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Spin–phonon interactions and magnetoelectric coupling in Co4B2O9 ( B = Nb, Ta)

Applied physics letters, 2023-05, Vol.122 (18)

2023

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Influence of graphene-substrate interactions on configurations of organic molecules on graphene: Pentacene/epitaxial graphene/SiC

Applied physics letters, 2014-08, Vol.105 (7)

2014

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Band engineering of bilayer graphene by metal atoms: First-principles calculations

Applied physics letters, 2010-06, Vol.96 (23), p.231916-231916-3

2010

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Spontaneous assembly of ordered atomic wires with a long interwire distance on a stepped atomic template

Applied physics letters, 2013-05, Vol.102 (20)

2013

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Origin of forward leakage current in GaN-based light-emitting devices

Applied physics letters, 2006-09, Vol.89 (13), p.132117-132117-3

2006

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Characteristics of Schottky contacts to ZnO:N layers grown by molecular-beam epitaxy

Applied physics letters, 2005-01, Vol.86 (4), p.42110

2005

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Comparative study of photoluminescences for Zn-polar and O-polar faces of single-crystalline ZnO bulks

Applied physics letters, 2008-12, Vol.93 (24), p.241907-241907-3

2008

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Capacitance-voltage characteristics of ZnO∕GaN heterostructures

Applied physics letters, 2005-10, Vol.87 (16)

2005

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Spin–phonon interactions and magnetoelectric coupling in Co4 B 2O9 (B = Nb, Ta)

Applied physics letters, 2023-05, Vol.122 (18)

2023

Volltextzugriff (PDF)

Electron-trap centers in ZnO layers grown by molecular-beam epitaxy

Applied physics letters, 2005-01, Vol.86 (3), p.032909-032909-3

2005

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Influence of heat treatments on electrical properties of ZnO films grown by molecular-beam epitaxy

Applied physics letters, 2009-10, Vol.95 (15)

2009

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Impact of V/III ratio on electrical properties of GaN thick films grown by hydride vapor-phase epitaxy

Applied physics letters, 2007-09, Vol.91 (13)

2007

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Structural and optical investigations of periodically polarity inverted ZnO heterostructures on (0001) Al2O3

Applied physics letters, 2009-04, Vol.94 (14)

2009

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Lattice relaxation mechanism of ZnO thin films grown on c-Al2O3 substrates by plasma-assisted molecular-beam epitaxy

Applied physics letters, 2007-12, Vol.91 (23)

2007

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Lattice relaxation mechanism of ZnO thin films grown on c-Al{sub 2}O{sub 3} substrates by plasma-assisted molecular-beam epitaxy

Applied physics letters, 2007-12, Vol.91 (23)

2007

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Correlation of optical and structural properties of light emitting porous silicon

Applied physics letters, 1993-02, Vol.62 (8), p.855-857

1993

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Realization of one-chip-multiple-wavelength laser diodes with II–VI/III–V compound semiconductors

Applied physics letters, 2003-06, Vol.82 (23), p.4095-4097

2003

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Photoluminescence, Raman scattering, and infrared absorption studies of porous silicon

Applied physics letters, 1993-04, Vol.62 (15), p.1812-1814

1993

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High external emission efficiency in intentionally ordered GaInP/GaAs structures

Applied physics letters, 2009-02, Vol.94 (5), p.051902-051902-3

2009

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Influence of heat treatments on electrical properties of ZnO films grownby molecular-beam epitaxy

Applied physics letters, 2009-10, Vol.95 (15), p.151908-151908-3

2009

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Structural and optical investigations of periodically polarity inverted ZnO heterostructures on (0001) Al 2 O 3

Applied physics letters, 2009-04, Vol.94 (14), p.141904-141904-3

2009

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Impact of V/III ratio on electrical properties of GaN thick films grownby hydride vapor-phase epitaxy

Applied physics letters, 2007-09, Vol.91 (13), p.132112-132112-3

2007

Volltextzugriff (PDF)

Lattice relaxation mechanism of ZnO thin films grown on c - Al 2 O 3 substrates by plasma-assisted molecular-beam epitaxy

Applied physics letters, 2007-12, Vol.91 (23), p.231904-231904-3

2007

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Capacitance-voltage characteristics of Zn O ∕ Ga N heterostructures

Applied physics letters, 2005-10, Vol.87 (16), p.162104-162104-3

2005

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Characteristics of Schottky contacts to ZnO:N layers grownby molecular-beam epitaxy

Applied physics letters, 2005-01, Vol.86 (4), p.042110-042110-3

2005

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Spin–phonon interactions and magnetoelectric coupling in Co4B2O9 ( B = Nb, Ta)

Influence of graphene-substrate interactions on configurations of organic molecules on graphene: Pentacene/epitaxial graphene/SiC

Band engineering of bilayer graphene by metal atoms: First-principles calculations

Spontaneous assembly of ordered atomic wires with a long interwire distance on a stepped atomic template

Origin of forward leakage current in GaN-based light-emitting devices

Characteristics of Schottky contacts to ZnO:N layers grown by molecular-beam epitaxy

Comparative study of photoluminescences for Zn-polar and O-polar faces of single-crystalline ZnO bulks

Capacitance-voltage characteristics of ZnO∕GaN heterostructures

Spin–phonon interactions and magnetoelectric coupling in Co4 B 2O9 (B = Nb, Ta)

Electron-trap centers in ZnO layers grown by molecular-beam epitaxy

Influence of heat treatments on electrical properties of ZnO films grown by molecular-beam epitaxy

Impact of V/III ratio on electrical properties of GaN thick films grown by hydride vapor-phase epitaxy

Structural and optical investigations of periodically polarity inverted ZnO heterostructures on (0001) Al2O3

Lattice relaxation mechanism of ZnO thin films grown on c-Al2O3 substrates by plasma-assisted molecular-beam epitaxy

Lattice relaxation mechanism of ZnO thin films grown on c-Al{sub 2}O{sub 3} substrates by plasma-assisted molecular-beam epitaxy

Correlation of optical and structural properties of light emitting porous silicon

Realization of one-chip-multiple-wavelength laser diodes with II–VI/III–V compound semiconductors

Photoluminescence, Raman scattering, and infrared absorption studies of porous silicon

High external emission efficiency in intentionally ordered GaInP/GaAs structures

Influence of heat treatments on electrical properties of ZnO films grownby molecular-beam epitaxy

Structural and optical investigations of periodically polarity inverted ZnO heterostructures on (0001) Al 2 O 3

Impact of V/III ratio on electrical properties of GaN thick films grownby hydride vapor-phase epitaxy

Lattice relaxation mechanism of ZnO thin films grown on c - Al 2 O 3 substrates by plasma-assisted molecular-beam epitaxy

Capacitance-voltage characteristics of Zn O ∕ Ga N heterostructures

Characteristics of Schottky contacts to ZnO:N layers grownby molecular-beam epitaxy

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