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Computational Investigation of InxGa1-xN/InN Quantum-Dot Intermediate-Band Solar Cell
Chinese physics letters, 2011, Vol.28 (1), p.208-211
2011
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In Situ Electrical Resistivity and Hall Effect Measurement of β-HgS under High Pressure
Chinese physics letters, 2015, Vol.32 (1), p.118-120
2015
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A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor
Chinese physics letters, 2015-05, Vol.32 (5), p.166-169
2015
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Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN
Chinese physics letters, 2011-03, Vol.28 (3), p.037102
2011
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High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes
Chinese physics letters, 2014-06, Vol.31 (6), p.237-240
2014
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Hydrodynamic Effects on Surface Morphology Evolution of Titanium Alloy under Intense Pulsed Ion Beam Irradiation
Chinese physics letters, 2017-05, Vol.34 (5), p.84-87
2017
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Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors
Chinese physics letters, 2015-12, Vol.32 (12), p.113-116
2015
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Pressure Effects on the Charge Carrier Transportation of BaF2 Nanocrystals
中国物理快报：英文版, 2017-03, Vol.34 (4), p.68-70
2017
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Photonic Crystal Fiber Source of Quantum Correlated Photon Pairs in the 1550 nm Telecom Band
Chinese physics letters, 2009-04, Vol.26 (4), p.044209, Article 044209
2009
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Pressure Effects on the Charge Carrier Transportation of BaF 2 Nanocrystals
Chinese physics letters, 2017-03, Vol.34 (4), p.46401
2017
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Pressure Effects on the Charge Carrier Transportation of BaF2 Nanocrystals Supported by the National Natural Science Foundation of China under Grant Nos 11374131, 11674404, 11404137 and 61378085, the Program for New Century Excellent Talents in University under Grant No NCET-13-0824, the Program for the Development of Science and Technology of Jilin Province under Grant Nos 201201079 and 20150204085GX, and the Twentieth Five-Year Program for Science and Technology of Education Department of Jili
Chinese physics letters, 2017-03, Vol.34 (4)
2017
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Hydrodynamic Effects on Surface Morphology Evolution of Titanium Alloy under Intense Pulsed Ion Beam Irradiation Supported by the National Natural Science Foundation of China under Grant No 1175012, the China Postdoctoral Science Foundation under Grant No 2016M600897, and the National Science and Technology Major Project of the Ministry of Science and Technology of China under Grant No 2013ZX04001-071
Chinese physics letters, 2017-05, Vol.34 (5)
2017
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In Situ Electrical Resistivity and Hall Effect Measurement of [beta]-HgS under High Pressure
Chinese physics letters, 2015-01, Vol.32 (1), p.016402-1-016402-3
2015
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A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility TransistorSupported by the Knowledge Innovation Engineering of the Chinese Academy of Sciences under Grant No YYY-0701-02, the National Nature Science Foundation of China under Grant Nos 61106014, 61204017 and 61334002, the State Key Development Program for Basic Research of China under Grant No 2010CB327503, and the National Science and Technology Major Project of China
Chinese physics letters, 2015-05, Vol.32 (5)
2015
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Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect TransistorsSupported by the Knowledge Innovation Project of the Chinese Academy of Sciences, the National Natural Science Foundation of China under Grant Nos 61204017 and 61334002, the National Basic Research Program of China, and the National Science and Technology Major Project of China
Chinese physics letters, 2015-12, Vol.32 (12)
2015
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Field Dependence of π-Band Superconducting Gap in MgB2 Thin Films from Point-Contact Spectroscopy
Chinese physics letters, 2008-06, Vol.25, p.2228
2008
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Computational Investigation of In x Ga 1− x N/InN Quantum-Dot Intermediate-Band Solar Cell
Chinese physics letters, 2011-01, Vol.28 (1), p.18401
2011
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Characteristics of Gas Flow within a Micro Diffuser/Nozzle Pump
Chinese physics letters, 2006-05, Vol.23 (5), p.1230-1233
2006
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Field Dependence of π-Band Superconducting Gap in MgB 2 Thin Films from Point-Contact Spectroscopy
Chinese physics letters, 2008-06, Vol.25 (6), p.2228-2231
2008
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