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Antiferromagnetic resonance excitation by terahertz magnetic field resonantly enhanced with split ring resonator

Applied physics letters, 2014-07, Vol.105 (2)

2014

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Surface plasmon enhanced spontaneous emission rate of InGaN ∕ GaN quantum wells probed by time-resolved photoluminescence spectroscopy

Applied physics letters, 2005-08, Vol.87 (7), p.071102-071102-3

2005

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Emission color tunable light-emitting diodes composed of InGaN multifacet quantum wells

Applied physics letters, 2008-07, Vol.93 (2), p.021126-021126-3

2008

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Tailored emission color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors

Applied physics letters, 2006-06, Vol.88 (26), p.261920-261920-3

2006

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Epitaxial growth and optical properties of semipolar (112¯2) GaN and InGaN∕GaN quantum wells on GaN bulk substrates

Applied physics letters, 2006-11, Vol.89 (21)

2006

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Efficient rainbow color luminescence from InxGa1−xN single quantum wells fabricated on {112¯2} microfacets

Applied physics letters, 2005-12, Vol.87 (23)

2005

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Prismatic stacking faults in epitaxially laterally overgrown GaN

Applied physics letters, 2006-04, Vol.88 (14), p.141912-141912-3

2006

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Efficient radiative recombination from ⟨112¯2⟩ -oriented InxGa1−xN multiple quantum wells fabricated by the regrowth technique

Applied physics letters, 2004-10, Vol.85 (15), p.3122-3124

2004

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Interplay of built-in potential and piezoelectric field on carrier recombination in green light emitting InGaN quantum wells

Applied physics letters, 2007-09, Vol.91 (12), p.123503-123503-3

2007

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Generation of misfit dislocations by basal-plane slip in InGaN∕GaN heterostructures

Applied physics letters, 2006-11, Vol.89 (20)

2006

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Additive color mixture of emission from InGaN∕GaN quantum wells on structure-controlled GaN microfacets

Applied physics letters, 2007-04, Vol.90 (17)

2007

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Spatial and temporal luminescence dynamics in an InxGa1−xN single quantum well probed by near-field optical microscopy

Applied physics letters, 2002-12, Vol.81 (23), p.4353-4355

2002

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Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics

Applied physics letters, 1999-03, Vol.74 (11), p.1561-1563

1999

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Stimulated emission at 474 nm from an InGaN laser diode structure grown on a ( 1 1 2 ¯ 2 ) GaN substrate

Applied physics letters, 2007-12, Vol.91 (25), p.251107-251107-3

2007

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Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy

Applied physics letters, 2003-10, Vol.83 (17), p.3462-3464

2003

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Nonlinear processes responsible for nondegenerate four-wave mixing in quantum-dot optical amplifiers

Applied physics letters, 2000-09, Vol.77 (12), p.1753-1755

2000

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Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of an In0.02Ga0.98N active layer

Applied physics letters, 1999-01, Vol.74 (4), p.558-560

1999

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Observation of optical instabilities in the photoluminescence of InGaN single quantum well

Applied physics letters, 2006-02, Vol.88 (6), p.061118-061118-3

2006

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Efficient green emission from (112¯2) InGaN∕GaN quantum wells on GaN microfacets probed by scanning near field optical microscopy

Applied physics letters, 2007-06, Vol.90 (26)

2007

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Temperature dependent lasing characteristics of multi-stacked quantum dot lasers

Applied physics letters, 1997-07, Vol.71 (2), p.193-195

1997

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Stimulated emission at 474nm from an InGaN laser diode structure grown on a (112¯2) GaN substrate

Applied physics letters, 2007-12, Vol.91 (25)

2007

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Room-temperature gain and differential gain characteristics of self-assembled InGaAs/GaAs quantum dots for 1.1–1.3 μm semiconductor lasers

Applied physics letters, 2000-08, Vol.77 (6), p.773-775

2000

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High characteristic temperature of near-1.3-μm InGaAs/GaAs quantum-dot lasers at room temperature

Applied physics letters, 2000-06, Vol.76 (23), p.3349-3351

2000

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Efficient rainbow color luminescence from In x Ga 1 − x N single quantum wells fabricated on { 11 2 ¯ 2 } microfacets

Applied physics letters, 2005-11, Vol.87 (23), p.231901-231901-3

2005

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Gain suppression phenomena observed in InxGa1−xN quantum well laser diodes emitting at 470nm

Applied physics letters, 2006-12, Vol.89 (24)

2006

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Antiferromagnetic resonance excitation by terahertz magnetic field resonantly enhanced with split ring resonator

Surface plasmon enhanced spontaneous emission rate of InGaN ∕ GaN quantum wells probed by time-resolved photoluminescence spectroscopy

Emission color tunable light-emitting diodes composed of InGaN multifacet quantum wells

Tailored emission color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors

Epitaxial growth and optical properties of semipolar (112¯2) GaN and InGaN∕GaN quantum wells on GaN bulk substrates

Efficient rainbow color luminescence from InxGa1−xN single quantum wells fabricated on {112¯2} microfacets

Prismatic stacking faults in epitaxially laterally overgrown GaN

Efficient radiative recombination from ⟨112¯2⟩ -oriented InxGa1−xN multiple quantum wells fabricated by the regrowth technique

Interplay of built-in potential and piezoelectric field on carrier recombination in green light emitting InGaN quantum wells

Generation of misfit dislocations by basal-plane slip in InGaN∕GaN heterostructures

Additive color mixture of emission from InGaN∕GaN quantum wells on structure-controlled GaN microfacets

Spatial and temporal luminescence dynamics in an InxGa1−xN single quantum well probed by near-field optical microscopy

Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics

Stimulated emission at 474 nm from an InGaN laser diode structure grown on a ( 1 1 2 ¯ 2 ) GaN substrate

Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy

Nonlinear processes responsible for nondegenerate four-wave mixing in quantum-dot optical amplifiers

Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of an In0.02Ga0.98N active layer

Observation of optical instabilities in the photoluminescence of InGaN single quantum well

Efficient green emission from (112¯2) InGaN∕GaN quantum wells on GaN microfacets probed by scanning near field optical microscopy

Temperature dependent lasing characteristics of multi-stacked quantum dot lasers

Stimulated emission at 474nm from an InGaN laser diode structure grown on a (112¯2) GaN substrate

Room-temperature gain and differential gain characteristics of self-assembled InGaAs/GaAs quantum dots for 1.1–1.3 μm semiconductor lasers

High characteristic temperature of near-1.3-μm InGaAs/GaAs quantum-dot lasers at room temperature

Efficient rainbow color luminescence from In x Ga 1 − x N single quantum wells fabricated on { 11 2 ¯ 2 } microfacets

Gain suppression phenomena observed in InxGa1−xN quantum well laser diodes emitting at 470nm

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