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Polarized neutron reflectometry characterization of perpendicular magnetized Ho3Fe5O12 films with efficient spin-orbit torque induced switching

Applied physics letters, 2021-11, Vol.119 (21)

2021

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High stored energy of metallic glasses induced by high pressure

Applied physics letters, 2017-03, Vol.110 (11)

2017

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Pressure effects on multiferroic LuFe 2 O 4

Applied physics letters, 2010-03, Vol.96 (10), p.102909-102909-3

2010

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Pressure effects on multiferroic LuFe2O4

Applied physics letters, 2010-03, Vol.96 (10)

2010

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Symmetry of unoccupied electronic states in the high- T c superconductor Sr 2 CuO 2 + δ Cl 2 − y studied by electron energy-loss spectroscopy

Applied physics letters, 2006-02, Vol.88 (8), p.082502-082502-3

2006

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Symmetry of unoccupied electronic states in the high-Tc superconductor Sr2CuO2+δCl2−y studied by electron energy-loss spectroscopy

Applied physics letters, 2006-02, Vol.88 (8)

2006

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Pressure-induced structural phase transition in CaCrO4: Evidence from Raman scattering studies

Applied physics letters, 2005-10, Vol.87 (18)

2005

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Pressure-induced structural phase transition in Ca Cr O 4 : Evidencefrom Raman scattering studies

Applied physics letters, 2005-10, Vol.87 (18), p.181901-181901-3

2005

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Luminescence from stacking faults in gallium nitride

Applied physics letters, 2005-01, Vol.86 (2), p.021908-021908-3

2005

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Below band gap photoreflectance transitions in epitaxial GaN

Applied physics letters, 2004-09, Vol.85 (11), p.1931-1933

2004

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Increase of free carrier lifetime in nonpolar a-plane GaN grown by epitaxial lateral overgrowth

Applied physics letters, 2004-08, Vol.85 (5), p.771-773

2004

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Room-temperature optically pumped laser emission from a -plane GaN with high optical gain characteristics

Applied physics letters, 2004-04, Vol.84 (16), p.2998-3000

2004

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Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN

Applied physics letters, 2004-02, Vol.84 (5), p.696-698

2004

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GaN/AlGaN multiple quantum wells on a -plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices

Applied physics letters, 2003-09, Vol.83 (13), p.2599-2601

2003

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AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors

Applied physics letters, 2003-06, Vol.82 (25), p.4593-4595

2003

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AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN

Applied physics letters, 2003-02, Vol.82 (8), p.1299-1301

2003

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AlGaN layers grown on GaN using strain-relief interlayers

Applied physics letters, 2002-12, Vol.81 (26), p.4961-4963

2002

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Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm

Applied physics letters, 2002-12, Vol.81 (23), p.4392-4394

2002

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Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells

Applied physics letters, 2002-11, Vol.81 (22), p.4130-4132

2002

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GaN homoepitaxy on freestanding (11̄00) oriented GaN substrates

Applied physics letters, 2002-10, Vol.81 (17), p.3194-3196

2002

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AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire

Applied physics letters, 2002-07, Vol.81 (4), p.604-606

2002

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Time-resolved photoluminescence of quaternary AlInGaN-based multiple quantum wells

Applied physics letters, 2002-05, Vol.80 (21), p.3943-3945

2002

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Luminescence mechanisms in quaternary AlxInyGa1−x−yN materials

Applied physics letters, 2002-05, Vol.80 (20), p.3730-3732

2002

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Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management

Applied physics letters, 2002-05, Vol.80 (19), p.3542-3544

2002

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Origins of both insulator–metal transition and colossal magnetoresistance in doped manganese perovskites

Applied physics letters, 2000-12, Vol.77 (26), p.4398-4400

2000

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Polarized neutron reflectometry characterization of perpendicular magnetized Ho3Fe5O12 films with efficient spin-orbit torque induced switching

High stored energy of metallic glasses induced by high pressure

Pressure effects on multiferroic LuFe 2 O 4

Pressure effects on multiferroic LuFe2O4

Symmetry of unoccupied electronic states in the high- T c superconductor Sr 2 CuO 2 + δ Cl 2 − y studied by electron energy-loss spectroscopy

Symmetry of unoccupied electronic states in the high-Tc superconductor Sr2CuO2+δCl2−y studied by electron energy-loss spectroscopy

Pressure-induced structural phase transition in CaCrO4: Evidence from Raman scattering studies

Pressure-induced structural phase transition in Ca Cr O 4 : Evidencefrom Raman scattering studies

Luminescence from stacking faults in gallium nitride

Below band gap photoreflectance transitions in epitaxial GaN

Increase of free carrier lifetime in nonpolar a-plane GaN grown by epitaxial lateral overgrowth

Room-temperature optically pumped laser emission from a -plane GaN with high optical gain characteristics

Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN

GaN/AlGaN multiple quantum wells on a -plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices

AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors

AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN

AlGaN layers grown on GaN using strain-relief interlayers

Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm

Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells

GaN homoepitaxy on freestanding (11̄00) oriented GaN substrates

AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire

Time-resolved photoluminescence of quaternary AlInGaN-based multiple quantum wells

Luminescence mechanisms in quaternary AlxInyGa1−x−yN materials

Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management

Origins of both insulator–metal transition and colossal magnetoresistance in doped manganese perovskites

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