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Modulating metallic conductive filaments via bilayer oxides in resistive switching memory

Applied physics letters, 2019-05, Vol.114 (19)

2019

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Fabrication of highly ordered metallic nanowire arrays by electrodeposition

Applied physics letters, 2001-08, Vol.79 (7), p.1039-1041

2001

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Growth of continuous and ultrathin platinum films on tungsten adhesion layers using atomic layer deposition techniques

Applied physics letters, 2012-09, Vol.101 (11)

2012

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Remarkable charge-trapping efficiency of the memory device with (TiO2)0.8(Al2O3)0.1 composite charge-storage dielectric

Applied physics letters, 2014-06, Vol.104 (26)

2014

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The effect of acoustic phonon scattering on the carrier mobility in the semiconducting zigzag single wall carbon nanotubes

Applied physics letters, 2010-05, Vol.96 (18), p.183108

2010

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Large polarization and enhanced magnetic properties in BiFeO3 ceramic prepared by high-pressure synthesis

Applied physics letters, 2007-08, Vol.91 (9)

2007

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The growth of metallic nanofilaments in resistive switching memory devices based on solid electrolytes

Applied physics letters, 2009-04, Vol.94 (15), p.153504-153504-3

2009

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In-situ observation of nanomechanical behavior arising from critical-temperature-induced phase transformation in Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 thin film

Applied physics letters, 2013-08, Vol.103 (7)

2013

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High electron mobility and low sheet resistance in lattice-matched AlInN/AlN/GaN/AlN/GaN double-channel heterostructure

Applied physics letters, 2009-11, Vol.95 (21)

2009

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Electronic and magnetic properties of zigzag graphene nanoribbon with one edge saturated

Applied physics letters, 2010-04, Vol.96 (16)

2010

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Carbon nanotube gated lateral resonant tunneling field-effect transistors

Applied physics letters, 2005-10, Vol.87 (15), p.152102-152102-3

2005

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Band alignments and improved leakage properties of (La2O3)0.5(SiO2)0.5/SiO2/GaN stacks for high-temperature metal-oxide-semiconductor field-effect transistor applications

Applied physics letters, 2009-06, Vol.94 (25)

2009

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Ferromagnetic and antiferromagnetic properties of the semihydrogenated SiC sheet

Applied physics letters, 2010-04, Vol.96 (14), p.143111-143111-3

2010

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Effects of the electroforming polarity on bipolar resistive switching characteristics of SrTiO3−δ films

Applied physics letters, 2010-09, Vol.97 (11)

2010

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Plasmon energy shift in mesoporous and double length-scale ordered nanoporous silica

Applied physics letters, 1999-05, Vol.74 (18), p.2629-2631

1999

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Enhanced fatigue and retention properties of Pb(Ta0.05Zr0.48Ti0.47)O3 films using La0.25Sr0.75CoO3 top and bottom electrodes

Applied physics letters, 1999-12, Vol.75 (23), p.3698-3700

1999

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Studies of Mn valence conversion and oxygen vacancies in La1−xCaxMnO3−y using electron energy-loss spectroscopy

Applied physics letters, 1997-06, Vol.70 (25), p.3362-3364

1997

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Revised ab initio natural band offsets of all group IV, II-VI, and III-V semiconductors

Applied physics letters, 2009-05, Vol.94 (21), p.212109-212109-3

2009

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Remarkable charge-trapping efficiency of the memory device with (TiO{sub 2}){sub 0.8}(Al{sub 2}O{sub 3}){sub 0.1} composite charge-storage dielectric

Applied physics letters, 2014-06, Vol.104 (26)

2014

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Defect segregation at grain boundary and its impact on photovoltaic performance of CuInSe2

Applied physics letters, 2013-05, Vol.102 (19)

2013

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Completely 〈111〉-textured growth and enhanced ferroelectric properties of Pb(Ta0.05Zr0.48Ti0.47)O3 films on Pt/TiO2/SiO2/Si(001) using SrRuO3 buffer layer

Applied physics letters, 1999-11, Vol.75 (21), p.3396-3398

1999

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Resistive switching devices based on nanocrystalline solid electrolyte ( AgI ) 0.5 ( AgP O 3 ) 0.5

Applied physics letters, 2007-12, Vol.91 (24), p.243513-243513-3

2007

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Electric switching and memory devices made from RbAg4I5 films

Applied physics letters, 2007-01, Vol.90 (2)

2007

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Studies of metal–ferroelectric–GaN structures

Applied physics letters, 1999-10, Vol.75 (16), p.2416-2417

1999

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Prediction of the chemical trends of oxygen vacancy levels in binary metal oxides

Applied physics letters, 2011-10, Vol.99 (14), p.142109-142109-3

2011

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Modulating metallic conductive filaments via bilayer oxides in resistive switching memory

Fabrication of highly ordered metallic nanowire arrays by electrodeposition

Growth of continuous and ultrathin platinum films on tungsten adhesion layers using atomic layer deposition techniques

Remarkable charge-trapping efficiency of the memory device with (TiO2)0.8(Al2O3)0.1 composite charge-storage dielectric

The effect of acoustic phonon scattering on the carrier mobility in the semiconducting zigzag single wall carbon nanotubes

Large polarization and enhanced magnetic properties in BiFeO3 ceramic prepared by high-pressure synthesis

The growth of metallic nanofilaments in resistive switching memory devices based on solid electrolytes

In-situ observation of nanomechanical behavior arising from critical-temperature-induced phase transformation in Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 thin film

High electron mobility and low sheet resistance in lattice-matched AlInN/AlN/GaN/AlN/GaN double-channel heterostructure

Electronic and magnetic properties of zigzag graphene nanoribbon with one edge saturated

Carbon nanotube gated lateral resonant tunneling field-effect transistors

Band alignments and improved leakage properties of (La2O3)0.5(SiO2)0.5/SiO2/GaN stacks for high-temperature metal-oxide-semiconductor field-effect transistor applications

Ferromagnetic and antiferromagnetic properties of the semihydrogenated SiC sheet

Effects of the electroforming polarity on bipolar resistive switching characteristics of SrTiO3−δ films

Plasmon energy shift in mesoporous and double length-scale ordered nanoporous silica

Enhanced fatigue and retention properties of Pb(Ta0.05Zr0.48Ti0.47)O3 films using La0.25Sr0.75CoO3 top and bottom electrodes

Studies of Mn valence conversion and oxygen vacancies in La1−xCaxMnO3−y using electron energy-loss spectroscopy

Revised ab initio natural band offsets of all group IV, II-VI, and III-V semiconductors

Remarkable charge-trapping efficiency of the memory device with (TiO{sub 2}){sub 0.8}(Al{sub 2}O{sub 3}){sub 0.1} composite charge-storage dielectric

Defect segregation at grain boundary and its impact on photovoltaic performance of CuInSe2

Completely 〈111〉-textured growth and enhanced ferroelectric properties of Pb(Ta0.05Zr0.48Ti0.47)O3 films on Pt/TiO2/SiO2/Si(001) using SrRuO3 buffer layer

Resistive switching devices based on nanocrystalline solid electrolyte ( AgI ) 0.5 ( AgP O 3 ) 0.5

Electric switching and memory devices made from RbAg4I5 films

Studies of metal–ferroelectric–GaN structures

Prediction of the chemical trends of oxygen vacancy levels in binary metal oxides

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