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Acoustic longitudinal mode coupling in w-shaped Al/Ge Co-doped fibre

Chinese physics B, 2011-10, Vol.20 (10), p.281-289

2011

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Atlas of dynamic spectra of fast radio burst FRB 20201124A

Chinese physics B, 2023-02, Vol.32 (2), p.29801-4

2023

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Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes

Chinese physics B, 2018-02, Vol.27 (2), p.588-593

2018

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Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift

Chinese physics B, 2020-03, Vol.29 (3), p.34206

2020

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Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials

Chinese physics B, 2017-06, Vol.26 (7), p.311-315

杨静赵德刚江德生陈平刘宗顺朱建军李翔刘炜梁锋张立群杨辉王文杰李沫

2017

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Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths

Chinese physics B, 2017, Vol.26 (1), p.498-502

李翔赵德刚江德生杨静陈平刘宗顺朱建军刘炜何晓光李晓静梁锋刘建平张立群杨辉张源涛杜国同龙衡李沫

2017

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Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

Chinese physics B, 2015-09, Vol.24 (9), p.408-412

李晓静赵德刚江德生陈平朱建军刘宗顺乐伶聪杨静何晓光张立群刘建平张书明杨辉

2015

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Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide

Chinese physics B, 2017-12, Vol.26 (12), p.302-306

2017

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Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer

Chinese physics B, 2015-11, Vol.24 (11), p.389-392

李晓静赵德刚江德生陈平朱建军刘宗顺乐伶聪杨静何晓光

2015

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Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes

Chinese physics B, 2017-11, Vol.26 (11), p.210-215

2017

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Temperature-dependent photoluminescence spectra of GaN epitaxial layer grown on Si (111) substrate

Chinese physics B, 2015-10, Vol.24 (10), p.108101-1-108101-4

2015

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The residual C concentration control for low temperature growth p-type GaN

Chinese physics B, 2017-10, Vol.26 (10), p.411-416

刘双韬赵德刚杨静江德生梁锋陈平朱建军刘宗顺李翔刘炜邢瑶张立群

2017

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Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode

Chinese physics B, 2015-12, Vol.24 (12), p.127801

2015

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Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films

Chinese physics B, 2016-02, Vol.25 (2), p.384-387

杨静赵德刚江德生陈平刘宗顺朱建军乐伶聪李晓静何晓光张立群杨辉

2016

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Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells

Chinese physics B, 2014-06, Vol.23 (6), p.629-634

杨静赵德刚江德生刘宗顺陈平李亮吴亮亮乐伶聪李晓静何晓光王辉朱建军张书明张宝顺杨辉

2014

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Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime

Chinese physics B, 2013-09, Vol.22 (9), p.671-675, Article 098801

杨静赵德刚江德生刘宗顺陈平李亮吴亮亮乐伶聪李晓静何晓光王辉朱建军张书明张宝顺杨辉

2013

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Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure

Chinese physics B, 2015-09, Vol.24 (9), p.399-402

何晓光赵德刚江德生朱建军陈平刘宗顺乐伶聪杨静李晓静张书明杨辉

2015

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Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p—i—n avalanche photodiodes

Chinese physics B, 2014-02, Vol.23 (2), p.028503-1-028503-5

2014

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Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC

Chinese physics B, 2016-05, Vol.25 (5), p.369-372

梁锋陈平赵德刚江德生赵志娟刘宗顺朱建军杨静刘炜何晓光李晓静李翔刘双韬杨辉张立群刘建平张源涛杜国同

2016

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Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage

Chinese physics B, 2015-05, Vol.24 (5), p.587-591

侍铭陈平赵德刚江德生郑军成步文朱建军刘宗顺刘炜李翔赵丹梅王启明刘建平张书明杨辉

2015

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The effects of InGaN layer thickness on the performance of InGaN/GaN p-i-n solar cells

Chinese physics B, 2013-06, Vol.22 (6), p.666-669

李亮赵德刚江德生刘宗顺陈平吴亮亮乐伶聪王辉杨辉

2013

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Thermal analysis of GaN laser diodes in a package structure

Chinese physics B, 2012-08, Vol.21 (8), p.264-269

冯美鑫张书明江德生刘建平王辉曾畅李增成王怀兵王峰杨辉

2012

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Time delay in InGaN multiple quantum well laser diodes at room temperature

Chinese physics B, 2010-12, Vol.19 (12), p.305-309, Article 124211

季莲江德生张书明刘宗顺曾畅赵德刚朱建军王辉段俐宏杨辉

2010

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GaN-based violet laser diodes grown on free-standing GaN substrate

Chinese physics B, 2009-12, Vol.18 (12), p.5350-5353, Article 5350

张立群张书明江德生王辉朱建军赵德刚刘宗顺杨辉

2009

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Polarization dependent dispersion and its impact on optical parametric process in high nonlinear microstructure fibre

Chinese physics B, 2008-03, Vol.17 (3), p.995-999

2008

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Acoustic longitudinal mode coupling in w-shaped Al/Ge Co-doped fibre

Atlas of dynamic spectra of fast radio burst FRB 20201124A

Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes

Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift

Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials

Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths

Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide

Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer

Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes

Temperature-dependent photoluminescence spectra of GaN epitaxial layer grown on Si (111) substrate

The residual C concentration control for low temperature growth p-type GaN

Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode

Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films

Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells

Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime

Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure

Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p—i—n avalanche photodiodes

Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC

Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage

The effects of InGaN layer thickness on the performance of InGaN/GaN p-i-n solar cells

Thermal analysis of GaN laser diodes in a package structure

Time delay in InGaN multiple quantum well laser diodes at room temperature

GaN-based violet laser diodes grown on free-standing GaN substrate

Polarization dependent dispersion and its impact on optical parametric process in high nonlinear microstructure fibre

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