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Stimulated emission and lasing in whispering-gallery modes of GaN microdisk cavities

Applied physics letters, 1999-07, Vol.75 (2), p.166-168

1999

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Carbon diffusion in undoped, n-type, and p-type GaAs

Applied physics letters, 1989-08, Vol.55 (7), p.687-689

1989

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Screening effects in (111)B AlGaAs-InGaAs single quantum well heterostructures

Applied physics letters, 1992-05, Vol.60 (21), p.2637-2639

1992

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Low-threshold disorder-defined buried heterostructure strained-layer AlyGa1-yAs-GaAs-InxGa1-xAs quantum well lasers (λ∼910 nm)

Applied physics letters, 1989-03, Vol.54 (10), p.913-915

1989

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Evidence of two-species nucleation of InAs islands on (100) and (111)B GaAs substrates

Applied physics letters, 1996-02, Vol.68 (7), p.912-914

1996

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Stripe-geometry quantum well heterostructure AlxGa1-xAs-GaAs lasers defined by defect diffusion

Applied physics letters, 1986-09, Vol.49 (9), p.510-512

1986

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Depth-dependent native-defect-induced layer disordering in AlxGa1-xAs-GaAs quantum well heterostructures

Applied physics letters, 1989-01, Vol.54 (3), p.262-264

1989

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Measurement of the interwell carrier transport lifetime in multiquantum-well optical amplifiers by polarization-resolved four-wave mixing

Applied physics letters, 1996-12, Vol.69 (27), p.4142-4144

1996

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Visible-wavelength surface-emitting devices with a 15-fold improvement in electrical-to-optical power conversion efficiency

Applied physics letters, 1995-01, Vol.66 (2), p.127-129

1995

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Controlled III–V semiconductor cluster nucleation and epitaxial growth via electron-beam lithography

Applied physics letters, 1995-03, Vol.66 (11), p.1343-1345

1995

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High-power gain-guided coupled-stripe quantum well laser array by hydrogenation

Applied physics letters, 1988-02, Vol.52 (9), p.691-693

1988

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Carbon-doped AlxGa1-xAs-GaAs quantum well lasers

Applied physics letters, 1988-02, Vol.52 (7), p.522-524

1988

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Four-wave mixing mediated by the capture of electrons and holes in semiconductor quantum-well laser amplifiers

Applied physics letters, 1997-12, Vol.71 (25), p.3601-3603

1997

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Instability of partially disordered carbon-doped AlGaAs/GaAs superlattices

Applied physics letters, 1990-12, Vol.57 (27), p.2910-2912

1990

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Disorder-defined buried-heterostructure AlxGa1-xAs-GaAs quantum well lasers by diffusion of silicon and oxygen from Al-reduced SiO2

Applied physics letters, 1989-03, Vol.54 (13), p.1265-1267

1989

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Si-Si pair diffusion and correlation in AlxGa1-xAs and GaAs

Applied physics letters, 1985-01, Vol.47 (7), p.710-712

1985

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Index-guided AlxGa1-xAs-GaAs quantum well heterostructure lasers fabricated by vacancy-enhanced impurity-induced layer disordering from an internal (Si2)y(GaAs)1-y source

Applied physics letters, 1987-03, Vol.50 (10), p.609-611

1987

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Variable resonator (variable Q) photopumped phonon-assisted quantum well laser operation

Applied physics letters, 1990, Vol.56 (1), p.60-62

1990

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High-power disorder-defined coupled stripe AlyGa1-yAs-GaAs-InxGa1-xAs quantum well heterostructure lasers

Applied physics letters, 1989-07, Vol.55 (3), p.271-273

1989

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Coupled-stripe AlxGa1-xAs-GaAs quantum well lasers defined by vacancy-enhanced impurity-induced layer disordering from (Si2)y (GaAs)1-y barriers

