (7), p.846-848

2013

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High switching performance 0.1-μm metamorphic HEMTs for low conversion loss 94-GHz resistive mixers

IEEE electron device letters, 2005-10, Vol.26 (10), p.707-709

2005

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Large-Area Polymeric Microplasma Devices With Elongated Lifetime for Flexible Display and Photonic Applications

IEEE electron device letters, 2014-07, Vol.35 (7), p.765-767

2014

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Low-Frequency Noise of nc-Si:H/c-Si Heterojunction Diodes

IEEE electron device letters, 2012-02, Vol.33 (2), p.251-253

2012

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High-Mobility TaN/Al2O3/Ge(111) n-MOSFETs With RTO-Grown Passivation Layer

IEEE electron device letters, 2010-11, Vol.31 (11), p.1208-1210

2010

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Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs

IEEE electron device letters, 2000-09, Vol.21 (9), p.445-447

2000

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Behaviors of Emission Wavelength Shift in AlInGaN-Based Green Laser Diodes

IEEE electron device letters, 2008-08, Vol.29 (8), p.870-872

2008

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New Hot-Carrier Injection Mechanism at Source Side in Nanoscale Floating-Body MOSFETs

IEEE electron device letters, 2009-01, Vol.30 (1), p.54-56

2009

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Guard-Ring Structures for Silicon Photomultipliers

IEEE electron device letters, 2010-01, Vol.31 (1), p.41-43

2010

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Improved ge surface passivation with ultrathin SiOx enabling high-mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack

IEEE electron device letters, 2007-04, Vol.28 (4), p.308-311

2007

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Highly thermal robust NiSi for nanoscale MOSFETs utilizing a novel hydrogen plasma immersion ion implantation and Ni-Co-TiN tri-layer

IEEE electron device letters, 2005-02, Vol.26 (2), p.90-92

2005

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Fabrication of 50-nm gate SOI n-MOSFETs using novel plasma-doping technique

IEEE electron device letters, 2004-06, Vol.25 (6), p.366-368

2004

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A proposed single grain-boundary thin-film transistor

IEEE electron device letters, 2001-01, Vol.22 (1), p.20-22

2001

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A high-speed bipolar technology featuring self-aligned single-poly base and submicrometer emitter contacts

IEEE electron device letters, 1990-09, Vol.11 (9), p.412-414

1990

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High-gain pseudomorphic InGaAs base ballistic hot-electron device

IEEE electron device letters, 1989-02, Vol.10 (2), p.73-75, Article 73

1989

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Optimized breakdown probabilities in Al0.6Ga0.4As-GaAs heterojunction avalanche photodiodes

IEEE electron device letters, 2004-09, Vol.25 (9), p.599-601

2004

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Basic parameter measurement and channel broadening effect in the submicrometer MOSFET

IEEE electron device letters, 1984-11, Vol.5 (11), p.473-475

1984

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A high-endurance low-temperature polysilicon thin-film transistor EEPROM cell

IEEE electron device letters, 2000-06, Vol.21 (6), p.304-306

2000

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A Center-Offset Polycrystalline-Silicon Thin-Film Transistor With n+ Amorphous-Silicon Contacts

Subthreshold Degradation of Gate-all-Around Silicon Nanowire Field-Effect Transistors: Effect of Interface Trap Charge

Characterization and Modeling of RF-Performance (f) Fluctuation in MOSFETs

Single-Scan Monochromatic Photonic Capacitance-Voltage Technique for Extraction of Subgap DOS Over the Bandgap in Amorphous Semiconductor TFTs

Light Trapping in Single Coaxial Nanowires for Photovoltaic Applications

RF Model of BEOL Vertical Natural Capacitor (VNCAP) Fabricated by 45-nm RF CMOS Technology and Its Verification

Dual Gate ZnO-Based Thin-Film Transistors Operating at 5 V: nor Gate Application

High-Speed 501-Stage DCFL GaN Ring Oscillator Circuits

High switching performance 0.1-μm metamorphic HEMTs for low conversion loss 94-GHz resistive mixers

Large-Area Polymeric Microplasma Devices With Elongated Lifetime for Flexible Display and Photonic Applications

Low-Frequency Noise of nc-Si:H/c-Si Heterojunction Diodes

High-Mobility TaN/Al2O3/Ge(111) n-MOSFETs With RTO-Grown Passivation Layer

Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs

Behaviors of Emission Wavelength Shift in AlInGaN-Based Green Laser Diodes

New Hot-Carrier Injection Mechanism at Source Side in Nanoscale Floating-Body MOSFETs

Guard-Ring Structures for Silicon Photomultipliers

Improved ge surface passivation with ultrathin SiOx enabling high-mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack

Highly thermal robust NiSi for nanoscale MOSFETs utilizing a novel hydrogen plasma immersion ion implantation and Ni-Co-TiN tri-layer

Fabrication of 50-nm gate SOI n-MOSFETs using novel plasma-doping technique

A proposed single grain-boundary thin-film transistor

A high-speed bipolar technology featuring self-aligned single-poly base and submicrometer emitter contacts

High-gain pseudomorphic InGaAs base ballistic hot-electron device

Optimized breakdown probabilities in Al0.6Ga0.4As-GaAs heterojunction avalanche photodiodes

Basic parameter measurement and channel broadening effect in the submicrometer MOSFET

A high-endurance low-temperature polysilicon thin-film transistor EEPROM cell

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