UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Frequency performance enhancement of AlGaN/GaN HEMTs on diamond

Electronics letters, 2009, Vol.45 (14), p.758-759

2009

Volltextzugriff (PDF)

Effect of surface passivation of AlGaN∕GaN heterostructure field-effect transistor

Electronics letters, 2002-04, Vol.38 (8), p.388-389

2002

Volltextzugriff (PDF)

Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency

Electronics letters, 1996-01, Vol.32 (4), p.357

1996

Volltextzugriff (PDF)

Stability of AlGaN∕GaN high-power HEMTs under DC and RF stresses

Electronics letters, 2004-09, Vol.40 (19), p.1229

2004

Volltextzugriff (PDF)

Frequency performance enhancement of AlGaN/GaN HEMTs on diamond

Electronics letters, 2009-07, Vol.45 (14), p.1-1

2009

Volltextzugriff (PDF)

Multiquantum well strained-layer lasers with improved low frequency response and very low damping

Electronics letters, 1992, Vol.28 (4), p.383-385

1992

Volltextzugriff (PDF)

Stability of AlGaN/GaN high-power HEMTs under DC and RF stresses

Electronics letters, 2004-09, Vol.40 (19), p.1-1

2004

Volltextzugriff (PDF)

Stability of AiGaN/GaN high-power HEMTs under DC and RF stresses

Electronics letters, 2004, Vol.40 (19), p.1229-1230

2004

Volltextzugriff (PDF)

Effect of surface passivation of AlGaN/GaN heterostructure field-effect transistor

Electronics letters, 2002-04, Vol.38 (8), p.1-1

2002

Volltextzugriff (PDF)

Electron velocity enhancement by planar-doped barrier source in GaAs vertical fet

Electronics letters, 1988, Vol.24 (22), p.1383-1384

1988

Volltextzugriff (PDF)

Observation of ballistic transport in hot-electron vertical FET spectrometer using ultrathin planar-doped barrier Launcher

Electronics letters, 1991-01, Vol.27 (13), p.1144-1145

1991

Volltextzugriff (PDF)

0.1 μm Gate length MODFETs with unity current gain cutoff frequency above 110 GHz

Electronics letters, 1988, Vol.24 (6), p.364-366

1988

Volltextzugriff (PDF)

Improved performance by optimised planar doped barrier launcher in GaAs vertical FET with very short channel width

Electronics letters, 1989-01, Vol.25 (21), p.1413-1414

1989

Volltextzugriff (PDF)

Transconductance dependence on gate length for GaAs gate SISFETs

Electronics letters, 1987-07, Vol.23 (15), p.800-801

1987

Volltextzugriff (PDF)

Self-aligned GaAs gate heterojunction sisfet

Electronics letters, 1987-01, Vol.23 (3), p.105-106

1987

Volltextzugriff (PDF)

Planar-doped barriers in GaAs by molecular beam epitaxy

Electronics letters, 1980-01, Vol.16 (22), p.836

1980

Volltextzugriff (PDF)

Microwave performance of 0.25 [micro sign]m doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures

Electronics letters, 1997, Vol.33 (7), p.637

1997

Volltextzugriff (PDF)

Integrated laser/phototransistor optoelectronic switching device by organometallic vapour phase epitaxy

Electronics letters, 1986-04, Vol.22 (9), p.454-456

1986

Volltextzugriff (PDF)

Vertical electron transistor (VET) in GaAs with a heterojunction (AlGaAs-GaAs) cathode

Electronics letters, 1984-02, Vol.20 (3), p.145-146

1984

Volltextzugriff (PDF)

High-speed GaAlAs-GaAs heterojunction bipolar transistors with near-ballistic operation

Electronics letters, 1983-02, Vol.19 (4), p.147-149

1983

Volltextzugriff (PDF)

Quarter-micron gate length microwave high electron mobility transistor

Electronics letters, 1983-10, Vol.19 (21), p.894-896

1983

Volltextzugriff (PDF)

Reduction of emitter thickness in AlGaAs/GaAs heterojunction bipolar transistor

Electronics letters, 1989-09, Vol.25 (12), p.802-803

1989

Volltextzugriff (PDF)

Novel vertical GaAS FET structure with submicrometre source-to-drain spacing

Electronics letters, 1983-11, Vol.19 (24), p.1021-1023

1983

Volltextzugriff (PDF)

Use of current controlled GaAs l.p.e. for optimum doping profiles in l.s.a. diodes

Electronics letters, 1978-02, Vol.14 (4), p.77-78

1978

Volltextzugriff (PDF)

High-speed GaAs heterojunction bipolar phototransistor grown by molecular beam epitaxy

Electronics letters, 1983-04, Vol.19 (8), p.278-280

1983

Volltextzugriff (PDF)

1 – 25 von 35

Suche als RSS-Feed

Aktive Filter

Zeitschrift / SerieElectronics Letters

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(35)

Publikationsform

Artikel
(35)

Sprache

Englisch
(35)
Japanisch
(1)

Erscheinungsjahr

n.n

Kollektion

1 weiteren anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Frequency performance enhancement of AlGaN/GaN HEMTs on diamond

Effect of surface passivation of AlGaN∕GaN heterostructure field-effect transistor

Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency

Stability of AlGaN∕GaN high-power HEMTs under DC and RF stresses

Frequency performance enhancement of AlGaN/GaN HEMTs on diamond

Multiquantum well strained-layer lasers with improved low frequency response and very low damping

Stability of AlGaN/GaN high-power HEMTs under DC and RF stresses

Stability of AiGaN/GaN high-power HEMTs under DC and RF stresses

Effect of surface passivation of AlGaN/GaN heterostructure field-effect transistor

Electron velocity enhancement by planar-doped barrier source in GaAs vertical fet

Observation of ballistic transport in hot-electron vertical FET spectrometer using ultrathin planar-doped barrier Launcher

0.1 μm Gate length MODFETs with unity current gain cutoff frequency above 110 GHz

Improved performance by optimised planar doped barrier launcher in GaAs vertical FET with very short channel width

Transconductance dependence on gate length for GaAs gate SISFETs

Self-aligned GaAs gate heterojunction sisfet

Planar-doped barriers in GaAs by molecular beam epitaxy

Microwave performance of 0.25 [micro sign]m doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures

Integrated laser/phototransistor optoelectronic switching device by organometallic vapour phase epitaxy

Vertical electron transistor (VET) in GaAs with a heterojunction (AlGaAs-GaAs) cathode

High-speed GaAlAs-GaAs heterojunction bipolar transistors with near-ballistic operation

Quarter-micron gate length microwave high electron mobility transistor

Reduction of emitter thickness in AlGaAs/GaAs heterojunction bipolar transistor

Novel vertical GaAS FET structure with submicrometre source-to-drain spacing

Use of current controlled GaAs l.p.e. for optimum doping profiles in l.s.a. diodes

High-speed GaAs heterojunction bipolar phototransistor grown by molecular beam epitaxy

Aktive Filter

Suchergebnisse filtern