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Piezoelectric d36 in-plane shear-mode of lead-free BZT-BCT single crystals for torsion actuation

Applied physics letters, 2017-01, Vol.110 (5)

2017

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Study of void formation due to electromigration in flip-chip solder joints using Kelvin bump probes

Applied physics letters, 2006-07, Vol.89 (3), p.032103-032103-3

2006

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Effect of Al-trace dimension on Joule heating and current crowding in flip-chip solder joints under accelerated electromigration

Applied physics letters, 2006-04, Vol.88 (17)

2006

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Piezoelectric d 36 in-plane shear-mode of lead-free BZT-BCT single crystals for torsion actuation

Applied physics letters, 2017-01, Vol.110 (5)

2017

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Effect of void propagation on bump resistance due to electromigration in flip-chip solder joints using Kelvin structure

Applied physics letters, 2007-09, Vol.91 (13)

2007

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Effect of three-dimensional current and temperature distributions on void formation and propagation in flip-chip solder joints during electromigration

Applied physics letters, 2006-07, Vol.89 (2)

2006

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Effect of void propagation on bump resistance due to electromigrationin flip-chip solder joints using Kelvin structure

Applied physics letters, 2007-09, Vol.91 (13), p.132113-132113-3

2007

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Effect of Al-trace dimension on Joule heating and current crowdingin flip-chip solder joints under accelerated electromigration

Applied physics letters, 2006-04, Vol.88 (17), p.172108-172108-3

2006

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Effect of three-dimensional current and temperature distributionson void formation and propagation in flip-chip solder jointsduring electromigration

Applied physics letters, 2006-07, Vol.89 (2), p.022117-022117-3

2006

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High responsivity of amorphous indium gallium zinc oxide phototransistor with Ta2O5 gate dielectric

Applied physics letters, 2012-12, Vol.101 (26)

2012

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Enhanced light emission from InAs quantum dots in single-defect photonic crystal microcavities at room temperature

Applied physics letters, 2005-08, Vol.87 (7), p.071111-071111-3

2005

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Temperature dependence of terahertz optical characteristics and carrier transport dynamics in p-type transparent conductive CuCr1−xMgxO2 semiconductor films

Applied physics letters, 2014-01, Vol.104 (1)

2014

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Observation and explanation of multistable nonvolatile memory in silicon FIT diodes

Applied physics letters, 1973-01, Vol.22 (4), p.167-169

1973

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Epitaxial ferromagnetic Fe3Si on GaAs(111)A with atomically smooth surface and interface

Applied physics letters, 2015-09, Vol.107 (12)

2015

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Tensile tests of ropes of very long aligned multiwall carbon nanotubes

Applied physics letters, 1999-05, Vol.74 (21), p.3152-3154

1999

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Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots

Applied physics letters, 2003-10, Vol.83 (14), p.2958-2960

2003

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ZnO nanowire field-effect transistor and oxygen sensing property

Applied physics letters, 2004-12, Vol.85 (24), p.5923-5925

2004

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Electroreflectance studies of InAs quantum dots with InxGa1−xAs capping layer grown by metalorganic chemical vapor deposition

Applied physics letters, 2005-03, Vol.86 (13)

2005

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Amorphous InGaZnO ultraviolet phototransistors with double-stack Ga2O3/SiO2 dielectric

Applied physics letters, 2013-06, Vol.102 (22)

2013

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Temperature stability of single-photon emission from InGaAs quantum dots in photonic crystal nanocavities

Applied physics letters, 2007-05, Vol.90 (21), p.211114-211114-3

2007

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Growth of straight nanotubes with a cobalt–nickel catalyst by chemical vapor deposition

Applied physics letters, 1999-02, Vol.74 (5), p.644-646

1999

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Sheath width effect on the determination of plasma frequency in the cutoff probe

Applied physics letters, 2012-06, Vol.100 (24)

2012

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Growth of carbon nanotubes on cobalt disilicide precipitates by chemical vapor deposition

Applied physics letters, 1998-06, Vol.72 (25), p.3297-3299

1998

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Composite diamond-like carbon and silicon carbide tips grown on oblique-cut Si(111) substrates

Applied physics letters, 2001-11, Vol.79 (22), p.3609-3611

2001

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Increasing the work function of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) by ultraviolet irradiation

Applied physics letters, 2007-08, Vol.91 (9), p.092127-092127-3

2007

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Piezoelectric d36 in-plane shear-mode of lead-free BZT-BCT single crystals for torsion actuation

Study of void formation due to electromigration in flip-chip solder joints using Kelvin bump probes

Effect of Al-trace dimension on Joule heating and current crowding in flip-chip solder joints under accelerated electromigration

Piezoelectric d 36 in-plane shear-mode of lead-free BZT-BCT single crystals for torsion actuation

Effect of void propagation on bump resistance due to electromigration in flip-chip solder joints using Kelvin structure

Effect of three-dimensional current and temperature distributions on void formation and propagation in flip-chip solder joints during electromigration

Effect of void propagation on bump resistance due to electromigrationin flip-chip solder joints using Kelvin structure

Effect of Al-trace dimension on Joule heating and current crowdingin flip-chip solder joints under accelerated electromigration

Effect of three-dimensional current and temperature distributionson void formation and propagation in flip-chip solder jointsduring electromigration

High responsivity of amorphous indium gallium zinc oxide phototransistor with Ta2O5 gate dielectric

Enhanced light emission from InAs quantum dots in single-defect photonic crystal microcavities at room temperature

Temperature dependence of terahertz optical characteristics and carrier transport dynamics in p-type transparent conductive CuCr1−xMgxO2 semiconductor films

Observation and explanation of multistable nonvolatile memory in silicon FIT diodes

Epitaxial ferromagnetic Fe3Si on GaAs(111)A with atomically smooth surface and interface

Tensile tests of ropes of very long aligned multiwall carbon nanotubes

Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots

ZnO nanowire field-effect transistor and oxygen sensing property

Electroreflectance studies of InAs quantum dots with InxGa1−xAs capping layer grown by metalorganic chemical vapor deposition

Amorphous InGaZnO ultraviolet phototransistors with double-stack Ga2O3/SiO2 dielectric

Temperature stability of single-photon emission from InGaAs quantum dots in photonic crystal nanocavities

Growth of straight nanotubes with a cobalt–nickel catalyst by chemical vapor deposition

Sheath width effect on the determination of plasma frequency in the cutoff probe

Growth of carbon nanotubes on cobalt disilicide precipitates by chemical vapor deposition

Composite diamond-like carbon and silicon carbide tips grown on oblique-cut Si(111) substrates

Increasing the work function of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) by ultraviolet irradiation

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