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Relaxation and H coverage of ammonium fluoride treated Si(111)

Applied physics letters, 1994-10, Vol.65 (18), p.2344-2346

1994

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Field-ion microscopy of liquid-metal gallium

Applied physics letters, 1979-01, Vol.34 (1), p.11-13

1979

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Optical emission from Ga ionization at a field emitter

Applied physics letters, 1980-06, Vol.36 (12), p.957-959

1980

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Photoluminescence in Si1−x−yGexCy alloys

Applied physics letters, 1997-05, Vol.70 (18), p.2353-2355

1997

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Multimillimeter-sized cubic boron arsenide grown by chemical vapor transport via a tellurium tetraiodide transport agent

Applied physics letters, 2018-06, Vol.112 (26)

2018

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Impurity-derived p-type conductivity in cubic boron arsenide

Applied physics letters, 2018-12, Vol.113 (25)

2018

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A flux growth technique for high quality cubic boron arsenide bulk single crystals

Applied physics letters, 2023-11, Vol.123 (20)

2023

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Hall effect mobility of epitaxial graphene grown on silicon carbide

Applied physics letters, 2009-09, Vol.95 (12), p.122102-122102-3

2009

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Gas-pressure chemical vapor transport growth of millimeter-sized c-BAs single crystals with moderate thermal conductivity

Applied physics letters, 2018-06, Vol.112 (24)

2018

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Morphology characterization of argon-mediated epitaxial graphene on C-face SiC

Applied physics letters, 2010-05, Vol.96 (22)

2010

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Lowered dislocation densities in uniform GaN layers grown on step-free (0001) 4H-SiC mesa surfaces

Applied physics letters, 2005-01, Vol.86 (2), p.021902-021902-3

2005

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Influence of AlN nucleation layer temperature on GaN electronic properties grown on SiC

Applied physics letters, 2002-06, Vol.80 (23), p.4372-4374

2002

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Very-long wave ternary antimonide superlattice photodiode with 21 μm cutoff

Applied physics letters, 2003-06, Vol.82 (25), p.4411-4413

2003

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Enhanced GaN decomposition in H2 near atmospheric pressures

Applied physics letters, 1998-10, Vol.73 (14), p.2018-2020

1998

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Microstructure of heteroepitaxial GaN grown on mesa-patterned 4H-SiC substrates

Applied physics letters, 2004-06, Vol.84 (25), p.5216-5218

2004

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Antimonide-based diodes for terahertz mixers

Applied physics letters, 2008-06, Vol.92 (24), p.243502-243502-3

2008

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Morphology characterization of argon-mediated epitaxial grapheneon C-face SiC

Applied physics letters, 2010-06, Vol.96 (22), p.222103-222103-3

2010

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Improved GaN materials and devices through confined epitaxy

Applied physics letters, 2007-04, Vol.90 (16), p.162101-162101-3

2007

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Nucleation layer microstructure, grain size, and electrical properties in GaN grown on a -plane sapphire

Applied physics letters, 1999-08, Vol.75 (5), p.686-688

1999

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Stoichiometry-induced roughness on antimonide growth surfaces

Applied physics letters, 2001-04, Vol.78 (17), p.2440-2442

2001

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NbN/BN granular films: a sensitive, high-speed detector for pulsed far-infrared radiation

Applied physics letters, 1987-06, Vol.50 (23), p.1691-1693

1987

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Erratum: “Enhanced GaN decomposition in H2 near atmospheric pressures” [Appl. Phys. Lett. 73 , 2018 (1998)]

Applied physics letters, 1999-09, Vol.75 (11), p.1646-1646

1999

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Relaxation and H coverage of ammonium fluoride treated Si(111)

Field-ion microscopy of liquid-metal gallium

Optical emission from Ga ionization at a field emitter

Photoluminescence in Si1−x−yGexCy alloys

Multimillimeter-sized cubic boron arsenide grown by chemical vapor transport via a tellurium tetraiodide transport agent

Impurity-derived p-type conductivity in cubic boron arsenide

A flux growth technique for high quality cubic boron arsenide bulk single crystals

Hall effect mobility of epitaxial graphene grown on silicon carbide

Gas-pressure chemical vapor transport growth of millimeter-sized c-BAs single crystals with moderate thermal conductivity

Morphology characterization of argon-mediated epitaxial graphene on C-face SiC

Lowered dislocation densities in uniform GaN layers grown on step-free (0001) 4H-SiC mesa surfaces

Influence of AlN nucleation layer temperature on GaN electronic properties grown on SiC

Very-long wave ternary antimonide superlattice photodiode with 21 μm cutoff

Enhanced GaN decomposition in H2 near atmospheric pressures

Microstructure of heteroepitaxial GaN grown on mesa-patterned 4H-SiC substrates

Antimonide-based diodes for terahertz mixers

Morphology characterization of argon-mediated epitaxial grapheneon C-face SiC

Improved GaN materials and devices through confined epitaxy

Nucleation layer microstructure, grain size, and electrical properties in GaN grown on a -plane sapphire

Stoichiometry-induced roughness on antimonide growth surfaces

NbN/BN granular films: a sensitive, high-speed detector for pulsed far-infrared radiation

Erratum: “Enhanced GaN decomposition in H2 near atmospheric pressures” [Appl. Phys. Lett. 73 , 2018 (1998)]

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