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Achieving high free electron mobility in ZnO:Al thin films grown by reactive pulsed magnetron sputtering

Applied physics letters, 2009-01, Vol.94 (4)

2009

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Establishing the mechanism of thermally induced degradation of ZnO:Al electrical properties using synchrotron radiation

Applied physics letters, 2010-04, Vol.96 (14), p.141907-141907-3

2010

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Mechanisms of target poisoning during magnetron sputtering as investigated by real-time in situ analysis and collisional computer simulation

Applied physics letters, 2004-12, Vol.85 (25), p.6134-6136

2004

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On the structure of thin hydrocarbon films

Applied physics letters, 1993-09, Vol.63 (13), p.1771-1773

1993

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Real-time evolution of the indium tin oxide film properties and structure during annealing in vacuum

Applied physics letters, 2004-07, Vol.85 (2), p.212-214

2004

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Multi-dot floating-gates for nonvolatile semiconductor memories: Their ion beam synthesis and morphology

Applied physics letters, 2004-09, Vol.85 (12), p.2373-2375

2004

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Fullerenelike arrangements in carbon nitride thin films grown by direct ion beam sputtering

Applied physics letters, 2005-08, Vol.87 (7), p.071901-071901-3

2005

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The nitrogen transport in austenitic stainless steel at moderate temperatures

Applied physics letters, 2000-04, Vol.76 (16), p.2194-2196

2000

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Deposition of dense hydrocarbon films from a nonbiased microwave plasma

Applied physics letters, 1993-03, Vol.62 (9), p.937-939

1993

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Modeling of the sp3/sp2 ratio ion beam and plasma-deposited carbon films

Applied physics letters, 1991-11, Vol.59 (19), p.2391-2393

Moeller, W

1991

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Magnetic order by C-ion implantation into Mn5Si3 and Mn5Ge3 and its lateral modification

Applied physics letters, 2008-08, Vol.93 (6)

2008

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Subsurface molecule formation in hydrogen-implanted graphite

Applied physics letters, 1987-06, Vol.50 (26), p.1870-1872

1987

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Growth of low-stress cubic boron nitride films by simultaneous medium-energy ion implantation

Applied physics letters, 2002-01, Vol.80 (1), p.55-57

2002

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Noble gas retention in the target during rotating cylindrical magnetron sputtering

Applied physics letters, 2008-08, Vol.93 (6), p.061501-061501-3

2008

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Phase stability of epitaxially grown Ti2AlN thin films

Applied physics letters, 2006-08, Vol.89 (7)

2006

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The origin of the energy-dose window in separation-by-implanted-oxygen materials processing

Applied physics letters, 2008-05, Vol.92 (18), p.181906-181906-3

2008

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Highly dense amorphous Nb2O5 films with closed nanosized pores

Applied physics letters, 2009-08, Vol.95 (8)

2009

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Lateral variation of target poisoning during reactive magnetron sputtering

Applied physics letters, 2007-06, Vol.90 (26), p.263502-263502-3

2007

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The interplay of sputtering and oxidation during plasma diffusion treatment

Applied physics letters, 1999-09, Vol.75 (13), p.1851-1853

1999

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Annealing of indium tin oxide films by electric current: Properties and structure evolution

Applied physics letters, 2006-08, Vol.89 (6), p.061908-061908-3

2006

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X-ray diffraction study of stress relaxation in cubic boron nitride films grown with simultaneous medium-energy ion bombardment

Applied physics letters, 2004-12, Vol.85 (24), p.5905-5907

2004

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Erratum: "Noble gas retention in the target during rotating cylindrical magnetron sputtering" [ Appl. Phys. Lett. 93 , 061501 ( 2008 )]

Applied physics letters, 2009-02, Vol.94 (6), p.069901-069901-1

2009

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Achieving high free electron mobility in ZnO:Al thin films grownby reactive pulsed magnetron sputtering

Applied physics letters, 2009-01, Vol.94 (4), p.042103-042103-3

2009

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Highly dense amorphous Nb 2 O 5 films with closed nanosized pores

Applied physics letters, 2009-08, Vol.95 (8), p.081904-081904-3

2009

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Magnetic order by C-ion implantation into Mn 5 Si 3 and Mn 5 Ge 3 and its lateral modification

Applied physics letters, 2008-08, Vol.93 (6), p.062503-062503-3

2008

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Achieving high free electron mobility in ZnO:Al thin films grown by reactive pulsed magnetron sputtering

Establishing the mechanism of thermally induced degradation of ZnO:Al electrical properties using synchrotron radiation

Mechanisms of target poisoning during magnetron sputtering as investigated by real-time in situ analysis and collisional computer simulation

On the structure of thin hydrocarbon films

Real-time evolution of the indium tin oxide film properties and structure during annealing in vacuum

Multi-dot floating-gates for nonvolatile semiconductor memories: Their ion beam synthesis and morphology

Fullerenelike arrangements in carbon nitride thin films grown by direct ion beam sputtering

The nitrogen transport in austenitic stainless steel at moderate temperatures

Deposition of dense hydrocarbon films from a nonbiased microwave plasma

Modeling of the sp3/sp2 ratio ion beam and plasma-deposited carbon films

Magnetic order by C-ion implantation into Mn5Si3 and Mn5Ge3 and its lateral modification

Subsurface molecule formation in hydrogen-implanted graphite

Growth of low-stress cubic boron nitride films by simultaneous medium-energy ion implantation

Noble gas retention in the target during rotating cylindrical magnetron sputtering

Phase stability of epitaxially grown Ti2AlN thin films

The origin of the energy-dose window in separation-by-implanted-oxygen materials processing

Highly dense amorphous Nb2O5 films with closed nanosized pores

Lateral variation of target poisoning during reactive magnetron sputtering

The interplay of sputtering and oxidation during plasma diffusion treatment

Annealing of indium tin oxide films by electric current: Properties and structure evolution

X-ray diffraction study of stress relaxation in cubic boron nitride films grown with simultaneous medium-energy ion bombardment

Erratum: "Noble gas retention in the target during rotating cylindrical magnetron sputtering" [ Appl. Phys. Lett. 93 , 061501 ( 2008 )]

Achieving high free electron mobility in ZnO:Al thin films grownby reactive pulsed magnetron sputtering

Highly dense amorphous Nb 2 O 5 films with closed nanosized pores

Magnetic order by C-ion implantation into Mn 5 Si 3 and Mn 5 Ge 3 and its lateral modification

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