UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 376

Sortiert nach

Oxidation of graphene in ozone under ultraviolet light

Applied physics letters, 2012-08, Vol.101 (7), p.73110

2012

Link zum Volltext

Verfügbarkeit prüfen

Direct and in vitro observation of growth hormone receptor molecules in A549 human lung epithelial cells by nanodiamond labeling

Applied physics letters, 2007-04, Vol.90 (16)

2007

Link zum Volltext

Verfügbarkeit prüfen

Neuromorphic computing devices based on the asymmetric temperature gradient

Applied physics letters, 2023-06, Vol.122 (26)

2023

Link zum Volltext

Verfügbarkeit prüfen

A route to strong p -doping of epitaxial graphene on SiC

Applied physics letters, 2010-11, Vol.97 (19), p.193304-193304-3

2010

Link zum Volltext

Verfügbarkeit prüfen

Effects of nitridation and annealing on interface properties of thermally oxidized SiO2/SiC metal–oxide–semiconductor system

Applied physics letters, 2000-06, Vol.76 (25), p.3744-3746

2000

Link zum Volltext

Verfügbarkeit prüfen

Photoluminescence properties of self-assembled InN dots embedded in GaN grown by metal organic vapor phase epitaxy

Applied physics letters, 2006-05, Vol.88 (19)

2006

Link zum Volltext

Verfügbarkeit prüfen

Microphotoluminescence spectra of hillocks in Al0.11Ga0.89N films

Applied physics letters, 2004-10, Vol.85 (15), p.3047-3049

2004

Link zum Volltext

Verfügbarkeit prüfen

High responsivity of GaN p - i - n photodiode by using low-temperature interlayer

Applied physics letters, 2007-10, Vol.91 (17), p.173502-173502-3

2007

Link zum Volltext

Verfügbarkeit prüfen

Impacts of ammonia background flows on structural and photoluminescence properties of InN dots grown on GaN by flow-rate modulation epitaxy

Applied physics letters, 2006-12, Vol.89 (26)

2006

Link zum Volltext

Verfügbarkeit prüfen

Stress influence on band-edge luminescence properties of 4H-AlN

Applied physics letters, 2009-09, Vol.95 (12)

2009

Link zum Volltext

Verfügbarkeit prüfen

Improved interface properties of p -type 6H–SiC/SiO2 system by NH3 pretreatment

Applied physics letters, 2000-01, Vol.76 (3), p.372-374

2000

Link zum Volltext

Verfügbarkeit prüfen

In situ fabrication of alumina nanotube array and photoluminescence

Applied physics letters, 2006-08, Vol.89 (7), p.073114-073114-3

2006

Link zum Volltext

Verfügbarkeit prüfen

Impact of the strained SiGe source/drain on hot carrier reliability for 45nm p-type metal-oxide-semiconductor field-effect transistors

Applied physics letters, 2008-03, Vol.92 (13)

2008

Link zum Volltext

Verfügbarkeit prüfen

Silver nanocrystal superlattices: Self-assembly and optical emission

Applied physics letters, 2006-04, Vol.88 (14), p.143111-143111-3

2006

Link zum Volltext

Verfügbarkeit prüfen

Origin of the high p -doping in F intercalated graphene on SiC

Applied physics letters, 2011-08, Vol.99 (5), p.053117-053117-3

2011

Link zum Volltext

Verfügbarkeit prüfen

Characterization of rapid thermally nitrided SiO2/Si interface by the conductance technique

Applied physics letters, 1990-11, Vol.57 (21), p.2217-2219

1990

Link zum Volltext

Verfügbarkeit prüfen

Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells

Applied physics letters, 2000-11, Vol.77 (19), p.2988-2990

2000

Link zum Volltext

Verfügbarkeit prüfen

Damping of surface acoustic vibration induced by electrons trapped on SnO2 nanocrystal surface

Applied physics letters, 2009-11, Vol.95 (21)

2009

Link zum Volltext

Verfügbarkeit prüfen

Improvement of punchthrough-induced gate-oxide breakdown in n-channel metal-oxide-semiconductor field-effect transistors using rapid thermal nitridation

Applied physics letters, 1992-07, Vol.61 (4), p.453-455

1992

Link zum Volltext

Verfügbarkeit prüfen

Impact of the strained SiGe source/drain on hot carrier reliability for 45 nm p -type metal-oxide-semiconductor field-effect transistors

