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Novel copper redox-based cathode materials for room-temperature sodium-ion batteries

Chinese physics B, 2014-11, Vol.23 (11), p.107-110

徐淑银吴晓燕李云明胡勇胜陈立泉

2014

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Bilayer twisting as a mean to isolate connected flat bands in a kagome lattice throughWigner crystallization

Chinese physics B, 2021-07, Vol.30 (7), p.77104

2021

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Ab initio investigation of excited state dual hydrogen bonding interactions and proton transfer mechanism for novel oxazoline compound

Chinese physics B, 2019-10, Vol.28 (10), p.103105

2019

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Quantitative measurement of magnetic parameters by electron magnetic chiral dichroism

Chinese physics B, 2018-05, Vol.27 (5), p.56801

2018

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The etching of a-plane GaN epilayers grown metal-organic chemical vapour deposition

Chinese physics B, 2010-10, Vol.19 (10), p.458-462

2010

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Phase transition of solid bismuth under high pressure

Chinese physics B, 2016-10, Vol.25 (10), p.469-474

陈海燕向士凯颜小珍郑黎荣张毅刘盛刚毕延

2016

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Degradation of β-Ga2O3 Schottky barrier diode under swift heavy ion irradiation

中国物理B（英文版）, 2021-05, Vol.30 (5), p.113-118

2021

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The fabrication and characterization of 4H-SiC power UMOSFETs

Chinese physics B, 2013-02, Vol.22 (2), p.426-428, Article 027302

宋庆文张玉明韩吉胜 Philip Tanner Sima Dimitrijev 张义门汤晓燕郭辉

2013

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Carrier behavior of HgTe under high pressure revealed by Hall effect measurement

Chinese physics B, 2015-11, Vol.24 (11), p.363-366

胡廷静崔晓岩李雪飞王婧姝吕秀梅王棱升杨景海高春晓

2015

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Synergistic effects of neutron and gamma ray irradiation of a commercial CHMOS microcontroller

Chinese physics B, 2010-06, Vol.19 (6), p.429-436

金晓明范如玉陈伟林东生杨善潮白小燕刘岩郭晓强王桂珍

2010

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The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn3N2 precursors

中国物理B：英文版, 2017-11, Vol.26 (11), p.1-14

2017

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First-principles study on stability and superconductivity of ternary hydride LaYH x ( x = 2, 3, 6 and 8)

Chinese physics B, 2024-04

2024

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Bilayer twisting as a mean to isolate connected flat bands in a kagome lattice throughWigner crystallization Project supported by the National Natural Science Foundation of China (Grant No. 11874314). Sheng-Bai Zhang was supported by U.S. DOE under Grant No. DE-SC0002623

Chinese physics B, 2021-07, Vol.30 (7)

2021

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Ab initio investigation of excited state dual hydrogen bonding interactions and proton transfer mechanism for novel oxazoline compound Project supported by the National Natural Science Foundation of China (Grant No. 11404112), the Funding Scheme for Young Teachers in Colleges and Universities in Henan Province, China (Grant No. 2017GGJS077), and the Key Scientific Research Project of Colleges and Universities of Henan Province, China (Grant No. 18A140023)

Chinese physics B, 2019-10, Vol.28 (10)

2019

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Degradation of β-Ga 2 O 3 Schottky barrier diode under swift heavy ion irradiation

Chinese physics B, 2021-05, Vol.30 (5), p.56110

2021

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Degradation of β-Ga2O3 Schottky barrier diode under swift heavy ion irradiation Project supported by the National Natural Science Foundation of China (Grant Nos. 12035019, 11690041, and 12075290), China National Postdoctoral Program for Innovative Talents (Grant No. BX20200340), China Postdoctoral Science Foundation (Grant No. 2020M673539), CAS “Light of West China” Program, and the Youth Innovation Promotion Association of Chinese Academy of Sciences (CAS) (Grant No. 2020412)

Chinese physics B, 2021-05, Vol.30 (5)

2021

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Phase transition of solid bismuth under high pressureProject supported by the National Natural Science Foundation of China (Grant Nos. 10904133, 11304294, 11274281, 11404006, and U1230201), the Development Foundation of China Academy of Engineering Physics (Grant Nos. 2015B0101004, 2013B0401062, and 2012A0101001), the Research Foundation of the Laboratory of Shock Wave and Detonation, China (Grant No. 9140C670201140C67282)

Chinese physics B, 2016-10, Vol.25 (10)

2016

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Carrier behavior of HgTe under high pressure revealed by Hall effect measurementProject supported by the National Basic Research Program of China (Grant No. 2011CB808204), the National Natural Science Foundation of China (Grant Nos. 11374121, 51441006, and 51479220), the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 11404137), the Program for the Development of Science and Technology of Jilin province, China (Grant Nos. 201201079 and 201215222), the Twentie

Chinese physics B, 2015-10, Vol.24 (11)

2015

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The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn3N2 precursors Project supported by the National Natural Science Foundation of China (Grant No. 11474076)

Chinese physics B, 2017-10, Vol.26 (11)

2017

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The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn 3 N 2 precursors

Chinese physics B, 2017-10, Vol.26 (11), p.117101

2017

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Novel copper redox-based cathode materials for room-temperature sodium-ion batteries

Bilayer twisting as a mean to isolate connected flat bands in a kagome lattice throughWigner crystallization

Ab initio investigation of excited state dual hydrogen bonding interactions and proton transfer mechanism for novel oxazoline compound

Quantitative measurement of magnetic parameters by electron magnetic chiral dichroism

The etching of a-plane GaN epilayers grown metal-organic chemical vapour deposition

Phase transition of solid bismuth under high pressure

Degradation of β-Ga2O3 Schottky barrier diode under swift heavy ion irradiation

The fabrication and characterization of 4H-SiC power UMOSFETs

Carrier behavior of HgTe under high pressure revealed by Hall effect measurement

Synergistic effects of neutron and gamma ray irradiation of a commercial CHMOS microcontroller

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn3N2 precursors

First-principles study on stability and superconductivity of ternary hydride LaYH x ( x = 2, 3, 6 and 8)

Bilayer twisting as a mean to isolate connected flat bands in a kagome lattice throughWigner crystallization Project supported by the National Natural Science Foundation of China (Grant No. 11874314). Sheng-Bai Zhang was supported by U.S. DOE under Grant No. DE-SC0002623

Degradation of β-Ga 2 O 3 Schottky barrier diode under swift heavy ion irradiation

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn3N2 precursors Project supported by the National Natural Science Foundation of China (Grant No. 11474076)

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn 3 N 2 precursors

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