Applied physics letters, 1987-03, Vol.50 (12), p.757-759

1987

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Buried heterostructure AlxGa1-xAs-GaAs quantum well lasers by Ge diffusion from the vapor

Applied physics letters, 1988-03, Vol.52 (10), p.825-827

1988

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Si-implanted and disordered stripe-geometry AlxGa1-xAs-GaAs quantum well lasers

Applied physics letters, 1985, Vol.47 (9), p.903-905

1985

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Disorder-defined buried-heterostructure Al x Ga1− x As-GaAs quantum well lasers by diffusion of silicon and oxygen from Al-reduced SiO2

Applied physics letters, 1989-03, Vol.54 (13), p.1265-1267

1989

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Column III-column V sublattice interaction via Zn and Si impurity-induced layer disordering of 13C-doped AlxGa1-xAs-GaAs superlattices

Applied physics letters, 1990, Vol.56 (6), p.572-574

1990

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Layer disordering of n -type (Se) and p -type (C) Al x Ga1− x As-GaAs superlattices by S diffusion

Applied physics letters, 1990-04, Vol.56 (18), p.1720-1722

1990

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Stimulated emission and lasing in whispering-gallery modes of GaN microdisk cavities

Carbon diffusion in undoped, n-type, and p-type GaAs

Screening effects in (111)B AlGaAs-InGaAs single quantum well heterostructures

Low-threshold disorder-defined buried heterostructure strained-layer AlyGa1-yAs-GaAs-InxGa1-xAs quantum well lasers (λ∼910 nm)

Evidence of two-species nucleation of InAs islands on (100) and (111)B GaAs substrates

Stripe-geometry quantum well heterostructure AlxGa1-xAs-GaAs lasers defined by defect diffusion

Depth-dependent native-defect-induced layer disordering in AlxGa1-xAs-GaAs quantum well heterostructures

Measurement of the interwell carrier transport lifetime in multiquantum-well optical amplifiers by polarization-resolved four-wave mixing

Visible-wavelength surface-emitting devices with a 15-fold improvement in electrical-to-optical power conversion efficiency

Controlled III–V semiconductor cluster nucleation and epitaxial growth via electron-beam lithography

High-power gain-guided coupled-stripe quantum well laser array by hydrogenation

Carbon-doped AlxGa1-xAs-GaAs quantum well lasers

Four-wave mixing mediated by the capture of electrons and holes in semiconductor quantum-well laser amplifiers

Instability of partially disordered carbon-doped AlGaAs/GaAs superlattices

Disorder-defined buried-heterostructure AlxGa1-xAs-GaAs quantum well lasers by diffusion of silicon and oxygen from Al-reduced SiO2

Si-Si pair diffusion and correlation in AlxGa1-xAs and GaAs

Index-guided AlxGa1-xAs-GaAs quantum well heterostructure lasers fabricated by vacancy-enhanced impurity-induced layer disordering from an internal (Si2)y(GaAs)1-y source

Variable resonator (variable Q) photopumped phonon-assisted quantum well laser operation

High-power disorder-defined coupled stripe AlyGa1-yAs-GaAs-InxGa1-xAs quantum well heterostructure lasers

Coupled-stripe AlxGa1-xAs-GaAs quantum well lasers defined by vacancy-enhanced impurity-induced layer disordering from (Si2)y (GaAs)1-y barriers

Buried heterostructure AlxGa1-xAs-GaAs quantum well lasers by Ge diffusion from the vapor

Si-implanted and disordered stripe-geometry AlxGa1-xAs-GaAs quantum well lasers

Disorder-defined buried-heterostructure Al x Ga1− x As-GaAs quantum well lasers by diffusion of silicon and oxygen from Al-reduced SiO2

Column III-column V sublattice interaction via Zn and Si impurity-induced layer disordering of 13C-doped AlxGa1-xAs-GaAs superlattices

Layer disordering of n -type (Se) and p -type (C) Al x Ga1− x As-GaAs superlattices by S diffusion

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