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Current-induced spin polarization at a single heterojunction

Applied physics letters, 2004-12, Vol.85 (24), p.5929-5931

2004

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Atomic-scale structure of self-assembled In(Ga)As quantum rings in GaAs

Applied physics letters, 2005-09, Vol.87 (13), p.131902-131902-3

2005

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Capping process of InAs∕GaAs quantum dots studied by cross-sectional scanning tunneling microscopy

Applied physics letters, 2004-12, Vol.85 (23), p.5697-5699

2004

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Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy

Applied physics letters, 2002-08, Vol.81 (9), p.1708-1710

2002

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Formation of InAs wetting layers studied by cross-sectional scanning tunneling microscopy

Applied physics letters, 2005-09, Vol.87 (11), p.111903-111903-3

2005

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Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy

Applied physics letters, 2004-01, Vol.84 (2), p.275-277

2004

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Formation of InAs quantum dot arrays on GaAs (100) by self-organized anisotropic strain engineering of a (In,Ga)As superlattice template

Applied physics letters, 2002-08, Vol.81 (9), p.1705-1707

2002

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Stacking and polarization control of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots

Applied physics letters, 2006-02, Vol.88 (6)

2006

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All-optical switching due to state filling in quantum dots

Applied physics letters, 2004-05, Vol.84 (20), p.4059-4061

2004

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Stacked low-growth-rate InAs quantum dots studied at the atomic level by cross-sectional scanning tunneling microscopy

Applied physics letters, 2003-05, Vol.82 (21), p.3758-3760

2003

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Lasing of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots grown by metal organic vapor-phase epitaxy

Applied physics letters, 2006-08, Vol.89 (7)

2006

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Digital alloy interface grading of an InAlAs/InGaAs quantum cascade laser structure studied by cross-sectional scanning tunneling microscopy

Applied physics letters, 2003-11, Vol.83 (20), p.4131-4133

2003

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Self-organized lattice of ordered quantum dot molecules

Applied physics letters, 2004-07, Vol.85 (1), p.118-120

2004

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Formation of columnar (In,Ga)As quantum dots on GaAs(100)

Applied physics letters, 2004-10, Vol.85 (14), p.2771-2773

2004

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Spectrally resolved luminescence from an InGaAs quantum well induced by an ambient scanning tunneling microscope

Applied physics letters, 1999-12, Vol.75 (23), p.3656-3658

1999

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Ultrafast carrier capture at room temperature in InAs ∕ InP quantum dots emitting in the 1.55 μ m wavelength region

Applied physics letters, 2005-04, Vol.86 (17), p.173109-173109-3

2005

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InAs ∕ InP quantum dots emitting in the 1.55μm wavelength region by inserting submonolayer GaP interlayers

Applied physics letters, 2004-08, Vol.85 (8), p.1404-1406

2004

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Andreev reflection at superconducting contacts to GaAs/AlGaAs heterostructures

Applied physics letters, 1993-10, Vol.63 (15), p.2079-2081

1993

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Coherent acoustic phonons in strain engineered InAs∕GaAs quantum dot clusters

Applied physics letters, 2006-04, Vol.88 (14)

2006

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Large asymmetric Stark shift in GaxIn1−xAs/InP/InAsyP1−y composite quantum wells

Applied physics letters, 2003-10, Vol.83 (14), p.2838-2840

2003

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Carrier-carrier scattering induced capture in quantum well lasers

Applied physics letters, 1993-03, Vol.62 (13), p.1490-1492

1993

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Optimization of barrier thickness for efficient carrier capture in graded-index and separate-confinement multiple quantum well lasers

Applied physics letters, 1991-06, Vol.58 (24), p.2767-2769

1991

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Leveling and rebuilding: An approach to improve the uniformity of (In,Ga)As quantum dots

Applied physics letters, 2002-09, Vol.81 (10), p.1887-1889

2002

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Spatially resolved scanning tunneling luminescence on self-assembled InGaAs/GaAs quantum dots

Applied physics letters, 2003-07, Vol.83 (2), p.290-292

2003

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Self-organized strain engineering on GaAs (311)B: Template formation for quantum dot nucleation control

Applied physics letters, 2002-10, Vol.81 (17), p.3254-3256

2002

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Current-induced spin polarization at a single heterojunction

Atomic-scale structure of self-assembled In(Ga)As quantum rings in GaAs

Capping process of InAs∕GaAs quantum dots studied by cross-sectional scanning tunneling microscopy

Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy

Formation of InAs wetting layers studied by cross-sectional scanning tunneling microscopy

Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy

Formation of InAs quantum dot arrays on GaAs (100) by self-organized anisotropic strain engineering of a (In,Ga)As superlattice template

Stacking and polarization control of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots

All-optical switching due to state filling in quantum dots

Stacked low-growth-rate InAs quantum dots studied at the atomic level by cross-sectional scanning tunneling microscopy

Lasing of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots grown by metal organic vapor-phase epitaxy

Digital alloy interface grading of an InAlAs/InGaAs quantum cascade laser structure studied by cross-sectional scanning tunneling microscopy

Self-organized lattice of ordered quantum dot molecules

Formation of columnar (In,Ga)As quantum dots on GaAs(100)

Spectrally resolved luminescence from an InGaAs quantum well induced by an ambient scanning tunneling microscope

Ultrafast carrier capture at room temperature in InAs ∕ InP quantum dots emitting in the 1.55 μ m wavelength region

InAs ∕ InP quantum dots emitting in the 1.55μm wavelength region by inserting submonolayer GaP interlayers

Andreev reflection at superconducting contacts to GaAs/AlGaAs heterostructures

Coherent acoustic phonons in strain engineered InAs∕GaAs quantum dot clusters

Large asymmetric Stark shift in GaxIn1−xAs/InP/InAsyP1−y composite quantum wells

Carrier-carrier scattering induced capture in quantum well lasers

Optimization of barrier thickness for efficient carrier capture in graded-index and separate-confinement multiple quantum well lasers

Leveling and rebuilding: An approach to improve the uniformity of (In,Ga)As quantum dots

Spatially resolved scanning tunneling luminescence on self-assembled InGaAs/GaAs quantum dots

Self-organized strain engineering on GaAs (311)B: Template formation for quantum dot nucleation control

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