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Numerical investigation on threading dislocation bending with InAs/GaAs quantum dots
Chinese physics B, 2021-11, Vol.30 (11), p.110201-169
2021
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Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition
Chinese physics B, 2015-02, Vol.24 (2), p.449-452
2015
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Fabrication and characterization of novel high-speed InGaAs/InP uni-traveling-carrier photodetector for high responsivity
Chinese physics B, 2015-10, Vol.24 (10), p.108506-1-108506-5
2015
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Fabrication and electrical properties of axial and radial GaAs nanowire pn junction diode arrays
Chinese physics B, 2014-12, Vol.23 (12), p.128503-1-128503-4
2014
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Growth and characterization of straight InAs/GaAs nanowire heterostructures on Si substrate
Chinese physics B, 2013-07, Vol.22 (7), p.377-382, Article 076102
2013
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Thermal stress reduction of GaAs epitaxial growth on V-groove patterned Si substrates
Chinese physics B, 2021-01, Vol.30 (1), p.16102
2021
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Growth and characterization of GaAs/InxGa1-xAs/GaAs axial nanowire heterostructures with symmetrical heterointerfaces
中国物理B：英文版, 2013-06 (6), p.459-464
2013
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Thermal stress reduction of GaAs epitaxial growth on V-groove patterned Si substratesProject supported by the National Natural Science Foundation of China (Grant Nos. 61874148, 61974141, and 61674020), the Beijing Natural Science Foundation, China (Grant No. 4192043), the State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), China (Grant No. IPOC2018ZT01), and the 111 Project of China (Grant No. B07005)
Chinese physics B, 2021-01, Vol.30 (1)
2021
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Numerical investigation on threading dislocation bending with InAs/GaAs quantum dots Project supported by the National Natural Science Foundation of China (Grant Nos. 61874148, 61974141, and 61674020), the Beijing Natural Science Foundation, China (Grant No. 4192043), the National Key Research and Development Program of China (Grant No. 2018YFB2200104), the Fund from the Beijing Municipal Science & Technology Commission, China (Grant No. Z191100004819012), the Project of the State Key Laboratory
Chinese physics B, 2021-11, Vol.30 (11)
2021
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Fabrication and characterization of novel high-speed InGaAs/InP uni-traveling-carrier photodetector for high responsivityProject supported partially by the National Natural Science Foundation of China (Grant Nos. 61274044 and 61077049), the National Basic Research Program of China (Grant No. 2010CB327600), the Program of Key International Science and Technology Cooperation Projects, China (Grant No. 2011RR000100), the 111 Project of China (Grant No. B07005), the Specialized Research Fund for the
Chinese physics B, 2015-10, Vol.24 (10)
2015
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Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor depositionProject supported by the Fundamental Research Funds for the Central Universities, China (Grant No. 2013RC1205) and the National Basic Research Program of China (Grant No. 2010CB327601)
Chinese physics B, 2015-02, Vol.24 (2)
2015
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Growth and characterization of GaAs/In sub(x)Ga sub(1-x)As/GaAs axial nanowire heterostructures with symmetrical heterointerfaces
Chinese physics B, 2013-06, Vol.22 (6), p.066101-1-066101-6
2013
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Growth and characterization of GaAs/In x Ga 1− x As/GaAs axial nanowire heterostructures with symmetrical heterointerfaces
Chinese physics B, 2013-06, Vol.22 (6), p.66101
2013
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Evolution of incommensurate superstructure and electronic structure with Pb substitution in (Bi 2−x Pb x )Sr 2 CaCu 2 O 8+δ superconductors
Chinese physics B, 2019-07, Vol.28 (7), p.77403
2019
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Evolution of incommensurate superstructure and electronic structure with Pb substitution in (Bi2−xPbx)Sr2CaCu2O8+δ superconductors Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFA0300300 and 2017YFA0302900), the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant Nos. XDB07020300 and XDB25000000), the National Natural Science Foundation of China (Grant Nos. 11334010 and 11534007), and the Youth Innovation Promotion
Chinese physics B, 2019-07, Vol.28 (7)
2019
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