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Determining Curie temperatures in dilute ferromagnetic semiconductors: High Curie temperature (Ga,Mn)As

Applied physics letters, 2014-03, Vol.104 (13)

2014

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Uniaxial anisotropy of two-magnon scattering in an ultrathin epitaxial Fe layer on GaAs

Applied physics letters, 2013-02, Vol.102 (6)

2013

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Achieving high Curie temperature in (Ga,Mn)As

Applied physics letters, 2008-09, Vol.93 (13), p.132103-132103-3

2008

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Probing the manipulation of antiferromagnetic order in CuMnAs films using neutron diffraction

Applied physics letters, 2022-08, Vol.121 (5)

2022

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High-Curie-temperature Ga1−xMnxAs obtained by resistance-monitored annealing

Applied physics letters, 2002-12, Vol.81 (26), p.4991-4993

2002

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Non-volatile voltage control of magnetization and magnetic domain walls in magnetostrictive epitaxial thin films

Applied physics letters, 2012-08, Vol.101 (7), p.72402

2012

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Intrinsic magnetic refrigeration of a single electron transistor

Applied physics letters, 2016-02, Vol.108 (5), p.53103

2016

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Voltage controlled modification of flux closure domains in planar magnetic structures for microwave applications

Applied physics letters, 2014-08, Vol.105 (6)

2014

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Temperature dependence of spin-orbit torque effective fields in the diluted magnetic semiconductor (Ga,Mn)As

Applied physics letters, 2014-07, Vol.105 (1)

2014

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Identification of the interstitial Mn site in ferromagnetic (Ga,Mn)As

Applied physics letters, 2015-01, Vol.106 (1)

2015

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Electrical control of magnetic reversal processes in magnetostrictive structures

Applied physics letters, 2013-01, Vol.102 (3)

2013

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Hall effect and hole densities in Ga1−xMnxAs

Applied physics letters, 2002-10, Vol.81 (16), p.3010-3012

2002

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Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers

Applied physics letters, 2008-03, Vol.92 (12), p.121902-121902-3

2008

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Dc-transport properties of ferromagnetic (Ga,Mn)As semiconductors

Applied physics letters, 2003-07, Vol.83 (2), p.320-322

2003

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Control of coercivities in (Ga,Mn)As thin films by small concentrations of MnAs nanoclusters

Applied physics letters, 2006-01, Vol.88 (2)

2006

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A micrometer-size movable light emitting area in a resonant tunneling light emitting diode

Applied physics letters, 2013-12, Vol.103 (24)

2013

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Anisotropic current-controlled magnetization reversal in the ferromagnetic semiconductor (Ga,Mn)As

Applied physics letters, 2013-07, Vol.103 (2), p.22401

2013

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Spin gating electrical current

Applied physics letters, 2012-09, Vol.101 (12)

2012

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Electrical excitation and detection of magnetic dynamics with impedance matching

Applied physics letters, 2012-10, Vol.101 (18)

2012

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Crystalline anisotropic magnetoresistance in quaternary ferromagnetic semiconductor (Ga,Mn)(As,Sb)

Applied physics letters, 2013-02, Vol.102 (5)

2013

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Piezoelectric strain induced variation of the magnetic anisotropy in a high Curie temperature (Ga,Mn)As sample

Applied physics letters, 2012-08, Vol.101 (8), p.82406

2012

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Intrinsic and extrinsic contributions to the lattice parameter of GaMnAs

Applied physics letters, 2005-02, Vol.86 (7), p.071902-071902-3

2005

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Magnetic and structural properties of (Ga,Mn)As/(Al,Ga,Mn)As bilayer films

Applied physics letters, 2013-03, Vol.102 (11)

2013

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Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device

Applied physics letters, 2010-12, Vol.97 (26)

2010

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Non-volatile ferroelectric gating of magnetotransport anisotropy in (Ga,Mn)(As,P)

Applied physics letters, 2012-06, Vol.100 (26)

2012

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Determining Curie temperatures in dilute ferromagnetic semiconductors: High Curie temperature (Ga,Mn)As

Uniaxial anisotropy of two-magnon scattering in an ultrathin epitaxial Fe layer on GaAs

Achieving high Curie temperature in (Ga,Mn)As

Probing the manipulation of antiferromagnetic order in CuMnAs films using neutron diffraction

High-Curie-temperature Ga1−xMnxAs obtained by resistance-monitored annealing

Non-volatile voltage control of magnetization and magnetic domain walls in magnetostrictive epitaxial thin films

Intrinsic magnetic refrigeration of a single electron transistor

Voltage controlled modification of flux closure domains in planar magnetic structures for microwave applications

Temperature dependence of spin-orbit torque effective fields in the diluted magnetic semiconductor (Ga,Mn)As

Identification of the interstitial Mn site in ferromagnetic (Ga,Mn)As

Electrical control of magnetic reversal processes in magnetostrictive structures

Hall effect and hole densities in Ga1−xMnxAs

Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers

Dc-transport properties of ferromagnetic (Ga,Mn)As semiconductors

Control of coercivities in (Ga,Mn)As thin films by small concentrations of MnAs nanoclusters

A micrometer-size movable light emitting area in a resonant tunneling light emitting diode

Anisotropic current-controlled magnetization reversal in the ferromagnetic semiconductor (Ga,Mn)As

Spin gating electrical current

Electrical excitation and detection of magnetic dynamics with impedance matching

Crystalline anisotropic magnetoresistance in quaternary ferromagnetic semiconductor (Ga,Mn)(As,Sb)

Piezoelectric strain induced variation of the magnetic anisotropy in a high Curie temperature (Ga,Mn)As sample

Intrinsic and extrinsic contributions to the lattice parameter of GaMnAs

Magnetic and structural properties of (Ga,Mn)As/(Al,Ga,Mn)As bilayer films

Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device

Non-volatile ferroelectric gating of magnetotransport anisotropy in (Ga,Mn)(As,P)

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