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Phase-change memory devices based on gallium-doped indium oxide

Applied physics letters, 2009-03, Vol.94 (11), p.113503-113503-3

2009

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Realization of high-quality HfO2 on In0.53Ga0.47As by in-situ atomic-layer-deposition

Applied physics letters, 2012-04, Vol.100 (17)

2012

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Wall-less liquid pathways formed with three-dimensional microring arrays

Applied physics letters, 2012-09, Vol.101 (11)

2012

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Effect of optical excitation energy on the red luminescence of Eu3+ in GaN

Applied physics letters, 2005-01, Vol.86 (5), p.51110

2005

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Deformation measurement of individual cells in large populations using a single-cell microchamber array chip

Applied physics letters, 2012-04, Vol.100 (17), p.173702-173702-3

2012

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Ultradense phosphorus in germanium delta-doped layers

Applied physics letters, 2009-04, Vol.94 (16), p.162106-162106-3

2009

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Mn-implanted dilute magnetic semiconductor InP:Mn

Applied physics letters, 2004-03, Vol.84 (13), p.2310-2312

2004

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Room temperature ferromagnetic behavior in cluster free, Co doped Y2O3 dilute magnetic oxide films

Applied physics letters, 2012-10, Vol.101 (16)

2012

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Development of a tunable donor quantum dot in silicon

Applied physics letters, 2010-01, Vol.96 (4), p.43116

2010

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High-resolution core-level photoemission study of CF4-treated Gd2O3(Ga2O3) gate dielectric on Ge probed by synchrotron radiation

Applied physics letters, 2011-02, Vol.98 (6)

2011

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Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111)

Applied physics letters, 2007-11, Vol.91 (20)

2007

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High-quality thin single-crystal γ-Al2O3 films grown on Si (111)

Applied physics letters, 2005-08, Vol.87 (9)

2005

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Memory effects related to deep levels in metal–oxide–semiconductor structure with nanocrystalline Si

Applied physics letters, 2002-04, Vol.80 (14), p.2502-2504

2002

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Effect of Co, Ni, and Cu substitution on the electronic structure of hexagonal YMnO3 studied by x-ray absorption spectroscopy

Applied physics letters, 2009-09, Vol.95 (13)

2009

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Enhanced Curie temperature of InMnP:Zn—TC∼300K

Applied physics letters, 2004-09, Vol.85 (10), p.1736-1738

2004

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Characteristics of deep levels in As-implanted GaN films

Applied physics letters, 2002-09, Vol.81 (10), p.1812-1814

2002

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Nanometer thick single crystal Y2O3 films epitaxially grown on Si (111) with structures approaching perfection

Applied physics letters, 2008-02, Vol.92 (6)

2008

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Greatly improved interfacial passivation of in-situ high κ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)

Applied physics letters, 2014-05, Vol.104 (20), p.202102

2014

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Cubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) of enhanced dielectric constant

Applied physics letters, 2007-04, Vol.90 (15)

2007

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Development of a tunable donor quantum dot in silicon

Applied physics letters, 2010-01, Vol.96 (4), p.043116-043116-3

2010

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Effect of Co, Ni, and Cu substitution on the electronic structureof hexagonal YMnO 3 studied by x-ray absorption spectroscopy

Applied physics letters, 2009-09, Vol.95 (13), p.131901-131901-3

2009

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Nanometer thick single crystal Y 2 O 3 films epitaxially grown on Si (111)with structures approaching perfection

Applied physics letters, 2008-02, Vol.92 (6), p.061914-061914-3

2008

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Effect of columnar defects in YBa2Cu3O7−x ramp-edge Josephson junctions

Applied physics letters, 2000-11, Vol.77 (20), p.3239-3241

2000

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Realization of high-quality HfO 2 on In 0.53 Ga 0.47 As by in-situ atomic-layer-deposition

Applied physics letters, 2012-04, Vol.100 (17), p.172110-172110-4

2012

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Direct determination of flat-band voltage for metal/high κ oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generation

Applied physics letters, 2011-04, Vol.98 (17), p.171902-171902-3

2011

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Phase-change memory devices based on gallium-doped indium oxide

Realization of high-quality HfO2 on In0.53Ga0.47As by in-situ atomic-layer-deposition

Wall-less liquid pathways formed with three-dimensional microring arrays

Effect of optical excitation energy on the red luminescence of Eu3+ in GaN

Deformation measurement of individual cells in large populations using a single-cell microchamber array chip

Ultradense phosphorus in germanium delta-doped layers

Mn-implanted dilute magnetic semiconductor InP:Mn

Room temperature ferromagnetic behavior in cluster free, Co doped Y2O3 dilute magnetic oxide films

Development of a tunable donor quantum dot in silicon

High-resolution core-level photoemission study of CF4-treated Gd2O3(Ga2O3) gate dielectric on Ge probed by synchrotron radiation

Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111)

High-quality thin single-crystal γ-Al2O3 films grown on Si (111)

Memory effects related to deep levels in metal–oxide–semiconductor structure with nanocrystalline Si

Effect of Co, Ni, and Cu substitution on the electronic structure of hexagonal YMnO3 studied by x-ray absorption spectroscopy

Enhanced Curie temperature of InMnP:Zn—TC∼300K

Characteristics of deep levels in As-implanted GaN films

Nanometer thick single crystal Y2O3 films epitaxially grown on Si (111) with structures approaching perfection

Greatly improved interfacial passivation of in-situ high κ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)

Cubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) of enhanced dielectric constant

Development of a tunable donor quantum dot in silicon

Effect of Co, Ni, and Cu substitution on the electronic structureof hexagonal YMnO 3 studied by x-ray absorption spectroscopy

Nanometer thick single crystal Y 2 O 3 films epitaxially grown on Si (111)with structures approaching perfection

Effect of columnar defects in YBa2Cu3O7−x ramp-edge Josephson junctions

Realization of high-quality HfO 2 on In 0.53 Ga 0.47 As by in-situ atomic-layer-deposition

Direct determination of flat-band voltage for metal/high κ oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generation

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