Applied physics letters, 2008-04, Vol.92 (13), p.133504-133504-3

2008

Link zum Volltext

Verfügbarkeit prüfen

Alterable temperature-dependent wavelength shifts in (InP)2/(GaP)2 quantum wells

Applied physics letters, 1998-02, Vol.72 (5), p.528-530

1998

Link zum Volltext

Verfügbarkeit prüfen

Stress influence on band-edge luminescence properties of 4 H -AlN

Applied physics letters, 2009-09, Vol.95 (12), p.121902-121902-3

2009

Link zum Volltext

Verfügbarkeit prüfen

Damping of surface acoustic vibration induced by electrons trappedon SnO 2 nanocrystal surface

Applied physics letters, 2009-11, Vol.95 (21), p.211903-211903-3

2009

Link zum Volltext

Verfügbarkeit prüfen

Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells

Applied physics letters, 2002-04, Vol.80 (14), p.2571-2573

2002

Link zum Volltext

Verfügbarkeit prüfen

Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions

Applied physics letters, 2004-04, Vol.84 (14), p.2506-2508

2004

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 376

Suche als RSS-Feed

Aktive Filter

Zeitschrift / SerieApplied Physics Letters

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(376)
Mit Volltextzugriff
(376)

Publikationsform

Artikel
(376)

Sprache

Englisch
(338)
Japanisch
(119)

Erscheinungsjahr

n.n

Thema

Physics
(305)
Physical Sciences
(298)
Physics, Applied
(298)
Science & Technology
(298)
Physics And Astronomy
(86)
Materials Science
(29)
Applied Physics
(28)
Exact Sciences And Technology
(24)
Transmission Electron Microscopy
(16)
Thin Films
(15)
Substrates
(14)
Molecular Beam Epitaxy
(12)
Nanostructures
(12)
Classical And Quantum Mechanics, General Physics
(10)
Lasers
(10)
Semiconductor Materials
(10)
Crystal Growth
(9)
Layers
(9)
Condensed Matter Physics, Superconductivity And Superfluidity
(8)
Condensed Matter: Structure, Mechanical And Thermal Properties
(8)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

AIP Journals Complete
(376)
NUS Single-Journal Subscriptions
(376)

Zeitschrift / Serie

Appl. Phys. Lett
(1)
Appl. Phys. Lett.;
(1)

Menü

Weitere Dienste

Einstellungen

Oxidation of graphene in ozone under ultraviolet light

Direct and in vitro observation of growth hormone receptor molecules in A549 human lung epithelial cells by nanodiamond labeling

Neuromorphic computing devices based on the asymmetric temperature gradient

A route to strong p -doping of epitaxial graphene on SiC

Effects of nitridation and annealing on interface properties of thermally oxidized SiO2/SiC metal–oxide–semiconductor system

Photoluminescence properties of self-assembled InN dots embedded in GaN grown by metal organic vapor phase epitaxy

Microphotoluminescence spectra of hillocks in Al0.11Ga0.89N films

High responsivity of GaN p - i - n photodiode by using low-temperature interlayer

Impacts of ammonia background flows on structural and photoluminescence properties of InN dots grown on GaN by flow-rate modulation epitaxy

Stress influence on band-edge luminescence properties of 4H-AlN

Improved interface properties of p -type 6H–SiC/SiO2 system by NH3 pretreatment

In situ fabrication of alumina nanotube array and photoluminescence

Impact of the strained SiGe source/drain on hot carrier reliability for 45nm p-type metal-oxide-semiconductor field-effect transistors

Silver nanocrystal superlattices: Self-assembly and optical emission

Origin of the high p -doping in F intercalated graphene on SiC

Characterization of rapid thermally nitrided SiO2/Si interface by the conductance technique

Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells

Damping of surface acoustic vibration induced by electrons trapped on SnO2 nanocrystal surface

Improvement of punchthrough-induced gate-oxide breakdown in n-channel metal-oxide-semiconductor field-effect transistors using rapid thermal nitridation

Impact of the strained SiGe source/drain on hot carrier reliability for 45 nm p -type metal-oxide-semiconductor field-effect transistors

Alterable temperature-dependent wavelength shifts in (InP)2/(GaP)2 quantum wells

Stress influence on band-edge luminescence properties of 4 H -AlN

Damping of surface acoustic vibration induced by electrons trappedon SnO 2 nanocrystal surface

Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells

Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions

Aktive Filter

Suchergebnisse filtern